| Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots P Hazdra, J Voves, J Oswald, K Kuldová, A Hospodková, E Hulicius, ... Microelectronics Journal 39 (8), 1070-1074, 2008 | 37 | 2008 |
| Performance evaluation of low-cost flexible gas sensor array with nanocomposite polyaniline films J Kroutil, A Laposa, J Voves, M Davydova, J Nahlik, P Kulha, M Husak IEEE Sensors Journal 18 (9), 3759-3766, 2018 | 34 | 2018 |
| Metamaterial-inspired perfect tunnelling in semiconductor heterostructures L Jelinek, JD Baena, J Voves, R Marques New Journal of Physics 13 (8), 083011, 2011 | 31 | 2011 |
| Gas-sensing behaviour of ZnO/diamond nanostructures M Davydova, A Laposa, J Smarhak, A Kromka, N Neykova, J Nahlik, ... Beilstein Journal of Nanotechnology 9 (1), 22-29, 2018 | 30 | 2018 |
| Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas AH Bayani, D Dideban, J Voves, N Moezi Superlattices and Microstructures 105, 110-116, 2017 | 21 | 2017 |
| A high sensitivity UV photodetector with inkjet printed ZnO/nanodiamond active layers J Nahlik, A Laposa, J Voves, J Kroutil, J Drahokoupil, M Davydova IEEE Sensors Journal 19 (14), 5587-5593, 2019 | 16 | 2019 |
| Accurate Simulation of Combined Electron and Ion Irradiated Silicon Power devices for Local Lifetime Tailoring J Vobecky, P Hazdra, J Voves, F Spurny, J Homola Proc. of the 6th ISPSD 94, 265-270, 1994 | 11* | 1994 |
| Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET) AH Bayani, J Voves, D Dideban Superlattices and Microstructures 113, 769-776, 2018 | 10 | 2018 |
| InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy P Hazdra, J Voves, J Oswald, E Hulicius, J Pangrac, T Šimeček Journal of crystal growth 248, 328-332, 2003 | 10 | 2003 |
| Properties of boron-doped (113) oriented homoepitaxial diamond layers V Mortet, A Taylor, N Lambert, Z Gedeonová, L Fekete, J Lorinčik, ... Diamond and Related Materials 111, 108223, 2021 | 9 | 2021 |
| A perfect lens for ballistic electrons: An electron-light wave analogy I Hrebikova, L Jelinek, J Voves, JD Baena Photonics and Nanostructures-Fundamentals and Applications 12 (1), 9-15, 2014 | 9 | 2014 |
| Photonics Nanostruct LJ Hrebikova, J Voves, JD Baena Fundam. Appl 12 (9), 2014 | 9 | 2014 |
| Modeling current transport in boron-doped diamond at high electric fields including self-heating effect N Lambert, A Taylor, P Hubík, J Bulíř, J More-Chevalier, H Karaca, ... Diamond and Related Materials 109, 108003, 2020 | 8 | 2020 |
| Polyaniline emeraldine salt as an ammonia gas sensor-Comparison of quantum-based simulation with experiment H Sustkova, A Posta, J Voves Physica E: Low-dimensional Systems and Nanostructures 114, 113621, 2019 | 8 | 2019 |
| Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers P Hazdra, A Laposa, Z Šobáň, J Voves, N Lambert, M Davydova, ... Diamond and Related Materials 121, 108797, 2022 | 7 | 2022 |
| Lithography on GaMnAs layer by AFM local anodic oxidation in the AC mode M Janoušek, J Halada, J Voves Microelectronic engineering 87 (5-8), 1066-1069, 2010 | 7 | 2010 |
| The AFM LAO lithography on GaMnAs layers J Voves, M Cukr, V Novák Microelectronic Engineering 86 (4-6), 561-564, 2009 | 7 | 2009 |
| Lasers with δ InAs layers in GaAs J Oswald, E Hulicius, J Pangrác, K Melichar, T Šimeček, O Petřı́ček, ... Materials Science and Engineering: B 88 (2-3), 312-316, 2002 | 7 | 2002 |
| Erbium–bismuth-doped germanium silicate active optic glass for broad-band optical amplification J Šmejcký, V Jeřábek, D Mareš, J Voves, P Vařák, J Cajzl, J Oswald, ... Optical Materials 137, 113621, 2023 | 6 | 2023 |
| Inkjet seeded CVD-grown hydrogenated diamond gas sensor under UV-LED illumination A Laposa, J Kroutil, M Davydova, A Taylor, J Voves, L Klimsa, J Kopecek, ... IEEE Sensors Journal 20 (3), 1158-1165, 2019 | 6 | 2019 |
Alexandr LaposaCzech Technical UniversityVerified email at fel.cvut.cz
