| Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate KS Im, JB Ha, KW Kim, JS Lee, DS Kim, SH Hahm, JH Lee IEEE Electron Device Letters 31 (3), 192-194, 2010 | 203 | 2010 |
| Effects of TMAH Treatment on Device Performance of Normally Off MOSFET KW Kim, SD Jung, DS Kim, HS Kang, KS Im, JJ Oh, JB Ha, JK Shin, ... IEEE electron device letters 32 (10), 1376-1378, 2011 | 194 | 2011 |
| High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013 | 128 | 2013 |
| Normally Off Single-NanoribbonMISFET KS Im, RH Kim, KW Kim, DS Kim, CS Lee, S Cristoloveanu, JH Lee IEEE Electron Device Letters 34 (1), 27-29, 2012 | 86 | 2012 |
| AlGaN/GaN FinFET with extremely broad transconductance by side-wall wet etch YW Jo, DH Son, CH Won, KS Im, JH Seo, IM Kang, JH Lee IEEE Electron Device Letters 36 (10), 1008-1010, 2015 | 85 | 2015 |
| Heterojunction-free GaN nanochannel FinFETs with high performance KS Im, YW Jo, JH Lee, S Cristoloveanu, JH Lee IEEE electron device letters 34 (3), 381-383, 2013 | 72 | 2013 |
| Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach KS Im, V Sindhuri, YW Jo, DH Son, JH Lee, S Cristoloveanu, JH Lee Applied Physics Express 8 (6), 066501, 2015 | 54 | 2015 |
| AlGaN/GaN-based lateral-type Schottky barrier diode with very low reverse recovery charge at high temperature JH Lee, C Park, KS Im, JH Lee IEEE transactions on electron devices 60 (10), 3032-3039, 2013 | 47 | 2013 |
| Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET S Vodapally, CG Theodorou, Y Bae, G Ghibaudo, S Cristoloveanu, KS Im, ... IEEE Transactions on Electron Devices 64 (9), 3634-3638, 2017 | 44 | 2017 |
| Characteristics of GaN and AlGaN/GaN FinFETs KS Im, HS Kang, JH Lee, SJ Chang, S Cristoloveanu, M Bawedin, JH Lee Solid-state electronics 97, 66-75, 2014 | 43 | 2014 |
| Low voltage operation of GaN vertical nanowire MOSFET DH Son, YW Jo, JH Seo, CH Won, KS Im, YS Lee, HS Jang, DH Kim, ... Solid-State Electronics 145, 1-7, 2018 | 42 | 2018 |
| Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach KS Im, CH Won, S Vodapally, R Caulmilone, S Cristoloveanu, YT Kim, ... Applied Physics Letters 109 (14), 2016 | 38 | 2016 |
| Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer KS Im, CH Won, S Vodapally, DH Son, YW Jo, YH Park, JH Lee, JH Lee Journal of Crystal Growth 441, 41-45, 2016 | 34 | 2016 |
| Normally-off AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistor with recessed gate and p-GaN back-barrier DS Kim, KS Im, HS Kang, KW Kim, SB Bae, JK Mun, ES Nam, JH Lee Japanese Journal of Applied Physics 51 (3R), 034101, 2012 | 32 | 2012 |
| 1/f-noise in AlGaN/GaN nanowire omega-FinFETs S Vodapally, YI Jang, IM Kang, IT Cho, JH Lee, Y Bae, G Ghibaudo, ... IEEE Electron Device Letters 38 (2), 252-254, 2016 | 31 | 2016 |
| Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs KW Kim, SD Jung, DS Kim, KS Im, HS Kang, JH Lee, Y Bae, DH Kwon, ... Microelectronic engineering 88 (7), 1225-1227, 2011 | 28 | 2011 |
| Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET DH Son, YW Jo, V Sindhuri, KS Im, JH Seo, YT Kim, IM Kang, ... Microelectronic Engineering 147, 155-158, 2015 | 27 | 2015 |
| Low-frequency noise characteristics of GaN nanowire gate-all-around transistors with/without 2-DEG channel KS Im, MSP Reddy, R Caulmilone, CG Theodorou, G Ghibaudo, ... IEEE Transactions on Electron Devices 66 (3), 1243-1248, 2019 | 25 | 2019 |
| Effect of gate structure on the trapping behavior of GaN junctionless FinFETs KS Im, SJ An, CG Theodorou, G Ghibaudo, S Cristoloveanu, JH Lee IEEE Electron Device Letters 41 (6), 832-835, 2020 | 22 | 2020 |
| Growth of high quality GaN on Si (111) substrate by using two-step growth method for vertical power devices application JH Lee, KS Im Crystals 11 (3), 234, 2021 | 21 | 2021 |
Cristoloveanu, SorinGrenoble INPVerified email at grenoble-inp.fr
