| Detecting network communities: a new systematic and efficient algorithm L Donetti, MA Munoz Journal of Statistical Mechanics: Theory and Experiment 2004 (10), P10012, 2004 | 670 | 2004 |
| Entangled networks, synchronization, and optimal network topology L Donetti, PI Hurtado, MA Munoz Physical Review Letters 95 (18), 188701, 2005 | 432 | 2005 |
| Trophic coherence determines food-web stability S Johnson, V Domínguez-García, L Donetti, MA Munoz Proceedings of the National Academy of Sciences 111 (50), 17923-17928, 2014 | 182 | 2014 |
| Optimal network topologies: expanders, cages, Ramanujan graphs, entangled networks and all that L Donetti, F Neri, MA Munoz Journal of Statistical Mechanics: Theory and Experiment 2006 (08), P08007, 2006 | 162 | 2006 |
| A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007 | 95 | 2007 |
| Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility L Donetti, F Gámiz, JB Roldán, A Godoy Journal of Applied Physics 100 (1), 2006 | 91 | 2006 |
| Improved spectral algorithm for the detection of network communities L Donetti, MA Muñoz arXiv preprint physics/0504059, 2005 | 90 | 2005 |
| Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro Applied physics letters 88 (12), 2006 | 47 | 2006 |
| Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz Solid-State Electronics 52 (12), 1854-1860, 2008 | 43 | 2008 |
| Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gámiz IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009 | 42 | 2009 |
| Hole effective mass in silicon inversion layers with different substrate orientations and channel directions L Donetti, F Gámiz, S Thomas, TE Whall, DR Leadley, PE Hellström, ... Journal of Applied Physics 110 (6), 2011 | 30 | 2011 |
| Network synchronization: optimal and pessimal scale-free topologies L Donetti, PI Hurtado, MA Munoz Journal of Physics A: Mathematical and Theoretical 41 (22), 224008, 2008 | 28 | 2008 |
| Simulation of hole mobility in two-dimensional systems L Donetti, F Gamiz, N Rodriguez Semiconductor science and technology 24 (3), 035016, 2009 | 26 | 2009 |
| Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization C Sampedro, F Gámiz, L Donetti, A Godoy Solid-State Electronics 70, 101-105, 2012 | 24 | 2012 |
| Hole transport in DGSOI devices: Orientation and silicon thickness effects L Donetti, F Gámiz, N Rodriguez, F Jiménez-Molinos, JB Roldán Solid-state electronics 54 (2), 191-195, 2010 | 24 | 2010 |
| Hole mobility in ultrathin double-gate SOI devices: the effect of acoustic phonon confinement L Donetti, F Gamiz, N Rodriguez, A Godoy IEEE electron device letters 30 (12), 1338-1340, 2009 | 22 | 2009 |
| A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gamiz IEEE transactions on electron devices 57 (10), 2477-2483, 2010 | 21 | 2010 |
| Lee-Yang zeros and the Ising model on the Sierpinski gasket R Burioni, D Cassi, L Donetti Journal of Physics A: Mathematical and General 32 (27), 5017, 1999 | 18 | 1999 |
| InGaAs capacitor-less DRAM cells TCAD demonstration C Navarro, S Navarro, C Marquez, L Donetti, C Sampedro, S Karg, H Riel, ... IEEE Journal of the Electron Devices Society 6, 884-892, 2018 | 17 | 2018 |
| Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors A Ohata, N Rodriguez, C Navarro, L Donetti, F Gamiz, ... Journal of Applied Physics 113 (14), 2013 | 17 | 2013 |
Francisco GamizProfessor of ElectronicsVerified email at ugr.es
