Giorgos Fagas
Giorgos Fagas
Tyndall National Institute
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Cited by
Cited by
Introducing molecular electronics
G.(Gianaurelio) Cuniberti, G.(Giorgos) Fagas, K Richter
Springer, 2005
Silicon nanowire band gap modification
M Nolan, S O'Callaghan, G Fagas, JC Greer, T Frauenheim
Nano letters 7 (1), 34-38, 2007
The potential and global outlook of integrated photonics for quantum technologies
E Pelucchi, G Fagas, I Aharonovich, D Englund, E Figueroa, Q Gong, ...
Nature Reviews Physics 4 (3), 194-208, 2022
Theory of an all-carbon molecular switch
R Gutiérrez, G Fagas, G Cuniberti, F Grossmann, R Schmidt, K Richter
Physical Review B 65 (11), 113410, 2002
Simulation of junctionless Si nanowire transistors with 3 nm gate length
L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer
Applied Physics Letters 97 (6), 2010
Deformation potentials and electron− phonon coupling in silicon nanowires
F Murphy-Armando, G Fagas, JC Greer
Nano letters 10 (3), 869-873, 2010
Lattice dynamics of a disordered solid-solid interface
G Fagas, AG Kozorezov, CJ Lambert, JK Wigmore, A Peacock, A Poelaert, ...
Physical review b 60 (9), 6459, 1999
Fingerprints of mesoscopic leads in the conductance of a molecular wire
G Cuniberti, G Fagas, K Richter
Chemical physics 281 (2-3), 465-476, 2002
Phonon-mediated thermal conductance of mesoscopic wires with rough edges
A Kambili, G Fagas, VI Fal’ko, CJ Lambert
Physical review b 60 (23), 15593, 1999
A proposed confinement modulated gap nanowire transistor based on a metal (tin)
L Ansari, G Fagas, JP Colinge, JC Greer
Nano letters 12 (5), 2222-2227, 2012
Geometrical enhancement of the proximity effect in quantum wires with extended superconducting tunnel contacts
G Fagas, G Tkachov, A Pfund, K Richter
Physical Review B 71 (22), 224510, 2005
Ballistic conductance in oxidized Si nanowires
G Fagas, JC Greer
Nano letters 9 (5), 1856-1860, 2009
Chemical trends in the work function of modified Si (111) surfaces: A DFT study
HH Arefi, G Fagas
The Journal of Physical Chemistry C 118 (26), 14346-14354, 2014
Tunnelling in alkanes anchored to gold electrodes via amine end groups
G Fagas, JC Greer
Nanotechnology 18 (42), 424010, 2007
Tunnel currents across silane diamines/dithiols and alkane diamines/dithiols: A comparative computational study
S McDermott, CB George, G Fagas, JC Greer, MA Ratner
The Journal of Physical Chemistry C 113 (2), 744-750, 2009
Independent particle descriptions of tunneling using the many-body quantum transport approach
G Fagas, P Delaney, JC Greer
Physical Review B 73 (24), 241314, 2006
Electron transport in nanotube–molecular-wire hybrids
G Fagas, G Cuniberti, K Richter
Physical Review B 63 (4), 045416, 2001
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu
Sensors and Actuators B: Chemical 183, 1-10, 2013
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas
Microelectronic Engineering 109, 326-329, 2013
Complex-band structure: a method to determine the off-resonant electron transport in oligomers
G Fagas, A Kambili, M Elstner
Chemical physics letters 389 (4-6), 268-273, 2004
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