| Spin-state transition and high-spin polarons in LaCo S Yamaguchi, Y Okimoto, H Taniguchi, Y Tokura Physical Review B 53 (6), R2926, 1996 | 394 | 1996 |
| Local lattice distortion during the spin-state transition in S Yamaguchi, Y Okimoto, Y Tokura Physical Review B 55 (14), R8666, 1997 | 366 | 1997 |
| Thermally induced insulator-metal transition in A view based on the Mott transition Y Tokura, Y Okimoto, S Yamaguchi, H Taniguchi, T Kimura, H Takagi Physical Review B 58 (4), R1699, 1998 | 249 | 1998 |
| Bandwidth dependence of insulator-metal transitions in perovskite cobalt oxides S Yamaguchi, Y Okimoto, Y Tokura Physical Review B 54 (16), R11022, 1996 | 218 | 1996 |
| Magnetoresistance in metallic crystals of La1-xSrxCoO3 S Yamaguchi, H Taniguchi, H Takagi, T Arima, Y Tokura Journal of the Physical Society of Japan 64 (6), 1885-1888, 1995 | 176 | 1995 |
| Laser annealing apparatus, TFT device and annealing method of the same M Hongo, S Uto, M Nomoto, T Nakata, M Hatano, S Yamaguchi, M Ohkura US Patent 6,943,086, 2005 | 150 | 2005 |
| Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus M Hatano, S Yamaguchi, Y Kimura, SK Park US Patent 6,756,614, 2004 | 105 | 2004 |
| Magneto-optical Kerr effects in perovskite-type transition-metal oxides: and S Yamaguchi, Y Okimoto, K Ishibashi, Y Tokura Physical Review B 58 (11), 6862, 1998 | 104 | 1998 |
| Method of producing semiconductor device and semiconductor substrate N Sugii, S Yamaguchi, K Washio US Patent 6,723,541, 2004 | 97 | 2004 |
| Spin state and metal–insulator transition in LaCoO3 and RCoO3 (R= Nd, Sm and Eu) M Itoh, J Hashimoto, S Yamaguchi, Y Tokura Physica B: Condensed Matter 281, 510-511, 2000 | 95 | 2000 |
| Solid-phase crystallization of Si1− xGex alloy layers S Yamaguchi, N Sugii, SK Park, K Nakagawa, M Miyao Journal of Applied Physics 89 (4), 2091-2095, 2001 | 92 | 2001 |
| Role of buffer layer on mobility enhancement in a strained-Si -channel metal–oxide–semiconductor field-effect transistor N Sugii, K Nakagawa, S Yamaguchi, M Miyao Applied physics letters 75 (19), 2948-2950, 1999 | 88 | 1999 |
| Semiconductor memory S Yamaguchi, T Uchida, Y Yagishita, Y Bando, M Yada, M Okuda, ... US Patent 6,754,126, 2004 | 83 | 2004 |
| Thin film transistor S Yamaguchi, M Hatano, T Shiba, Y Kimura, SK Park US Patent 6,501,095, 2002 | 82 | 2002 |
| Display device, process of fabricating same, and apparatus for fabricating same M Hongo, S Uto, M Nomoto, T Nakata, M Hatano, S Yamaguchi, M Ohkura US Patent 7,129,124, 2006 | 77 | 2006 |
| Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots Y Tsuchiya, K Takai, N Momo, T Nagami, H Mizuta, S Oda, S Yamaguchi, ... Journal of applied physics 100 (9), 2006 | 70 | 2006 |
| Performance of poly-Si TFTs fabricated by SELAX M Tai, M Hatano, S Yamaguchi, T Noda, SK Park, T Shiba, M Ohkura IEEE Transactions on Electron Devices 51 (6), 934-939, 2004 | 68 | 2004 |
| NMR study of the spin state of RCoO3 (R= Pr, Nd, Sm, and Eu) M Itoh, M Mori, S Yamaguchi, Y Tokura Physica B: Condensed Matter 259, 902-903, 1999 | 66 | 1999 |
| Image display S Yamaguchi, M Hatano, T Hattori, N Okada US Patent 8,294,869, 2012 | 57 | 2012 |
| High electron mobility in strained Si channel of heterostructure with abrupt interface N Sugii, K Nakagawa, Y Kimura, S Yamaguchi, M Miyao Semiconductor science and technology 13 (8A), A140, 1998 | 53 | 1998 |
