| Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study X Wang, AR Brown, N Idris, S Markov, G Roy, A Asenov IEEE Transactions on Electron Devices 58 (8), 2293-2301, 2011 | 157 | 2011 |
| Towards polyoxometalate‐cluster‐based nano‐electronics L Vilŕ‐Nadal, SG Mitchell, S Markov, C Busche, V Georgiev, A Asenov, ... Chemistry–A European Journal 19 (49), 16502-16511, 2013 | 82 | 2013 |
| Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions S Markov, B Cheng, A Asenov IEEE Electron Device Letters 33 (3), 315-317, 2012 | 64 | 2012 |
| Enhanced photovoltaic properties induced by ferroelectric domain structures in organometallic halide perovskites F Bi, S Markov, R Wang, YH Kwok, W Zhou, L Liu, X Zheng, GH Chen, ... The Journal of Physical Chemistry C 121 (21), 11151-11158, 2017 | 53 | 2017 |
| Permittivity of oxidized ultra-thin silicon films from atomistic simulations S Markov, G Penazzi, YH Kwok, A Pecchia, B Aradi, T Frauenheim, ... IEEE Electron Device Letters 36 (10), 1076-1078, 2015 | 36 | 2015 |
| Atomic Level Modeling of Extremely Thin Silicon-on-Insulator MOSFETs Including the Silicon Dioxide: Electronic Structure S Markov, B Aradi, CY Yam, H Xie, T Frauenheim, G Chen IEEE Transactions on Electron Devices 62 (3), 696-704, 2015 | 36 | 2015 |
| Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs F Adamu-Lema, C Monzio Compagnoni, SM Amoroso, N Castellani, ... Electron Devices, IEEE Transactions on 60 (2), 833 - 839, 2013 | 34 | 2013 |
| Si–SiO2 interface band‐gap transition – effects on MOS inversion layer S Markov, PV Sushko, S Roy, C Fiegna, E Sangiorgi, AL Shluger, ... physica status solidi (a) 205 (6), 1290-1295, 2008 | 33 | 2008 |
| Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG S Markov, ASM Zain, B Cheng, A Asenov 2012 IEEE International SOI Conference (SOI), 1-2, 2012 | 32 | 2012 |
| Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling S Markov, Y Kwok, J Li, W Zhou, Y Zhou, G Chen IEEE Transactions on Electron Devices 66 (3), 1167 - 1173, 2019 | 23 | 2019 |
| Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013 | 23 | 2013 |
| 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov IEEE transactions on electron devices 60 (12), 4008-4013, 2013 | 22 | 2013 |
| RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov Solid-State Electronics 84, 120-126, 2013 | 22 | 2013 |
| Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs with Thin BOX Y Yang, S Markov, B Cheng, ASM Zain, X Liu, A Asenov Electron Devices, IEEE Transactions on 60 (2), 739 - 745, 2013 | 21 | 2013 |
| Direct tunnelling gate leakage variability in nano-CMOS transistors S Markov, S Roy, A Asenov IEEE transactions on electron devices 57 (11), 3106-3114, 2010 | 20 | 2010 |
| A multi-scale modeling of junctionless field-effect transistors CY Yam, J Peng, Q Chen, S Markov, JZ Huang, N Wong, W Cho Chew, ... Applied Physics Letters 103 (6), 2013 | 19 | 2013 |
| Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs S Markov, SM Amoroso, L Gerrer, F Adamu-Lema, A Asenov IEEE electron device letters 34 (5), 686-688, 2013 | 19 | 2013 |
| Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’simulation SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov 2012 Proceedings of the European Solid-State Device Research Conference …, 2012 | 19 | 2012 |
| Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal-Oxide Storage VP Georgiev, S Markov, L Vila-Nadal, C Busche, L Cronin, A Asenov Electron Devices, IEEE Transactions on 61 (6), 2019 - 2026, 2014 | 18 | 2014 |
| Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET ASM Zain, S Markov, B Cheng, A Asenov Solid-state electronics 90, 51-55, 2013 | 13 | 2013 |
a asenovThe University of GlasgowVerified email at glasgow.ac.uk
