Seguir
Yingchun Cheng
Yingchun Cheng
Nanjing Tech University; University of Illinois Chicago; KAUST; Nanjing University
Dirección de correo verificada de njtech.edu.cn - Página principal
Título
Citado por
Citado por
Año
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
ZY Zhu, YC Cheng, U Schwingenschlögl
Physical Review B—Condensed Matter and Materials Physics 84 (15), 153402, 2011
19532011
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3
C Cui, WJ Hu, X Yan, C Addiego, W Gao, Y Wang, Z Wang, L Li, Y Cheng, ...
Nano letters 18 (2), 1253-1258, 2018
6562018
Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS systems
YC Cheng, ZY Zhu, WB Mi, ZB Guo, U Schwingenschlögl
Physical Review B—Condensed Matter and Materials Physics 87 (10), 100401, 2013
6482013
Doping monolayer graphene with single atom substitutions
H Wang, Q Wang, Y Cheng, K Li, Y Yao, Q Zhang, C Dong, P Wang, ...
Nano letters 12 (1), 141-144, 2012
6272012
Borophene as an extremely high capacity electrode material for Li-ion and Na-ion batteries
X Zhang, J Hu, Y Cheng, HY Yang, Y Yao, SA Yang
Nanoscale 8, 15340, 2016
4812016
Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field
C Zhao, T Norden, P Zhang, P Zhao, Y Cheng, F Sun, JP Parry, P Taheri, ...
Nature Nanotechnology, 2017
4472017
Spin-orbit–induced spin splittings in polar transition metal dichalcogenide monolayers
YC Cheng, ZY Zhu, M Tahir, U Schwingenschlögl
Europhysics Letters 102 (5), 57001, 2013
4222013
Valley polarization in magnetically doped single-layer transition-metal dichalcogenides
YC Cheng, QY Zhang, U Schwingenschlögl
Physical Review B 89 (15), 155429, 2014
3542014
Recent progress of Janus 2D transition metal chalcogenides: from theory to experiments
R Li, Y Cheng, W Huang
Small 14 (45), 1802091, 2018
3362018
Raman scattering study of zinc blende and wurtzite ZnS
YC Cheng, CQ Jin, F Gao, XL Wu, W Zhong, SH Li, PK Chu
Journal of Applied Physics 106 (12), 2009
3342009
Large Spin‐Valley Polarization in Monolayer MoTe2 on Top of EuO (111)
Q Zhang, SA Yang, W Mi, Y Cheng, U Schwingenschlögl
Advanced Materials, 2015
2992015
Efficient and High-Color-Purity Light-Emitting Diodes Based on In Situ Grown Films of CsPbX3 (X = Br, I) Nanoplates with Controlled Thicknesses
J Si, Y Liu, Z He, H Du, K Du, D Chen, J Li, M Xu, H Tian, H He, D Di, ...
ACS nano 11 (11), 11100-11107, 2017
2062017
Highly crystallized α-FeOOH for a stable and efficient oxygen evolution reaction
W Luo, C Jiang, Y Li, SA Shevlin, X Han, K Qiu, Y Cheng, Z Guo, ...
Journal of Materials Chemistry A 5 (5), 2021-2028, 2017
1702017
Band inversion mechanism in topological insulators: A guideline for materials design
Z Zhu, Y Cheng, U Schwingenschlögl
Physical Review B—Condensed Matter and Materials Physics 85 (23), 235401, 2012
1552012
Photovoltaic heterojunctions of fullerenes with MoS2 and WS2 monolayers
LY Gan, Q Zhang, Y Cheng*, U Schwingenschlögl*
The journal of physical chemistry letters 5 (8), 1445-1449, 2014
1532014
Atomic-Scale Observation of Lithiation Reaction Front in Nanoscale SnO2 Materials
A Nie, LY Gan, Y Cheng, H Asayesh-Ardakani, Q Li, C Dong, R Tao, ...
Acs Nano 7 (7), 6203-6211, 2013
1472013
Effects of strain on electronic and optic properties of holey two-dimensional C2N crystals
S Guan, Y Cheng, C Liu, J Han, Y Lu, SA Yang, Y Yao
Applied Physics Letters 107 (23), 231904, 2015
1432015
Hole doped Dirac states in silicene by biaxial tensile strain
TP Kaloni, YC Cheng, U Schwingenschlögl
Journal of Applied Physics 113 (10), 2013
1382013
Topological phase transition in layered GaS and GaSe
Z Zhu, Y Cheng, U Schwingenschlögl
Physical review letters 108 (26), 266805, 2012
1362012
Intrinsic point defects in inorganic perovskite CsPbI3 from first-principles prediction
Y Li, C Zhang, X Zhang, D Huang, Q Shen, Y Cheng*, W Huang
Applied Physics Letters 111 (16), 162106, 2017
1332017
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20