| High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals S Kim, A Konar, WS Hwang, JH Lee, J Lee, J Yang, C Jung, H Kim, ... Nature communications 3 (1), 1011, 2012 | 1773 | 2012 |
| Two-dimensional semiconductors for transistors M Chhowalla, D Jena, H Zhang Nature Reviews Materials 1 (11), 1-15, 2016 | 1428 | 2016 |
| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1277 | 2018 |
| High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared W Choi, MY Cho, A Konar, JH Lee, GB Cha, SC Hong, S Kim, J Kim, ... Advanced materials 24 (43), 5832, 2012 | 1176 | 2012 |
| Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ... Nature communications 3 (1), 780, 2012 | 1157 | 2012 |
| Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee Nano letters 13 (5), 1983-1990, 2013 | 1096 | 2013 |
| Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors J Kang, W Liu, D Sarkar, D Jena, K Banerjee Physical Review X 4 (3), 031005, 2014 | 933 | 2014 |
| Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ... ACS nano 7 (2), 1072-1080, 2013 | 892 | 2013 |
| Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena Science 327 (5961), 60-64, 2010 | 862 | 2010 |
| Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena Applied Physics Letters 91 (9), 2007 | 840 | 2007 |
| High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande ACS nano 7 (6), 5446-5452, 2013 | 569 | 2013 |
| Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering D Jena, A Konar Physical review letters 98 (13), 136805, 2007 | 523 | 2007 |
| Charge scattering and mobility in atomically thin semiconductors N Ma, D Jena Physical Review X 4 (1), 011043, 2014 | 506 | 2014 |
| Anisotropic thermal conductivity in single crystal β-gallium oxide Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ... Applied Physics Letters 106 (11), 2015 | 504 | 2015 |
| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 426 | 2012 |
| Intrinsic electron mobility limits in β-Ga2O3 N Ma, N Tanen, A Verma, Z Guo, T Luo, HG Xing, D Jena Applied Physics Letters 109 (21), 2016 | 405 | 2016 |
| High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ... Applied Physics Letters 104 (20), 2014 | 399 | 2014 |
| Polarization effects in semiconductors: from ab initio theory to device applications D Jena Springer Science & Business Media, 2008 | 381 | 2008 |
| Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ... Nano letters 15 (9), 5791-5798, 2015 | 379 | 2015 |
| Effect of high- gate dielectrics on charge transport in graphene-based field effect transistors A Konar, T Fang, D Jena Physical Review B—Condensed Matter and Materials Physics 82 (11), 115452, 2010 | 370 | 2010 |
