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Frederic Allibert
Frederic Allibert
Soitec
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Title
Cited by
Cited by
Year
Germanium-on-insulator (GeOI) substrates—a novel engineered substrate for future high performance devices
T Akatsu, C Deguet, L Sanchez, F Allibert, D Rouchon, T Signamarcheix, ...
Materials science in semiconductor processing 9 (4-5), 444-448, 2006
1722006
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...
2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012
1232012
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 9.2.1-9.2.4, 2013
1102013
Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium
C Deguet, L Sanchez, T Akatsu, F Allibert, J Dechamp, F Madeira, ...
Electronics Letters 42 (7), 415-417, 2006
942006
Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications
F Allibert, J Widiez
US Patent 9,129,800, 2015
842015
The multiple-gate MOS-JFET transistor
BJ BLALOCK, S CRISTOLOVEANU, BM DUFRENE, F Allibert, ...
International journal of high speed electronics and systems 12 (02), 511-520, 2002
802002
Impact of free-surface passivation on silicon on insulator buried interface properties by pseudotransistor characterization
G Hamaide, F Allibert, H Hovel, S Cristoloveanu
Journal of applied physics 101 (11), 114513, 2007
782007
Germanium-On-Insulator (GeOI) Structure Realized by the Smart Cut™ Technology
F Letertre, C Deguet, C Richtarch, B Faure, JM Hartmann, F Chieu, ...
MRS Proceedings 809, B4. 4, 2004
662004
The four-gate transistor
S Cristoloveanu, B Blalock, F Allibert, B Dufrene, M Mojarradi
Solid-State Device Research Conference, 2002. Proceeding of the 32ndá…, 2002
422002
From SOI materials to innovative devices
F Allibert, T Ernst, J Pretet, N Hefyene, C Perret, A Zaslavsky, ...
Solid-State Electronics 45 (4), 559-566, 2001
422001
FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node
Q Liu, B DeSalvo, P Morin, N Loubet, S Pilorget, F Chafik, S Maitrejean, ...
2014 IEEE International Electron Devices Meeting, 9.1. 1-9.1. 4, 2014
372014
Physical Models of Planar Spiral Inductor Integrated on the High-Resistivity and Trap-Rich Silicon-on-Insulator Substrates
S Liu, L Zhu, F Allibert, I Radu, X Zhu, Y Lu
IEEE Transactions on Electron Devices 64 (7), 2775-2781, 2017
332017
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies
B DeSalvo, P Morin, M Pala, G Ghibaudo, O Rozeau, Q Liu, A Pofelski, ...
2014 IEEE International Electron Devices Meeting, 7.2. 1-7.2. 4, 2014
312014
Internal Dissolution of Buried Oxide in SOI Wafers
O Kononchuk, F Boedt, F Allibert
Solid State Phenomena 131, 113-118, 2008
282008
Transition from partial to full depletion in silicon-on-insulator transistors: Impact of channel length
F Allibert, J Pretet, G Pananakakis, S Cristoloveanu
Applied physics letters 84 (7), 1192-1194, 2004
272004
Double-gate MOSFETs: Is gate alignment mandatory?
F Allibert, A Zaslavsky, J Pretet, S Cristoloveanu
31st European Solid-State Device Research Conference, 267-270, 2001
272001
A SPDT RF switch small-and large-signal characteristics on TR-HR SOI substrates
BK Esfeh, M Rack, S Makovejev, F Allibert, JP Raskin
IEEE Journal of the Electron Devices Society 6, 543-550, 2018
262018
A SPDT RF switch small-and large-signal characteristics on TR-HR SOI substrates
B Kazemi Esfeh, S Makovejev, F Allibert, JP Raskin
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 2017
26*2017
Method of fabricating a composite substrate with improved electrical properties
F Allibert, S Kerdiles
US Patent 7,449,395, 2008
242008
Substrate having a charged zone in an insulating buried layer
M Shaheen, F Allibert, G Gaudin, F Lallement, D Landru, K Landry, ...
US Patent 8,535,996, 2013
232013
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