Grzegorz Lupina
Grzegorz Lupina
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Cited by
Residual metallic contamination of transferred chemical vapor deposited graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano letters 13 (4), 1435-1439, 2013
Vertical graphene base transistor
W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ...
2D Materials 4 (1), 015024, 2016
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect
A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ...
2D Materials 4 (2), 025075, 2017
Graphene growth on Ge (100)/Si (100) substrates by CVD method
I Pasternak, M Wesolowski, I Jozwik, M Lukosius, G Lupina, P Dabrowski, ...
Scientific reports 6 (1), 1-7, 2016
Field emission from single and few-layer graphene flakes
S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ...
Applied Physics Letters 98 (16), 163109, 2011
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics
A Di Bartolomeo, F Giubileo, F Romeo, P Sabatino, G Carapella, L Iemmo, ...
Nanotechnology 26 (47), 475202, 2015
Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors
A Di Bartolomeo, F Giubileo, S Santandrea, F Romeo, R Citro, ...
Nanotechnology 22 (27), 275702, 2011
Titanium-added praseodymium silicate high- layers on Si(001)
T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ...
Applied Physics Letters 87 (2), 022902, 2005
Direct graphene growth on insulator
G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina
physica status solidi (b) 248 (11), 2619-2622, 2011
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates
M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ...
ACS applied materials & interfaces 8 (49), 33786-33793, 2016
Graphene grown on Ge (001) from atomic source
G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ...
Carbon 75, 104-112, 2014
Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
A Di Bartolomeo, S Santandrea, F Giubileo, F Romeo, M Petrosino, ...
Diamond and Related Materials 38, 19-23, 2013
Microscopic model for the nonlinear behavior of high- metal-insulator-metal capacitors
C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe
Journal of Applied Physics 103 (10), 104103, 2008
Contact resistance and mobility in back-gate graphene transistors
F Urban, G Lupina, A Grillo, N Martucciello, A Di Bartolomeo
Nano Express 1 (1), 010001, 2020
Thin high- dielectric layers on TiN for memory capacitor applications
G Lupina, G Kozłowski, J Dabrowski, C Wenger, P Dudek, P Zaumseil, ...
Applied Physics Letters 92 (6), 062906, 2008
Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors
S Vaziri, M Belete, ED Litta, AD Smith, G Lupina, MC Lemme, M Östling
Nanoscale 7 (30), 13096-13104, 2015
Structure and strain relaxation mechanisms of ultrathin epitaxial films on Si(111)
T Schroeder, TL Lee, L Libralesso, I Joumard, J Zegenhagen, P Zaumseil, ...
Journal of applied physics 97 (7), 074906, 2005
Understanding the growth mechanism of graphene on Ge/Si (001) surfaces
J Dabrowski, G Lippert, J Avila, J Baringhaus, I Colambo, YS Dedkov, ...
Scientific Reports 6, 31639, 2016
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