| Residual metallic contamination of transferred chemical vapor deposited graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS nano 9 (5), 4776-4785, 2015 | 325 | 2015 |
| A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano letters 13 (4), 1435-1439, 2013 | 280 | 2013 |
| Vertical graphene base transistor W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ... IEEE Electron Device Letters 33 (5), 691-693, 2012 | 188 | 2012 |
| Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ... 2D Materials 4 (1), 015024, 2016 | 164 | 2016 |
| Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ... 2D Materials 4 (2), 025075, 2017 | 145 | 2017 |
| Field emission from single and few-layer graphene flakes S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ... Applied Physics Letters 98 (16), 163109, 2011 | 119 | 2011 |
| Graphene growth on Ge (100)/Si (100) substrates by CVD method I Pasternak, M Wesolowski, I Jozwik, M Lukosius, G Lupina, P Dabrowski, ... Scientific reports 6 (1), 1-7, 2016 | 114 | 2016 |
| Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics A Di Bartolomeo, F Giubileo, F Romeo, P Sabatino, G Carapella, L Iemmo, ... Nanotechnology 26 (47), 475202, 2015 | 112 | 2015 |
| Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors A Di Bartolomeo, F Giubileo, S Santandrea, F Romeo, R Citro, ... Nanotechnology 22 (27), 275702, 2011 | 92 | 2011 |
| Titanium-added praseodymium silicate high- layers on Si(001) T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ... Applied Physics Letters 87 (2), 022902, 2005 | 86 | 2005 |
| Contact resistance and mobility in back-gate graphene transistors F Urban, G Lupina, A Grillo, N Martucciello, A Di Bartolomeo Nano Express 1 (1), 010001, 2020 | 83 | 2020 |
| Direct graphene growth on insulator G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina physica status solidi (b) 248 (11), 2619-2622, 2011 | 83 | 2011 |
| Graphene grown on Ge (001) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ... Carbon 75, 104-112, 2014 | 80 | 2014 |
| Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors A Di Bartolomeo, S Santandrea, F Giubileo, F Romeo, M Petrosino, ... Diamond and Related Materials 38, 19-23, 2013 | 78 | 2013 |
| Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016 | 74 | 2016 |
| Microscopic model for the nonlinear behavior of high- metal-insulator-metal capacitors C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe Journal of Applied Physics 103 (10), 104103, 2008 | 72 | 2008 |
| Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors S Vaziri, M Belete, ED Litta, AD Smith, G Lupina, MC Lemme, M Östling Nanoscale 7 (30), 13096-13104, 2015 | 61 | 2015 |
| Thin high- dielectric layers on TiN for memory capacitor applications G Lupina, G Kozłowski, J Dabrowski, C Wenger, P Dudek, P Zaumseil, ... Applied Physics Letters 92 (6), 062906, 2008 | 58 | 2008 |
| Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays A Di Bartolomeo, M Passacantando, G Niu, V Schlykow, G Lupina, ... Nanotechnology 27 (48), 485707, 2016 | 56 | 2016 |
| Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays A Di Bartolomeo, M Passacantando, G Niu, V Schlykow, G Lupina, ... Nanotechnology 27 (48), 485707, 2016 | 56 | 2016 |
Gunther Lippertlimited access caused by retirement, Frankfurt (Oder) GermanyVerified email at ihp-microelectronics.com
