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Sebastian Gutsch
Sebastian Gutsch
University of Freiburg, IMTEK/Nanotechnology
Verified email at imtek.de - Homepage
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Cited by
Cited by
Year
Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices
AM Hartel, D Hiller, S Gutsch, P Löper, S Estradé, F Peiró, B Garrido, ...
Thin Solid Films 520 (1), 121-125, 2011
1402011
Sphericity and roundness computation for particles using the extreme vertices model
I Cruz-Matías, D Ayala, D Hiller, S Gutsch, M Zacharias, S Estradé, F Peiró
Journal of computational science 30, 28-40, 2019
1072019
Fundamental temperature-dependent properties of the Si nanocrystal band gap
AM Hartel, S Gutsch, D Hiller, M Zacharias
Physical Review B 85 (16), 165306, 2012
902012
Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography
H Gnaser, S Gutsch, M Wahl, R Schiller, M Kopnarski, D Hiller, ...
Journal of Applied Physics 115 (3), 2014
772014
Location and Electronic Nature of Phosphorus in the Si Nanocrystal − SiO2 System
D König, S Gutsch, H Gnaser, M Wahl, M Kopnarski, J Göttlicher, ...
Scientific reports 5 (1), 9702, 2015
762015
Charge transport in Si nanocrystal/SiO2 superlattices
S Gutsch, J Laube, AM Hartel, D Hiller, N Zakharov, P Werner, ...
Journal of Applied Physics 113 (13), 2013
752013
Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, SA Dyakov, L López-Conesa, ...
Journal of Applied Physics 115 (20), 2014
582014
Intrinsic nonradiative recombination in ensembles of silicon nanocrystals
AM Hartel, S Gutsch, D Hiller, M Zacharias
Physical Review B 87 (3), 035428, 2013
552013
Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing
J Laube, D Nübling, H Beh, S Gutsch, D Hiller, M Zacharias
Thin Solid Films 603, 377-381, 2016
462016
Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO2 matrix
S Gutsch, AM Hartel, D Hiller, N Zakharov, P Werner, M Zacharias
Applied Physics Letters 100 (23), 2012
462012
Modulation doping of silicon using aluminium-induced acceptor states in silicon dioxide
D König, D Hiller, S Gutsch, M Zacharias, S Smith
Scientific reports 7 (1), 46703, 2017
452017
Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals
J Valenta, M Greben, S Gutsch, D Hiller, M Zacharias
Applied Physics Letters 105 (24), 2014
452014
Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift
A Zelenina, SA Dyakov, D Hiller, S Gutsch, V Trouillet, M Bruns, ...
Journal of Applied Physics 114 (18), 2013
452013
Defect-induced luminescence quenching vs. charge carrier generation of phosphorus incorporated in silicon nanocrystals as function of size
D Hiller, J López-Vidrier, S Gutsch, M Zacharias, K Nomoto, D König
Scientific Reports 7 (1), 863, 2017
442017
Energy Offset between silicon quantum structures: Interface Impact of embedding dielectrics as doping alternative
D König, D Hiller, S Gutsch, M Zacharias
Advanced Materials Interfaces 1 (9), 1400359, 2014
422014
Determining the crystalline degree of silicon nanoclusters/SiO2 multilayers by Raman scattering
S Hernández, J López-Vidrier, L López-Conesa, D Hiller, S Gutsch, ...
Journal of Applied Physics 115 (20), 2014
422014
Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2
S Gutsch, J Laube, D Hiller, W Bock, M Wahl, M Kopnarski, H Gnaser, ...
Applied Physics Letters 106 (11), 2015
402015
Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices
J López-Vidrier, Y Berencén, S Hernández, O Blázquez, S Gutsch, ...
Journal of Applied Physics 114 (16), 2013
392013
Two-dimensional percolation threshold in confined Si nanoparticle networks
J Laube, S Gutsch, D Wang, C Kübel, M Zacharias, D Hiller
Applied Physics Letters 108 (4), 2016
372016
Determination of absorption cross-section of Si nanocrystals by two independent methods based on either absorption or luminescence
J Valenta, M Greben, Z Remeš, S Gutsch, D Hiller, M Zacharias
Applied Physics Letters 108 (2), 2016
372016
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Articles 1–20