Hiroki Kawai
Hiroki Kawai
Kioxia Corporation
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The Mechanism of Slow Hot-Hole Cooling in Lead-Iodide Perovskite: First-Principles Calculation on Carrier Lifetime from Electron–Phonon Interaction
KY Hiroki Kawai, Giacomo Giorgi, Andrea Marini
Nano Letters 15 (5), 3103, 2015
Electron-electron and electron-phonon correlation effects on the finite-temperature electronic and optical properties of zinc-blende GaN
H Kawai, K Yamashita, E Cannuccia, A Marini
Physical Review B 89 (8), 085202, 2014
Epitaxy of Solid-Solution Thin Films with Widely Tunable Chemical Composition and Strong Visible Absorption
C Yang, Y Hirose, T Wakasugi, N Kashiwa, H Kawai, K Yamashita, ...
Physical Review Applied 10 (4), 044001, 2018
Chirality dependence of quantum thermal transport in carbon nanotubes at low temperatures: A first-principles study
T Hata, H Kawai, T Ohto, K Yamashita
The Journal of chemical physics 139 (4), 2013
Impact of short‐range order and clusterization on the bandgap bowing: First‐principles calculations on the electronic properties of metastable (GaAs) 1–x (Ge2) x alloys
H Kawai, G Giorgi, K Yamashita
physica status solidi (b) 249 (1), 29-37, 2012
High thermal stability of doped oxide semiconductor for monolithic 3D integration
H Kawai, J Kataoka, N Saito, T Ueda, T Ishihara, K Ikeda
MRS Bulletin 46 (11), 1044-1052, 2021
Multi-wall effects on the thermal transport properties of nanotube structures
Tomoyuki Hata, Hiroki Kawai, Ryota Jono, Koichi Yamashita
Nanotechnology 25 (24), 245703, 2014
Nonisovalent alloys for photovoltaics applications: modelling IV-Doped III-V alloys
G Giorgi, H Kawai, K Yamashita
Third Gener-ation Photovoltaics, InTech, 141e166, 2012
Application of accelerated long-range corrected exchange functional [LC-DFT (2Gau)] to periodic boundary condition systems: CO adsorption on Cu (111) surface
K Mishima, M Kaneko, JW Song, H Kawai, K Yamashita, K Hirao
The Journal of Chemical Physics 152 (10), 2020
Selector and non-volatile storage device
T Nagase, D Watanabe, Y Kobayashi, H Tokuhira, H Kawai
US Patent 11,600,773, 2023
Design principle of channel material for oxide-semiconductor field-effect transistor with high thermal stability and high on-current by fluorine doping
H Kawai, H Fujiwara, J Kataoka, N Saito, T Ueda, T Enda, T Ishihara, ...
2020 IEEE International Electron Devices Meeting (IEDM), 22.2. 1-22.2. 4, 2020
Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface
H Kawai, Y Nakasaki, T Kanemura, T Ishihara
Journal of Applied Physics 123 (16), 2018
Clustering and Octet Rule Violation Impact on Band Gap Bowing: Ab Initio Calculation of the Electronic Properties of (GaAs)1−x(Ge2)x Alloys
H Kawai, G Giorgi, K Yamashita
Chemistry letters 40 (7), 770-772, 2011
Semiconductor memory device with a phase change layer and particular heater material
K Komatsu, T Iwasaki, T Daibou, H Kawai
US Patent 11,678,593, 2023
Semiconductor storage device
J Zhang, K Komatsu, T Daibou, T Iwasaki, H Tokuhira, H Kawai, ...
US Patent App. 17/687,130, 2023
Resistance change device and storage device
H Kawai, K Yasuda, H Tokuhira, K Katono, A Gawase, K Komatsu, ...
US Patent App. 17/687,944, 2023
Semiconductor device and semiconductor storage device
T Kosaka, H Horii, H Tokuhira, K Matsuzawa, H Kawai
US Patent App. 17/681,853, 2023
Resistance variable device with chalcogen-containing layer
H Kawai, K Komatsu, T Daibou, H Tokuhira, M Yoshikawa, Y Ito
US Patent 11,600,772, 2023
Semiconductor device
H Kawai, J Kataoka, K Ikeda
US Patent 11,569,241, 2023
Variable resistance element
H Kawai, D Watanabe, T Nagase
US Patent 11,424,290, 2022
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