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Evelyne Martin
Evelyne Martin
ICube - CNRS
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Title
Cited by
Cited by
Year
Auger and coulomb charging effects in semiconductor nanocrystallites
C Delerue, M Lannoo, G Allan, E Martin, I Mihalcescu, JC Vial, ...
Physical review letters 75 (11), 2228, 1995
1791995
Hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallites
G Allan, C Delerue, M Lannoo, E Martin
Physical Review B 52 (16), 11982, 1995
1611995
Thermal conductivity from approach-to-equilibrium molecular dynamics
E Lampin, PL Palla, PA Francioso, F Cleri
Journal of Applied Physics 114 (3), 033525, 2013
1332013
Theory of excitonic exchange splitting and optical Stokes shift in silicon nanocrystallites: Application to porous silicon
E Martin, C Delerue, G Allan, M Lannoo
Physical Review B 50 (24), 18258, 1994
1131994
Theoretical descriptions of porous silicon
C Delerue, M Lannoo, G Allan, E Martin
Thin Solid Films 255 (1-2), 27-34, 1995
931995
Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations
E Lampin, QH Nguyen, PA Francioso, F Cleri
Applied Physics Letters 100 (13), 131906, 2012
902012
Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
C Krzeminski, Q Brulin, V Cuny, E Lecat, E Lampin, F Cleri
Journal of applied physics 101 (12), 123506, 2007
582007
Length dependence of thermal conductivity by approach-to-equilibrium molecular dynamics
H Zaoui, PL Palla, F Cleri, E Lampin
Physical Review B 94 (5), 054304, 2016
552016
Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon
E Lampin, V Senez, A Claverie
Journal of applied physics 85 (12), 8137-8144, 1999
541999
Thermal conductivity of glassy GeTe 4 by first-principles molecular dynamics
A Bouzid, H Zaoui, PL Palla, G Ori, M Boero, C Massobrio, F Cleri, ...
Physical Chemistry Chemical Physics 19 (15), 9729-9732, 2017
422017
Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects
E Lampin, C Krzeminski
Journal of Applied Physics 106 (6), 063519, 2009
412009
Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential
E Lampin, C Priester, C Krzeminski, L Magaud
Journal of Applied Physics 107 (10), 103514, 2010
402010
Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
B Colombeau, AJ Smith, NEB Cowern, BJ Pawlak, F Cristiano, R Duffy, ...
MRS Online Proceedings Library Archive 810, 2004
382004
Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment
C Krzeminski, G Larrieu, J Penaud, E Lampin, E Dubois
Journal of applied physics 101 (6), 064908, 2007
332007
Atomic-scale structure of the glassy phase change material: A quantitative assessment via first-principles molecular dynamics
A Bouzid, G Ori, M Boero, E Lampin, C Massobrio
Physical Review B 96 (22), 224204, 2017
322017
Frequency-dependent hopping conductivity between silicon nanocrystallites: Application to porous silicon
E Lampin, C Delerue, M Lannoo, G Allan
Physical Review B 58 (18), 12044, 1998
281998
Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects
E Lampin, F Cristiano, Y Lamrani, A Claverie, B Colombeau, NEB Cowern
Journal of applied physics 94 (12), 7520-7525, 2003
252003
On the occurrence of size effects in the calculation of thermal conductivity by first-principles molecular dynamics: The case of glassy GeTe4
E Martin, PL Palla, F Cleri, A Bouzid, G Ori, S Le Roux, M Boero, ...
Journal of Non-Crystalline Solids 498, 190-193, 2018
222018
Thermal conductivity of amorphous SiO2 by first-principles molecular dynamics
E Martin, G Ori, TQ Duong, M Boero, C Massobrio
Journal of Non-Crystalline Solids 581, 121434, 2022
212022
Influence of amorphous layers on the thermal conductivity of phononic crystals
KT M Verdier, D Lacroix, S Didenki, J-F Robillard, E Lampin, T-M Bah
Physical Review B 97, 115435, 2018
202018
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