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Stanislav Markov
Stanislav Markov
The University of Hong Kong
Verified email at stanmarkov.com
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Cited by
Cited by
Year
Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study
X Wang, AR Brown, N Idris, S Markov, G Roy, A Asenov
IEEE Transactions on Electron Devices 58 (8), 2293-2301, 2011
1562011
Towards polyoxometalate‐cluster‐based nano‐electronics
L Vilŕ‐Nadal, SG Mitchell, S Markov, C Busche, V Georgiev, A Asenov, ...
Chemistry–A European Journal 19 (49), 16502-16511, 2013
742013
Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions
S Markov, B Cheng, A Asenov
IEEE Electron Device Letters 33 (3), 315-317, 2012
632012
Enhanced photovoltaic properties induced by ferroelectric domain structures in organometallic halide perovskites
F Bi, S Markov, R Wang, YH Kwok, W Zhou, L Liu, X Zheng, GH Chen, ...
The Journal of Physical Chemistry C 121 (21), 11151-11158, 2017
502017
Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs
F Adamu-Lema, C Monzio Compagnoni, SM Amoroso, N Castellani, ...
Electron Devices, IEEE Transactions on 60 (2), 833 - 839, 2013
342013
Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG
S Markov, ASM Zain, B Cheng, A Asenov
2012 IEEE International SOI Conference (SOI), 1-2, 2012
332012
Si–SiO2 interface band‐gap transition – effects on MOS inversion layer
S Markov, PV Sushko, S Roy, C Fiegna, E Sangiorgi, AL Shluger, ...
physica status solidi (a) 205 (6), 1290-1295, 2008
322008
Permittivity of oxidized ultra-thin silicon films from atomistic simulations
S Markov, G Penazzi, YH Kwok, A Pecchia, B Aradi, T Frauenheim, ...
IEEE Electron Device Letters 36 (10), 1076-1078, 2015
312015
Atomic Level Modeling of Extremely Thin Silicon-on-Insulator MOSFETs Including the Silicon Dioxide: Electronic Structure
S Markov, B Aradi, CY Yam, H Xie, T Frauenheim, G Chen
IEEE Transactions on Electron Devices 62 (3), 696-704, 2015
302015
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov
Solid-state electronics 84, 120-126, 2013
222013
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013
222013
Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling
S Markov, Y Kwok, J Li, W Zhou, Y Zhou, G Chen
IEEE Transactions on Electron Devices 66 (3), 1167 - 1173, 2019
212019
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov
IEEE transactions on electron devices 60 (12), 4008-4013, 2013
212013
Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs with Thin BOX
Y Yang, S Markov, B Cheng, ASM Zain, X Liu, A Asenov
Electron Devices, IEEE Transactions on 60 (2), 739 - 745, 2013
212013
Direct tunnelling gate leakage variability in nano-CMOS transistors
S Markov, S Roy, A Asenov
IEEE transactions on electron devices 57 (11), 3106-3114, 2010
202010
Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
S Markov, SM Amoroso, L Gerrer, F Adamu-Lema, A Asenov
IEEE electron device letters 34 (5), 686-688, 2013
192013
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’simulation
SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
192012
A multi-scale modeling of junctionless field-effect transistors
CY Yam, J Peng, Q Chen, S Markov, JZ Huang, N Wong, W Cho Chew, ...
Applied Physics Letters 103 (6), 2013
172013
Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal-Oxide Storage
VP Georgiev, S Markov, L Vila-Nadal, C Busche, L Cronin, A Asenov
Electron Devices, IEEE Transactions on 61 (6), 2019 - 2026, 2014
162014
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale flash memories
SM Amoroso, L Gerrer, F Adamu-Lema, S Markov, A Asenov
2013 IEEE International Reliability Physics Symposium (IRPS), 3B. 4.1-3B. 4.6, 2013
132013
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