Giorgos Fagas

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James C. GreerChair Professor in Engineering Physics, University of Nottingham, Ningbo, China campusVerified email at nottingham.edu.cn
Gianaurelio (Giovanni) CunibertiTU Dresden; https://ORCID.org/0000-0002-6574-7848Verified email at tu-dresden.de
Michael NolanTyndall National Institute, University College Cork, IrelandVerified email at tyndall.ie
Rafael GutierrezTU DresdenVerified email at nano.tu-dresden.de
Colin J. LambertResearch Professor, Lancaster UniversityVerified email at lancaster.ac.uk
Frank GrossmannInstitut für Theoretische Physik, Technische Universität Dresden, Dresden, GermanyVerified email at physik.tu-dresden.de
Isabelle FerainGlobalfoundriesVerified email at globalfoundries.com
Hadi H. ArefiSimulation of Energy Materials, Helmholtz-Zentrum BerlinVerified email at helmholtz-berlin.de
Luca GammaitoniNiPS laboratory, Dipartimento di Fisica, Università di PerugiaVerified email at nipslab.org
Douglas J PaulRoyal Academy of Engineering Chair in Emerging Technologies, University of GlasgowVerified email at glasgow.ac.uk
Aryan AfzalianUniversité catholique de LouvainVerified email at uclouvain.be
Ran Yan (Ruby)GLOBALFOUNDRIESVerified email at globalfoundries.com
ND AkhavanThe University of Western AustraliaVerified email at uwa.edu.au
A.M. IonescuProfessor of NanoelectronicsVerified email at epfl.ch
Thomas FrauenheimProfessor für Computational Materials ScienceVerified email at bccms.uni-bremen.de
Sean O'CallaghanData Engineer, NovartisVerified email at novartis.com
Elizabeth BuitragoHitachi EnergyVerified email at hitachienergy.com
A.N.NazarovInstitute of Semiconductor Physics NASUVerified email at lab15.kiev.ua
Sylvain BARRAUDCEA-LETI, Minatec CampusVerified email at cea.fr
Dr. Eoin R. HydeInnersight Labs Ltd & RAEng Enterprise FellowVerified email at innersightlabs.com

Giorgos Fagas

Tyndall National Institute

Verified email at tyndall.ie

electronic transport nanowires molecular electronics disordered systems device simulations


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Introducing molecular electronics G.(Gianaurelio) Cuniberti, G.(Giorgos) Fagas, K Richter Springer, 2005	536*	2005
Silicon nanowire band gap modification M Nolan, S O'Callaghan, G Fagas, JC Greer, T Frauenheim Nano letters 7 (1), 34-38, 2007	285	2007
The potential and global outlook of integrated photonics for quantum technologies E Pelucchi, G Fagas, I Aharonovich, D Englund, E Figueroa, Q Gong, ... Nature Reviews Physics 4 (3), 194-208, 2022	156	2022
Theory of an all-carbon molecular switch R Gutiérrez, G Fagas, G Cuniberti, F Grossmann, R Schmidt, K Richter Physical Review B 65 (11), 113410, 2002	130	2002
Simulation of junctionless Si nanowire transistors with 3 nm gate length L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer Applied Physics Letters 97 (6), 2010	126	2010
Deformation potentials and electron− phonon coupling in silicon nanowires F Murphy-Armando, G Fagas, JC Greer Nano letters 10 (3), 869-873, 2010	73	2010
Lattice dynamics of a disordered solid-solid interface G Fagas, AG Kozorezov, CJ Lambert, JK Wigmore, A Peacock, A Poelaert, ... Physical review b 60 (9), 6459, 1999	71	1999
Fingerprints of mesoscopic leads in the conductance of a molecular wire G Cuniberti, G Fagas, K Richter Chemical physics 281 (2-3), 465-476, 2002	65	2002
Phonon-mediated thermal conductance of mesoscopic wires with rough edges A Kambili, G Fagas, VI Fal’ko, CJ Lambert Physical review b 60 (23), 15593, 1999	64	1999
A proposed confinement modulated gap nanowire transistor based on a metal (tin) L Ansari, G Fagas, JP Colinge, JC Greer Nano letters 12 (5), 2222-2227, 2012	62	2012
Geometrical enhancement of the proximity effect in quantum wires with extended superconducting tunnel contacts G Fagas, G Tkachov, A Pfund, K Richter Physical Review B 71 (22), 224510, 2005	59	2005
Ballistic conductance in oxidized Si nanowires G Fagas, JC Greer Nano letters 9 (5), 1856-1860, 2009	51	2009
Chemical trends in the work function of modified Si (111) surfaces: A DFT study HH Arefi, G Fagas The Journal of Physical Chemistry C 118 (26), 14346-14354, 2014	49	2014
Tunnelling in alkanes anchored to gold electrodes via amine end groups G Fagas, JC Greer Nanotechnology 18 (42), 424010, 2007	47	2007
Tunnel currents across silane diamines/dithiols and alkane diamines/dithiols: A comparative computational study S McDermott, CB George, G Fagas, JC Greer, MA Ratner The Journal of Physical Chemistry C 113 (2), 744-750, 2009	46	2009
Independent particle descriptions of tunneling using the many-body quantum transport approach G Fagas, P Delaney, JC Greer Physical Review B 73 (24), 241314, 2006	46	2006
Electron transport in nanotube–molecular-wire hybrids G Fagas, G Cuniberti, K Richter Physical Review B 63 (4), 045416, 2001	46	2001
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu Sensors and Actuators B: Chemical 183, 1-10, 2013	45	2013
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas Microelectronic Engineering 109, 326-329, 2013	40	2013
Complex-band structure: a method to determine the off-resonant electron transport in oligomers G Fagas, A Kambili, M Elstner Chemical physics letters 389 (4-6), 268-273, 2004	39	2004

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