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Assaf Lahav
Assaf Lahav
Gpixel
Dirección de correo verificada de gpixel.com - Página principal
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Color pattern and pixel level binning for aps image sensor using 2× 2 photodiode sharing scheme
A Lahav, D Cohen
US Patent 7,773,138, 2010
1202010
High performance silicon imaging: fundamentals and applications of cmos and ccd sensors
D Durini
Woodhead Publishing, 2019
802019
Kirana: a solid-state megapixel uCMOS image sensor for ultrahigh speed imaging
J Crooks, B Marsh, R Turchetta, K Taylor, W Chan, A Lahav, A Fenigstein
Sensors, cameras, and systems for industrial and scientific applications XIV …, 2013
782013
Three-dimensional control-gate architecture for single poly EPROM memory devices fabricated in planar CMOS technology
A Fenigstein, Z Kuritsky, A Lahav, I Naot, Y Roizin
US Patent 7,671,396, 2010
64*2010
CMOS image sensor with high sensitivity wide dynamic range pixel for high resolution applications
A Lahav, A Fenigstein
US Patent 8,089,035, 2012
402012
Non-thermal electromagnetic radiation damage to lens epithelium
E Bormusov, UP Andley, N Sharon, L Schächter, A Lahav, A Dovrat
The open ophthalmology journal 2, 102, 2008
382008
Localized effects of microwave radiation on the intact eye lens in culture conditions
A Dovrat, R Berenson, E Bormusov, A Lahav, T Lustman, N Sharon, ...
Bioelectromagnetics: Journal of the Bioelectromagnetics Society, The Society …, 2005
382005
CMOS image sensor with wide (intra-scene) dynamic range
A Lahav, A Fenigstein
US Patent 8,279,328, 2012
342012
Large-format medical X-ray CMOS image sensor for high resolution high frame rate applications
R Reshef, T Leitner, S Alfassi, E Sarig, N Golan, O Berman, A Fenigstein, ...
Proc. Int. Image Sens. Workshop, 1-4, 2009
312009
Optimization of random telegraph noise non uniformity in a CMOS pixel with a pinned-photodiode
A Lahav, D Veinger, A Fenigstein, A Shiwalkar
Proc. Int. Image Sens. Workshop, 230-234, 2007
302007
Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors
A Lahav, A Fenigstein, A Strum, S Rizzolo
High Performance Silicon Imaging, 95-117, 2020
222020
High performance 2.5 um global shutter pixel with new designed light-pipe structure
T Yokoyama, M Tsutsui, Y Nishi, I Mizuno, V Dmitry, A Lahav
2018 IEEE International Electron Devices Meeting (IEDM), 10.5. 1-10.5. 4, 2018
222018
Image sensor pixel with memory node having buried channel and diode portions
A Lahav, A Fenigstein, Y Roizin, A Strum
US Patent 9,729,810, 2017
212017
Image sensor pixel with memory node having buried channel and diode portions formed on N-type substrate
A Lahav, A Fenigstein, Y Roizin, A Strum
US Patent 9,865,632, 2018
192018
A 4e-noise 2/3-inch global shutter 1920x1080P120 CMOS-Imager
P Centen, S Lehr, S Roth, J Rotte, F Heizmann, A Momin, R Dohmen, ...
Proc. of IISW, 409-412, 2013
192013
Shared readout low noise global shutter image sensor method
A Lahav, A Fenigstein
US Patent 9,210,345, 2015
182015
Ultra-high speed imaging at megaframes per second with a megapixel CMOS image sensor
J Crooks, B Marsh, R Turchetta, K Taylor, W Chan, A Lahav, A Fenigstein
International Image Sensor Workshop, 4-7, 2013
182013
Enhanced X-ray CMOS sensor panel for radio and fluoro application using a low noise charge amplifier wixel with a Partially Pinned PD
A Lahav, R Reshef, A Fenigstein
Proc. Int. Image Sensor Workshop (IISW), 1-4, 2011
172011
A high-performance 2.5 μm charge domain global shutter pixel and near infrared enhancement with light pipe technology
I Mizuno, M Tsutsui, T Yokoyama, T Hirata, Y Nishi, D Veinger, A Birman, ...
Sensors 20 (1), 307, 2020
152020
CMOS image sensor 3T Nwell photodiode pixel SPICE model
T Reiner, B Mishori, T Leitner, A Horovitz, Y Vainbaum, M Hakim, A Lahav, ...
2004 23rd IEEE Convention of Electrical and Electronics Engineers in Israel …, 2004
152004
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Artículos 1–20