X. Wallart
X. Wallart
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Organic monolayers on Si (111) by electrochemical method
P Allongue, CH De Villeneuve, J Pinson, F Ozanam, JN Chazalviel, ...
Electrochimica Acta 43 (19-20), 2791-2798, 1998
Kinetic model of element III segregation during molecular beam epitaxy of III‐III′‐V semiconductor compounds
O Dehaese, X Wallart, F Mollot
Applied Physics Letters 66 (1), 52-54, 1995
Truly quantitative XPS characterization of organic monolayers on silicon: study of alkyl and alkoxy monolayers on H− Si (111)
X Wallart, C Henry de Villeneuve, P Allongue
Journal of the American Chemical Society 127 (21), 7871-7878, 2005
Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
S Plissard, KA Dick, G Larrieu, S Godey, A Addad, X Wallart, P Caroff
Nanotechnology 21 (38), 385602, 2010
High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
S Plissard, G Larrieu, X Wallart, P Caroff
Nanotechnology 22 (27), 275602, 2011
Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques
T Xu, KA Dick, S Plissard, TH Nguyen, Y Makoudi, M Berthe, JP Nys, ...
Nanotechnology 23 (9), 095702, 2012
Graphene growth by molecular beam epitaxy using a solid carbon source
E Moreau, FJ Ferrer, D Vignaud, S Godey, X Wallart
physica status solidi (a) 207 (2), 300-303, 2010
Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities
G Larrieu, E Dubois, X Wallart, X Baie, J Katcki
Journal of Applied Physics 94 (12), 7801-7810, 2003
Photochemical oxidation of hydrogenated boron-doped diamond surfaces
R Boukherroub, X Wallart, S Szunerits, B Marcus, P Bouvier, M Mermoux
Electrochemistry Communications 7 (9), 937-940, 2005
Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study
J Avila, I Razado, S Lorcy, R Fleurier, E Pichonat, D Vignaud, X Wallart, ...
Scientific reports 3 (1), 2439, 2013
Graphene growth by molecular beam epitaxy on the carbon-face of SiC
E Moreau, S Godey, FJ Ferrer, D Vignaud, X Wallart, J Avila, MC Asensio, ...
Applied Physics Letters 97 (24), 2010
Gold-free ternary III–V antimonide nanowire arrays on silicon: twin-free down to the first bilayer
S Conesa-Boj, D Kriegner, XL Han, S Plissard, X Wallart, J Stangl, ...
Nano letters 14 (1), 326-332, 2014
Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
S Plissard, KA Dick, X Wallart, P Caroff
Applied Physics Letters 96 (12), 2010
Imaging and controlling electron transport inside a quantum ring
B Hackens, F Martins, T Ouisse, H Sellier, S Bollaert, X Wallart, A Cappy, ...
Nature Physics 2 (12), 826-830, 2006
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
H Sellier, B Hackens, MG Pala, F Martins, S Baltazar, X Wallart, ...
Semiconductor science and technology 26 (6), 064008, 2011
Bonding in skutterudites: Combined experimental and theoretical characterization of
I Lefebvre-Devos, M Lassalle, X Wallart, J Olivier-Fourcade, L Monconduit, ...
Physical Review B 63 (12), 125110, 2001
Imaging electron wave functions inside open quantum rings
F Martins, B Hackens, MG Pala, T Ouisse, H Sellier, X Wallart, S Bollaert, ...
Physical review letters 99 (13), 136807, 2007
Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers
C Tetelin, X Wallart, JP Nys, L Vescan, DJ Gravesteijn
Journal of Applied Physics 83 (5), 2842-2846, 1998
Single‐channel 100 Gbit/s transmission using III–V UTC‐PDs for future IEEE 802.15. 3d wireless links in the 300 GHz band
VK Chinni, P Latzel, M Zegaoui, C Coinon, X Wallart, E Peytavit, ...
Electronics Letters 54 (10), 638-640, 2018
Imaging Coulomb islands in a quantum Hall interferometer
B Hackens, F Martins, S Faniel, CA Dutu, H Sellier, S Huant, M Pala, ...
Nature communications 1 (1), 39, 2010
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