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Federico Iori
Federico Iori
Air Liquide R&D
Verified email at airliquide.com
Title
Cited by
Cited by
Year
Simultaneously B-and P-doped silicon nanoclusters: Formation energies and electronic properties
S Ossicini, E Degoli, F Iori, E Luppi, R Magri, G Cantele, F Trani, D Ninno
Applied Physics Letters 87 (17), 2005
1202005
Engineering silicon nanocrystals: theoretical study of the effect of codoping with boron and phosphorus
F Iori, E Degoli, R Magri, I Marri, G Cantele, D Ninno, F Trani, O Pulci, ...
Physical Review B 76 (8), 085302, 2007
1022007
Role of nonlocal exchange in the electronic structure of correlated oxides
F Iori, M Gatti, A Rubio
Physical Review B 85 (11), 115129, 2012
842012
Excitons in silicon nanocrystallites: The nature of luminescence
E Luppi, F Iori, R Magri, O Pulci, S Ossicini, E Degoli, V Olevano
Physical Review B 75 (3), 033303, 2007
752007
Valence-band electronic structure of : Identification of V and O bands
E Papalazarou, M Gatti, M Marsi, V Brouet, F Iori, L Reining, E Annese, ...
Physical Review B 80 (15), 155115, 2009
432009
Understanding doping in silicon nanostructures
S Ossicini, F Iori, E Degoli, E Luppi, R Magri, R Poli, G Cantele, F Trani, ...
IEEE Journal of selected topics in quantum electronics 12 (6), 1585-1591, 2006
422006
Doping in silicon nanocrystals: an ab initio study of the structural, electronic and optical properties
F Iori, E Degoli, E Luppi, R Magri, I Marri, G Cantele, D Ninno, F Trani, ...
Journal of Luminescence 121 (2), 335-339, 2006
412006
Effects of simultaneous doping with boron and phosphorous on the structural, electronic and optical properties of silicon nanostructures
F Iori, S Ossicini
Physica E: Low-dimensional Systems and Nanostructures 41 (6), 939-946, 2009
402009
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures
E Degoli, R Guerra, F Iori, R Magri, I Marri, O Pulci, O Bisi, S Ossicini
Comptes Rendus Physique 10 (6), 575-586, 2009
292009
Novel optoelectronic properties of simultaneously n-and p-doped silicon nanostructures
F Iori, E Degoli, M Palummo, S Ossicini
Superlattices and Microstructures 44 (4-5), 337-347, 2008
282008
First-principles study of silicon nanocrystals: structural and electronic properties, absorption, emission, and doping
S Ossicini, O Bisi, E Degoli, I Marri, F Iori, E Luppi, R Magri, R Poli, ...
Journal of Nanoscience and Nanotechnology 8 (2), 479-492, 2008
242008
Giant excitonic exchange splitting in Si nanowires: first-principles calculations
M Palummo, F Iori, R Del Sole, S Ossicini
Physical Review B 81 (12), 121303, 2010
222010
Low-energy excitations in strongly correlated materials: A theoretical and experimental study of the dynamic structure factor in VO
F Iori, F Rodolakis, M Gatti, L Reining, M Upton, Y Shvyd'Ko, JP Rueff, ...
Physical Review B 86 (20), 205132, 2012
172012
Doping in silicon nanocrystals
S Ossicini, E Degoli, F Iori, O Pulci, G Cantele, R Magri, O Bisi, F Trani, ...
Surface science 601 (13), 2724-2729, 2007
162007
Structural and electronic properties of Si1− xGex alloy nanowires
F Iori, S Ossicini, R Rurali
Journal of Applied Physics 116 (15), 2014
132014
Doping in silicon nanostructures
F Iori, S Ossicini, E Degoli, E Luppi, R Poli, R Magri, G Cantele, F Trani, ...
physica status solidi (a) 204 (5), 1312-1317, 2007
122007
Bismuth iron garnet: Ab initio study of electronic properties
F Iori, A Teurtrie, L Bocher, E Popova, N Keller, O StÚphan, A Gloter
Physical Review B 100 (24), 245150, 2019
112019
Conductance fluctuations in Si nanowires studied from first-principles
F Iori, S Ossicini, R Rurali
Journal of Applied Physics 116 (7), 2014
82014
Role of surface passivation and doping in silicon nanocrystals
R Magri, E Degoli, F Iori, E Luppi, O Pulci, S Ossicini, G Cantele, F Trani, ...
Journal of Computational Methods in Sciences and Engineering 7 (3-4), 219-232, 2007
82007
Electronic properties and dielectric response of surfaces and nanowires of silicon from ab-initio approaches
M Palummo, F Iori, R Del Sole, S Ossicini
Superlattices and Microstructures 46 (1-2), 234-239, 2009
52009
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