Joan Redwing
Joan Redwing
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Cited by
Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
In situ epitaxial MgB2 thin films for superconducting electronics
X Zeng, AV Pogrebnyakov, A Kotcharov, JE Jones, XX Xi, EM Lysczek, ...
Nature materials 1 (1), 35-38, 2002
Piezoelectric charge densities in AlGaN/GaN HFETs
PM Asbeck, ET Yu, SS Lau, GJ Sullivan, J Van Hove, J Redwing
Electronics letters 33 (14), 1230-1231, 1997
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
Bottom-up assembly of large-area nanowire resonator arrays
M Li, RB Bhiladvala, TJ Morrow, JA Sioss, KK Lew, JM Redwing, ...
Nature Nanotechnology 3 (2), 88-92, 2008
GaN-based devices using (Ga, AL, In) N base layers
RP Vaudo, JM Redwing, MA Tischler, DW Brown
US Patent 6,156,581, 2000
High-field superconductivity in alloyed thin films
V Braccini, A Gurevich, JE Giencke, MC Jewell, CB Eom, DC Larbalestier, ...
Physical Review B 71 (1), 012504, 2005
Crystallographic wet chemical etching of GaN
DA Stocker, EF Schubert, JM Redwing
Applied Physics Letters 73 (18), 2654-2656, 1998
High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
J Redwing, MA Tischler
US Patent 5,874,747, 1999
Benchmarking monolayer MoS2 and WS2 field-effect transistors
A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das
Nature communications 12 (1), 693, 2021
Silicon nanowire array photoelectrochemical cells
AP Goodey, SM Eichfeld, KK Lew, JM Redwing, TE Mallouk
Journal of the American Chemical Society 129 (41), 12344-12345, 2007
III-V nitride substrate boule and method of making and using the same
RP Vaudo, JS Flynn, GR Brandes, JM Redwing, MA Tischler
US Patent 6,596,079, 2003
Optical properties of Si-doped GaN
EF Schubert, ID Goepfert, W Grieshaber, JM Redwing
Applied Physics Letters 71 (7), 921-923, 1997
Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates
KK Lew, JM Redwing
Journal of Crystal Growth 254 (1-2), 14-22, 2003
Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire
X Zhang, TH Choudhury, M Chubarov, Y Xiang, B Jariwala, F Zhang, ...
Nano letters 18 (2), 1049-1056, 2018
A roadmap for electronic grade 2D materials
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
AIGaN/GaN HEMTs grown on SIC substrates
SC Binari, JM Redwing, G Keiner, W Kruppa
Electronics Letters 33 (3), 242-243, 1997
Optical properties of rectangular cross-sectional ZnS nanowires
Q Xiong, G Chen, JD Acord, X Liu, JJ Zengel, HR Gutierrez, JM Redwing, ...
Nano Letters 4 (9), 1663-1668, 2004
High voltage (450 V) GaN schottky rectifiers
ZZ Bandić, PM Bridger, EC Piquette, TC McGill, RP Vaudo, VM Phanse, ...
Applied physics letters 74 (9), 1266-1268, 1999
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
LS Yu, QZ Liu, QJ Xing, DJ Qiao, SS Lau, J Redwing
Journal of applied physics 84 (4), 2099-2104, 1998
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