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Stephen O'Leary
Stephen O'Leary
University of British Columbia
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Year
Transient electron transport in wurtzite GaN, InN, and AlN
BE Foutz, SK O’Leary, MS Shur, LF Eastman
Journal of applied physics 85 (11), 7727-7734, 1999
6781999
The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis
SK O’Leary, SR Johnson, PK Lim
Journal of applied physics 82 (7), 3334-3340, 1997
3911997
Electron transport in wurtzite indium nitride
SK O’Leary, BE Foutz, MS Shur, UV Bhapkar, LF Eastman
Journal of Applied Physics 83 (2), 826-829, 1998
3901998
Steady-state and transient electron transport within the III–V nitride semiconductors, GaN, AlN, and InN: a review
SK O'leary, BE Foutz, MS Shur, LF Eastman
Journal of Materials Science: Materials in Electronics 17, 87-126, 2006
1692006
Potential performance of indium-nitride-based devices
SK O’Leary, BE Foutz, MS Shur, LF Eastman
Applied physics letters 88 (15), 2006
1112006
Monte Carlo simulation of electron transport in wurtzite aluminum nitride
SK O'Leary, BE Foutz, MS Shur, UV Bhapkar, LF Eastman
Solid state communications 105 (10), 621-626, 1998
1061998
Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
SK O’Leary, BE Foutz, MS Shur, LF Eastman
Applied Physics Letters 87 (22), 2005
1052005
Disorder and optical absorption in amorphous silicon and amorphous germanium
SK O'Leary, S Zukotynski, JM Perz
Journal of non-crystalline solids 210 (2-3), 249-253, 1997
951997
The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature†…
TM Mok, SK O’Leary
Journal of Applied Physics 102 (11), 2007
932007
Auger-limited carrier recombination and relaxation in CdSe colloidal quantum wells
E Baghani, SK O’Leary, I Fedin, DV Talapin, M Pelton
The journal of physical chemistry letters 6 (6), 1032-1036, 2015
922015
On determining the optical gap associated with an amorphous semiconductor: A generalization of the Tauc model
SK O'Leary, PK Lim
Solid State Communications 104 (1), 17-21, 1997
821997
Optical absorption in amorphous semiconductors
SK O’Leary, S Zukotynski, JM Perz
Physical Review B 52 (11), 7795, 1995
671995
Semiclassical density-of-states and optical-absorption analysis of amorphous semiconductors
SK O’Leary, S Zukotynski, JM Perz
Physical Review B 51 (7), 4143, 1995
661995
Nonmonotonic dependence of Auger recombination rate on shell thickness for CdSe/CdS core/shell nanoplatelets
M Pelton, JJ Andrews, I Fedin, DV Talapin, H Leng, SK O’Leary
Nano Letters 17 (11), 6900-6906, 2017
632017
The Urbach focus and hydrogenated amorphous silicon
F Orapunt, SK O’Leary
Applied physics letters 84 (4), 523-525, 2004
512004
Recombination of drifting holes with trapped electrons in stabilized a-Se photoconductors: Langevin recombination
SO Kasap, B Fogal, M Zahangir Kabir, RE Johanson, SK O’Leary
Applied physics letters 84 (11), 1991-1993, 2004
502004
On defining the optical gap of an amorphous semiconductor: an empirical calibration for the case of hydrogenated amorphous silicon
DE Sweenor, SK O’Leary, BE Foutz
Solid state communications 110 (5), 281-286, 1999
491999
Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review
WA Hadi, MS Shur, SK O’Leary
Journal of Materials Science: Materials in Electronics 25, 4675-4713, 2014
472014
Optical absorption, disorder, and the disorderless limit in amorphous semiconductors
SK O’Leary
Applied Physics Letters 72 (11), 1332-1334, 1998
461998
Disorder and the optical properties of amorphous silicon grown by molecular beam epitaxy
BJ Fogal, SK O'Leary, DJ Lockwood, JM Baribeau, M NoŽl, JC Zwinkels
Solid state communications 120 (11), 429-434, 2001
442001
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