| High-performance junctionless MOSFETs for ultralow-power analog/RF applications D Ghosh, MS Parihar, GA Armstrong, A Kranti IEEE Electron Device Letters 33 (10), 1477-1479, 2012 | 117 | 2012 |
| Ultra low power junctionless MOSFETs for subthreshold logic applications MS Parihar, D Ghosh, A Kranti IEEE Transactions on Electron Devices 60 (5), 1540-1546, 2013 | 102 | 2013 |
| Enhanced sensitivity of double gate junctionless transistor architecture for biosensing applications MS Parihar, A Kranti Nanotechnology 26 (14), 145201, 2015 | 77 | 2015 |
| A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ... Solid-State Electronics 143, 10-19, 2018 | 59 | 2018 |
| The concept of electrostatic doping and related devices S Cristoloveanu, KH Lee, H Park, MS Parihar Solid-State Electronics 155, 32-43, 2019 | 55 | 2019 |
| Revisiting the doping requirement for low power junctionless MOSFETs MS Parihar, A Kranti Semiconductor Science and Technology 29 (7), 075006, 2014 | 51 | 2014 |
| Single transistor latch phenomenon in junctionless transistors M Singh Parihar, D Ghosh, A Kranti Journal of Applied Physics 113 (18), 2013 | 46 | 2013 |
| Bipolar effects in unipolar junctionless transistors MS Parihar, D Ghosh, GA Armstrong, R Yu, P Razavi, A Kranti Applied Physics Letters 101 (9), 2012 | 45 | 2012 |
| -FET as Capacitor-Less eDRAM Cell For High-Density Integration C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ... IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017 | 35 | 2017 |
| Bipolar snapback in junctionless transistors for capacitorless dynamic random access memory M Singh Parihar, D Ghosh, G Alastair Armstrong, A Kranti Applied Physics Letters 101 (26), 2012 | 33 | 2012 |
| A comprehensive model on field-effect pnpn devices (Z2-FET) Y Taur, J Lacord, MS Parihar, J Wan, S Martinie, K Lee, M Bawedin, ... Solid-State Electronics 134, 1-8, 2017 | 23 | 2017 |
| Insight into carrier lifetime impact on band-modulation devices MS Parihar, KH Lee, HJ Park, J Lacord, S Martinie, JC Barbé, Y Xu, ... Solid-State Electronics 143, 41-48, 2018 | 18 | 2018 |
| Low-power Z2-FET capacitorless 1T-DRAM MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 18 | 2017 |
| Volume accumulated double gate junctionless MOSFETs for low power logic technology applications MS Parihar, A Kranti Fifteenth international symposium on quality electronic design, 335-340, 2014 | 17 | 2014 |
| Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory H El Dirani, M Bawedin, K Lee, M Parihar, X Mescot, P Fonteneau, P Galy, ... 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2016 | 16 | 2016 |
| Back bias induced dynamic and steep subthreshold swing in junctionless transistors MS Parihar, A Kranti Applied Physics Letters 105 (3), 2014 | 16 | 2014 |
| Ultra-low power 1T-DRAM in FDSOI technology H El Dirani, KH Lee, MS Parihar, J Lacord, S Martinie, JC Barbe, X Mescot, ... Microelectronic Engineering 178, 245-249, 2017 | 14 | 2017 |
| MSDRAM, A2RAM and Z2-FET performance benchmark for 1T-DRAM applications J Lacord, MS Parihar, C Navarro, FT Wakam, M Bawedin, S Cristoloveanu, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 13 | 2018 |
| Back-gate effects and mobility characterization in junctionless transistor MS Parihar, F Liu, C Navarro, S Barraud, M Bawedin, I Ionica, A Kranti, ... Solid-State Electronics 125, 154-160, 2016 | 10 | 2016 |
| Evaluation of thin-oxide Z2-FET DRAM cell S Navarro, KH Lee, C Marquez, C Navarro, M Parihar, H Park, P Galy, ... 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 9 | 2018 |
