| 30GHz direct modulation bandwidth indetuned loaded InGaAsP DBR lasers at1. 55 μm wavelength O Kjebon, R Schatz, S Lourdudoss, S Nilsson, B Stålnacke, L Bäckbom Electronics Letters 33, 488-489, 1997 | 172 | 1997 |
| Heteroepitaxy and selective area heteroepitaxy for silicon photonics S Lourdudoss Current Opinion in Solid State and Materials Science 16 (2), 91-99, 2012 | 100 | 2012 |
| Hydride vapor phase epitaxy revisited S Lourdudoss, O Kjebon IEEE Journal of Selected Topics in Quantum Electronics 3 (3), 749-767, 1997 | 98 | 1997 |
| Monolithically integrated InP-based photonic chip development for O-CDMA systems C Ji, RG Broeke, Y Du, J Cao, N Chubun, P Bjeletich, F Olsson, ... IEEE Journal of Selected Topics in Quantum Electronics 11 (1), 66-77, 2005 | 82 | 2005 |
| Free‐space communications enabled by quantum cascade lasers X Pang, O Ozolins, L Zhang, R Schatz, A Udalcovs, X Yu, G Jacobsen, ... physica status solidi (a) 218 (3), 2000407, 2021 | 77 | 2021 |
| Gigabit free-space multi-level signal transmission with a mid-infrared quantum cascade laser operating at room temperature X Pang, O Ozolins, R Schatz, J Storck, A Udalcovs, JR Navarro, A Kakkar, ... Optics letters 42 (18), 3646-3649, 2017 | 76 | 2017 |
| Quantized conductance in a heterostructurally defined quantum wire P Ramvall, N Carlsson, I Maximov, P Omling, L Samuelson, W Seifert, ... Applied physics letters 71 (7), 918-920, 1997 | 75 | 1997 |
| III–Vs on Si for photonic applications—A monolithic approach Z Wang, C Junesand, W Metaferia, C Hu, L Wosinski, S Lourdudoss Materials Science and Engineering: B 177 (17), 1551-1557, 2012 | 71 | 2012 |
| Bridging the terahertz gap: Photonics-assisted free-space communications from the submillimeter-wave to the mid-infrared X Pang, O Ozolins, S Jia, L Zhang, R Schatz, A Udalcovs, V Bobrovs, ... Journal of Lightwave Technology 40 (10), 3149-3162, 2022 | 65 | 2022 |
| Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs O Kjebon, R Schatz, S Lourdudoss, S Nilsson, B Stalnacke High-Speed Semiconductor Laser Sources 2684, 138-152, 1996 | 60 | 1996 |
| Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer F Olsson, M Xie, S Lourdudoss, I Prieto, PA Postigo Journal of Applied Physics 104 (9), 2008 | 59 | 2008 |
| Active photonic device C Junesand, S Lourdudoss US Patent 8,290,014, 2012 | 58 | 2012 |
| Monolithic InP 100-Channel 10-GHz Device for Optical Arbitrary Waveform Generation FM Soares, NK Fontaine, RP Scott, JH Baek, X Zhou, T Su, S Cheung, ... IEEE Photonics Journal 3 (6), 975-985, 2011 | 56 | 2011 |
| Electron and hole capture cross-sections of Fe acceptors in GaN: Fe epitaxially grown on sapphire T Aggerstam, A Pinos, S Marcinkevičius, M Linnarsson, S Lourdudoss Journal of electronic materials 36, 1621-1624, 2007 | 52 | 2007 |
| Anomalous -dependent spin splitting in wurtzite heterostructures I Lo, MH Gau, JK Tsai, YL Chen, ZJ Chang, WT Wang, JC Chiang, ... Physical Review B—Condensed Matter and Materials Physics 75 (24), 245307, 2007 | 52 | 2007 |
| An investigation on hydride VPE growth and properties of semi-insulating InP: Fe S Lourdudoss, B Hammarlund, O Kjebon Journal of electronic materials 19, 981-987, 1990 | 48 | 1990 |
| Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire T Aggerstam, S Lourdudoss, HH Radamson, M Sjödin, P Lorenzini, ... Thin Solid Films 515 (2), 705-707, 2006 | 45 | 2006 |
| Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers K Streubel, J Wallin, G Landgren, U Öhlander, S Lourdudoss, O Kjebon Journal of crystal growth 143 (1-2), 7-14, 1994 | 42 | 1994 |
| Simple epitaxial lateral overgrowth process as a strategy for photonic integration on silicon H Kataria, W Metaferia, C Junesand, C Zhang, N Julian, JE Bowers, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 380-386, 2013 | 41 | 2013 |
| Large area photonic crystal quantum cascade laser with 5 W surface-emitting power Z Wang, Y Liang, B Meng, YT Sun, G Omanakuttan, E Gini, M Beck, ... Optics Express 27 (16), 22708-22716, 2019 | 40 | 2019 |
