M. Twigg
M. Twigg
Naval Research Laboratory
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A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly
IL Medintz, JH Konnert, AR Clapp, I Stanish, ME Twigg, H Mattoussi, ...
Proceedings of the National Academy of Sciences 101 (26), 9612-9617, 2004
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
DD Koleske, AE Wickenden, RL Henry, ME Twigg
Journal of crystal growth 242 (1-2), 55-69, 2002
GaN decomposition in H2 and N2 at MOVPE temperatures and pressures
DD Koleske, AE Wickenden, RL Henry, JC Culbertson, ME Twigg
Journal of crystal growth 223 (4), 466-483, 2001
Thiol-terminated di-, tri-, and tetraethylene oxide functionalized gold nanoparticles: a water-soluble, charge-neutral cluster
EE Foos, AW Snow, ME Twigg, MG Ancona
Chemistry of Materials 14 (5), 2401-2408, 2002
Resistivity control in unintentionally doped GaN films grown by MOCVD
AE Wickenden, DD Koleske, RL Henry, ME Twigg, M Fatemi
Journal of crystal growth 260 (1-2), 54-62, 2004
Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ...
Journal of Electronic Materials 29, 897-900, 2000
Enhanced GaN decomposition in H2 near atmospheric pressures
DD Koleske, AE Wickenden, RL Henry, ME Twigg, JC Culbertson, ...
Applied physics letters 73 (14), 2018-2020, 1998
Review of LiFePO4 phase transition mechanisms and new observations from x-ray absorption spectroscopy
CT Love, A Korovina, CJ Patridge, KE Swider-Lyons, ME Twigg, ...
Journal of The Electrochemical Society 160 (5), A3153, 2013
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
M Peckerar, R Henry, D Koleske, A Wickenden, CR Eddy Jr, R Holm, ...
US Patent 7,198,970, 2007
Structure of stacking faults formed during the forward bias of diodes
ME Twigg, RE Stahlbush, M Fatemi, SD Arthur, JB Fedison, JB Tucker, ...
Applied physics letters 82 (15), 2410-2412, 2003
Lattice walks by long jumps
JD Wrigley, ME Twigg, G Ehrlich
The Journal of chemical physics 93 (4), 2885-2902, 1990
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys
AE Wickenden, DD Koleske, RL Henry, RJ Gorman, ME Twigg, M Fatemi, ...
Journal of Electronic Materials 29, 21-26, 2000
Surface segregation and structure of Sb-doped Si (100) films grown at low temperature by molecular beam epitaxy
KD Hobart, DJ Godbey, ME Twigg, M Fatemi, PE Thompson, DS Simons
Surface Science 334 (1-3), 29-38, 1995
Growth of high quality, epitaxial InSb nanowires
HD Park, SM Prokes, ME Twigg, Y Ding, ZL Wang
Journal of Crystal Growth 304 (2), 399-401, 2007
Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging
YN Picard, JD Caldwell, ME Twigg, CR Eddy, MA Mastro, RL Henry, ...
Applied Physics Letters 91 (9), 2007
Low‐temperature cleaning processes for Si molecular beam epitaxy
PE Thompson, ME Twigg, DJ Godbey, KD Hobart, DS Simons
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer…, 1993
Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers
SNG Chu, S Nakahara, ME Twigg, LA Koszi, EJ Flynn, AK Chin, ...
Journal of applied physics 63 (3), 611-623, 1988
Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging
YN Picard, ME Twigg, JD Caldwell, CR Eddy Jr, MA Mastro, RT Holm
Scripta Materialia 61 (8), 773-776, 2009
Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC
DD Koleske, RL Henry, ME Twigg, JC Culbertson, SC Binari, ...
Applied physics letters 80 (23), 4372-4374, 2002
Evolution of GaSb epitaxy on GaAs(001)‐c(44)
PM Thibado, BR Bennett, ME Twigg, BV Shanabrook, LJ Whitman
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (3…, 1996
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