| A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ... Solid-State Electronics 143, 10-19, 2018 | 59 | 2018 |
| Extended Analysis of the -FET: Operation as Capacitorless eDRAM C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ... IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017 | 46 | 2017 |
| -FET as Capacitor-Less eDRAM Cell For High-Density Integration C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ... IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017 | 35 | 2017 |
| Experimental Demonstration of Operational Z2-FET Memory Matrix S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ... IEEE Electron Device Letters 39 (5), 660-663, 2018 | 32 | 2018 |
| Properties and mechanisms of Z2-FET at variable temperature H El Dirani, Y Solaro, P Fonteneau, P Ferrari, S Cristoloveanu Solid-State Electronics 115, 201-206, 2016 | 29 | 2016 |
| Sharp-switching Z2-FET device in 14 nm FDSOI technology H El Dirani, Y Solaro, P Fonteneau, P Ferrari, S Cristoloveanu 2015 45th European Solid State Device Research Conference (ESSDERC), 250-253, 2015 | 23 | 2015 |
| Sharp-switching band-modulation back-gated devices in advanced FDSOI technology H El Dirani, P Fonteneau, Y Solaro, CA Legrand, D Marin-Cudraz, ... Solid-State Electronics 128, 180-186, 2017 | 22 | 2017 |
| Insight into carrier lifetime impact on band-modulation devices MS Parihar, KH Lee, HJ Park, J Lacord, S Martinie, JC Barbé, Y Xu, ... Solid-State Electronics 143, 41-48, 2018 | 18 | 2018 |
| Low-power Z2-FET capacitorless 1T-DRAM MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 18 | 2017 |
| Ultra-low power 1T-DRAM in FDSOI technology H El Dirani, KH Lee, MS Parihar, J Lacord, S Martinie, JC Barbe, X Mescot, ... Microelectronic Engineering 178, 245-249, 2017 | 16 | 2017 |
| Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory H El Dirani, M Bawedin, K Lee, M Parihar, X Mescot, P Fonteneau, P Galy, ... 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2016 | 16 | 2016 |
| Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes H El Dirani, P Fonteneau, Y Solaro, P Ferrari, S Cristoloveanu 2016 46th European Solid-State Device Research Conference (ESSDERC), 210-213, 2016 | 15 | 2016 |
| A sharp-switching gateless device (Z3-FET) in advanced FDSOI technology H El Dirani, Y Solaro, P Fonteneau, CA Legrand, D Marin-Cudraz, ... 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 14 | 2016 |
| Sharp logic switch based on band modulation KH Lee, H El Dirani, P Fonteneau, M Bawedin, S Cristoloveanu IEEE Electron Device Letters 40 (11), 1852-1855, 2019 | 12 | 2019 |
| Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications KH Lee, H El Dirani, P Fonteneau, M Bawedin, S Sato, S Cristoloveanu 2018 48th European Solid-State Device Research Conference (ESSDERC), 74-77, 2018 | 11 | 2018 |
| A band-modulation device in advanced FDSOI technology: Sharp switching characteristics H El Dirani, Y Solaro, P Fonteneau, CA Legrand, D Marin-Cudraz, ... Solid-State Electronics 125, 103-110, 2016 | 11 | 2016 |
| Memory cell H El Dirani, Y Solaro, P Fonteneau US Patent 9,905,565, 2018 | 7 | 2018 |
| The mystery of the Z2-FET 1T-DRAM memory M Bawedin, H El Dirani, K Lee, MS Parihar, J Lacord, S Martinie, ... 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 3 | 2017 |
| Inverting circuit H El Dirani, P Fonteneau US Patent 10,978,487, 2021 | 2 | 2021 |
| Memory array comprising memory cells of Z2-FET type H El Dirani, T Bedecarrats, P Galy US Patent 10,804,275, 2020 | 1 | 2020 |
