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Brenda VanMil
Brenda VanMil
US Army Research Laboratory
Verified email at army.mil
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Year
Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates
JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ...
IEEE Electron Device Letters 30 (6), 650-652, 2009
4932009
Hall effect mobility of epitaxial graphene grown on silicon carbide
JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ...
Applied Physics Letters 95 (12), 2009
2442009
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ...
Nano letters 9 (8), 2873-2876, 2009
2402009
Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm
JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ...
IEEE Electron Device Letters 31 (4), 260-262, 2010
1902010
Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production
GG Jernigan, BL VanMil, JL Tedesco, JG Tischler, ER Glaser, ...
Nano letters 9 (7), 2605-2609, 2009
1852009
Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions
RE Stahlbush, BL VanMil, RL Myers-Ward, KK Lew, DK Gaskill, CR Eddy
Applied Physics Letters 94 (4), 2009
1052009
Turning of basal plane dislocations during epitaxial growth on 4 off-axis 4H-SiC
RL Myers-Ward, BL VanMil, RE Stahlbush, SL Katz, JM McCrate, SA Kitt, ...
Materials Science Forum 615, 105-108, 2009
782009
Recombination processes controlling the carrier lifetime in n− 4H–SiC epilayers with low Z1/2 concentrations
PB Klein, R Myers-Ward, KK Lew, BL VanMil, CR Eddy, DK Gaskill, ...
Journal of Applied Physics 108 (3), 2010
732010
Basal plane dislocation reduction for 8 off-cut, 4H-SiC using in situ variable temperature growth interruptions
BL VanMil, RE Stahlbush, RL Myers-Ward, KK Lew, CR Eddy, DK Gaskill
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
552008
Epitaxial graphene growth on SiC wafers
DK Gaskill, G Jernigan, P Campbell, JL Tedesco, J Culbertson, B VanMil, ...
ECS Transactions 19 (5), 117, 2009
542009
4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm
J Hu, X Xin, X Li, JH Zhao, BL VanMil, KK Lew, RL Myers-Ward, CR Eddy, ...
IEEE transactions on electron devices 55 (8), 1977-1983, 2008
452008
Graphene formation on SiC substrates
BL VanMil, RL Myers-Ward, JL Tedesco, CR Eddy, GG Jernigan, ...
Materials science forum 615, 211-214, 2009
442009
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8
BL VanMil, KK Lew, RL Myers-Ward, RT Holm, DK Gaskill, CR Eddy Jr, ...
Journal of Crystal Growth 311 (2), 238-243, 2009
392009
Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers
SI Maximenko, JA Freitas, RL Myers-Ward, KK Lew, BL VanMil, CR Eddy, ...
Journal of applied physics 108 (1), 2010
382010
High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure
BL VanMil, H Guo, LJ Holbert, K Lee, TH Myers, T Liu, D Korakakis
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
372004
Improvement of morphology and free carrier mobility through argon-assisted growth of epitaxial graphene on silicon carbide
JL Tedesco, B VanMil, RL Myers-Ward, J Culbertson, G Jernigan, ...
ECS Transactions 19 (5), 137, 2009
362009
Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition
A Jain, X Weng, S Raghavan, BL VanMil, T Myers, JM Redwing
Journal of Applied Physics 104 (5), 2008
322008
Heavy Cr doping of ZnSe by molecular beam epitaxy
BL Vanmil, AJ Ptak, L Bai, L Wang, M Chirila, NC Giles, TH Myers, ...
Journal of electronic materials 31, 770-775, 2002
302002
Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC
MJ Tadjer, KD Hobart, JD Caldwell, JE Butler, KX Liu, CR Eddy, ...
Applied Physics Letters 91 (16), 2007
282007
Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN
TH Myers, BL VanMil, LJ Holbert, CY Peng, CD Stinespring, J Alam, ...
Journal of crystal growth 246 (3-4), 244-251, 2002
262002
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