| Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors H Carrillo-Nuñez, N Dimitrova, A Asenov, V Georgiev IEEE Electron Device Letters 40 (9), 1366-1369, 2019 | 102 | 2019 |
| Phonon-limited performance of single-layer, single-gate black phosphorus n - and p -type field-effect transistors A Szabo, R Rhyner, H Carrillo-Nunez, M Luisier 2015 IEEE International Electron Devices Meeting (IEDM), 12.1.1 - 12.1.4, 2015 | 36 | 2015 |
| Nano‑electronic Simulation Software (NESS): a flexible nano‑device simulation platform S Berrada, H Carrillo‑Nunez, J Lee, C Medina‑Bailon, T Dutta, O Badami, ... Journal of Computational Electronics, 2020 | 35 | 2020 |
| Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices H Carrillo-Nuñez, A Ziegler, M Luisier, A Schenk Journal of Applied Physics 117 (23), 234501, 2015 | 32 | 2015 |
| Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk H Carrillo-Nuñez, M Luisier, A Schenk Solid-State Electronics 113, 61-67, 2015 | 27 | 2015 |
| Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ... Materials 12 (1), 124, 2019 | 24 | 2019 |
| NESS: new flexible Nano-Electronic Simulation Software S Berrada, H Carrillo-Nunez, T Dutta, M Duan, F Adamu-Lema, J Lee, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 21 | 2018 |
| Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ... Applied Sciences 9 (9), 1895, 2019 | 20 | 2019 |
| Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism C Medina Bailon, T Sadi, M Nedjalkov, H Carrillo-Nunez, J Lee, O Badami, ... IEEE Electron Device Letters, 2019 | 17 | 2019 |
| Random dopant-induced variability in Si-InAs nanowire tunnel FETs: A quantum transport simulation study H Carrillo-Nuñez, J Lee, S Berrada, C Medina-Bailón, F Adamu-Lema, ... IEEE Electron Device Letters 39 (9), 1473-1476, 2018 | 14 | 2018 |
| Understanding electromigration in Cu-CNT composite interconnects: A multiscale electrothermal simulation study J Lee, S Berrada, F Adamu-Lema, N Nagy, VP Georgiev, T Sadi, J Liang, ... IEEE Transactions on Electron Devices 65 (9), 3884-3892, 2018 | 14 | 2018 |
| Influence of electron–phonon interactions in single dopant nanowire transistors H Carrillo-Nuñez, M Bescond, N Cavassilas, E Dib, M Lannoo Journal of Applied Physics 116, 164505, 2014 | 14 | 2014 |
| Impact of Randomly Distributed Dopants on -Gate Junctionless Silicon Nanowire Transistors H Carrillo-Nunez, MM Mirza, DJ Paul, DA MacLaren, A Asenov, ... IEEE Transactions on Electron Devices 65 (5), 1692-1698, 2018 | 13 | 2018 |
| Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach T Dutta, C Medina-Bailon, H Carrillo-Nunez, O Badami, V Georgiev, ... 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 2019 | 10 | 2019 |
| Design of High-Performance InAs-Si Heterojunction 2D-2D Tunnel FETs With Lateral and Vertical Tunneling Paths H Carrillo-Nuñez, M Luisier, A Schenk IEEE Transactions on Electron Devices 63 (12), 5041 - 5047, 2016 | 10 | 2016 |
| Localization of electronic states in finite ladder models: Participation ratio and localization length as measures of the wave-function extension H Carrillo-Nuñez, PA Schulz Physical Review B—Condensed Matter and Materials Physics 78 (23), 235404, 2008 | 10 | 2008 |
| Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation C Medina-Bailon, H Carrillo-Nunez, J Lee, C Sampedro, JL Padilla, ... Micromachines 11 (2), 204, 2020 | 9 | 2020 |
| The impact of dopant diffusion on random dopant fluctuation in Si nanowire FETs: A quantum transport study J Lee, S Berrada, H Carrillo-Nunez, C Medina-Bailon, F Adamu-Lema, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 9 | 2018 |
| Size and temperature dependence of the electron-phonon scattering by donors in nanowire transistors M Bescond, H Carrillo-Nuñez, S Berrada, N Cavassilas, M Lannoo Solid-State Electronics 112, 1-7, 2016 | 9 | 2016 |
| Surface Roughness Scattering in NEGF using self-energy formulation O Badami, S Berrada, H Carrillo-Nunez, C Medina-Bailon, V Georgiev, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 8 | 2019 |
Vihar P. GeorgievProfessor of Nanoelectronics at University of GlasgowVerified email at glasgow.ac.uk
