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Nicolas Baron
Nicolas Baron
Knowmade
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Year
GaN transistor characteristics at elevated temperatures
A Pérez-Tomás, M Placidi, N Baron, S Chenot, Y Cordier, JC Moreno, ...
Journal of Applied Physics 106 (7), 2009
922009
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ...
Journal of Applied Physics 113 (17), 2013
832013
The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si (111)
N Baron, Y Cordier, S Chenot, P Vennéguès, O Tottereau, M Leroux, ...
Journal of Applied Physics 105 (3), 2009
642009
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 2011
612011
Demonstration of AlGaN/GaN high-electron-mobility transistors grown by molecular beam epitaxy on Si (110)
Y Cordier, JC Moreno, N Baron, E Frayssinet, S Chenot, B Damilano, ...
IEEE electron device letters 29 (11), 1187-1189, 2008
612008
Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators
M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ...
Applied Physics Letters 94 (23), 2009
562009
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
Y Cordier, M Azize, N Baron, S Chenot, O Tottereau, J Massies
Journal of crystal growth 309 (1), 1-7, 2007
382007
Growth of GaN based structures on Si (1 1 0) by molecular beam epitaxy
Y Cordier, JC Moreno, N Baron, E Frayssinet, JM Chauveau, M Nemoz, ...
Journal of crystal growth 312 (19), 2683-2688, 2010
362010
High temperature behaviour of GaN HEMT devices on Si (111) and sapphire substrates
R Cuerdo, F Calle, AF Braña, Y Cordier, M Azize, N Baron, S Chenot, ...
physica status solidi c 5 (6), 1971-1973, 2008
342008
Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET
A Fontserè, A Pérez-Tomás, M Placidi, P Fernández-Martínez, N Baron, ...
Microelectronic engineering 88 (10), 3140-3144, 2011
312011
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
Y Cordier, N Baron, F Semond, J Massies, M Binetti, B Henninger, ...
Journal of crystal growth 301, 71-74, 2007
282007
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
Y Cordier, N Baron, S Chenot, P Vennéguès, O Tottereau, M Leroux, ...
Journal of crystal growth 311 (7), 2002-2005, 2009
272009
Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
A Fontserè, A Perez-Tomas, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied physics letters 101 (9), 2012
242012
Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
Y Cordier, M Azize, N Baron, Z Bougrioua, S Chenot, O Tottereau, ...
Journal of crystal growth 310 (5), 948-954, 2008
232008
Investigation of AlGaN∕ AlN∕ GaN heterostructures for magnetic sensor application from liquid helium temperature to 300° C
L Bouguen, S Contreras, B Jouault, L Konczewicz, J Camassel, Y Cordier, ...
Applied Physics Letters 92 (4), 2008
222008
Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance
A Pérez-Tomás, A Fontsere, M Placidi, N Baron, S Chenot, JC Moreno, ...
Semiconductor Science and Technology 27 (12), 125010, 2012
212012
Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Nanotechnology 23 (39), 395204, 2012
182012
Bulk temperature impact on the AlGaN/GaN HEMT forward current on Si, sapphire and free-standing GaN
A Fontserè, A Pérez-Tomás, M Placidi, N Baron, S Chenot, JC Moreno, ...
ECS Solid State Letters 2 (1), P4, 2012
162012
AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si (110): comparisons with Si (111) and Si (001)
Y Cordier, JC Moreno, N Baron, E Frayssinet, S Chenot, B Damilano, ...
physica status solidi c 6 (S2 2), S1020-S1023, 2009
152009
Optimisation de l'épitaxie sous jets moléculaires d'hétérostructures à base de GaN: application aux transistors à haute mobilité d'électrons sur substrat silicium
N Baron
Université Nice Sophia Antipolis, 2009
82009
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Articles 1–20