| Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices B Jun, RM Diestelhorst, M Bellini, G Espinel, A Appaswamy, APG Prakash, ... IEEE transactions on nuclear science 53 (6), 3203-3209, 2006 | 33 | 2006 |
| A novel device architecture for SEU mitigation: The inverse-mode cascode SiGe HBT SD Phillips, T Thrivikraman, A Appaswamy, AK Sutton, JD Cressler, ... IEEE transactions on Nuclear Science 56 (6), 3393-3401, 2009 | 31 | 2009 |
| A new current-sweep method for assessing the mixed-mode damage spectrum of SiGe HBTs P Cheng, C Zhu, A Appaswamy, JD Cressler IEEE Transactions on Device and Materials Reliability 7 (3), 479-487, 2007 | 27 | 2007 |
| The effects of proton and X-ray irradiation on the DC and AC performance of complementary (npn+ pnp) SiGe HBTs on thick-film SOI M Bellini, B Jun, AK Sutton, AC Appaswamy, P Cheng, JD Cressler, ... IEEE Transactions on Nuclear Science 54 (6), 2245-2250, 2007 | 26 | 2007 |
| Impact of scaling on the inverse-mode operation of SiGe HBTs A Appaswamy, M Bellini, WML Kuo, P Cheng, J Yuan, C Zhu, JD Cressler, ... IEEE transactions on electron devices 54 (6), 1492-1501, 2007 | 26 | 2007 |
| Overshoot-induced failures in forward-biased diodes: A new challenge to high-speed ESD design F Farbiz, A Appaswamy, AA Salman, G Boselli 2013 IEEE International Reliability Physics Symposium (IRPS), 2B. 1.1-2B. 1.8, 2013 | 24 | 2013 |
| Optimizing Inverse-Mode SiGe HBTs for Immunity to Heavy-Ion-Induced Single-Event Upset A Appaswamy, S Phillips, JD Cressler IEEE electron device letters 30 (5), 511-513, 2009 | 24 | 2009 |
| Drain extended mos transistor having selectively silicided drain AA Salman, F Farbiz, AC Appaswamy, JE Kunz, G Boselli US Patent App. 13/441,318, 2013 | 23 | 2013 |
| Understanding radiation-and hot carrier-induced damage processes in SiGe HBTs using mixed-mode electrical stress P Cheng, B Jun, A Sutton, A Appaswamy, C Zhu, JD Cressler, ... IEEE Transactions on Nuclear Science 54 (6), 1938-1945, 2007 | 20 | 2007 |
| Influence of interface traps on the temperature sensitivity of MOSFET drain-current variations A Appaswamy, P Chakraborty, JD Cressler IEEE Electron Device Letters 31 (5), 387-389, 2010 | 19 | 2010 |
| ESD protection circuit with stacked ESD cells having parallel active shunt JE Kunz, F Farbiz, AC Appaswamy, AA Salman US Patent 10,026,712, 2018 | 17 | 2018 |
| Junction isolation single event radiation hardening of a 200 GHz SiGe: C HBT technology without deep trench isolation RM Diestelhorst, SD Phillips, A Appaswamy, AK Sutton, JD Cressler, ... IEEE Transactions on Nuclear Science 56 (6), 3402-3407, 2009 | 16 | 2009 |
| Engineering optimal high current characteristics of high voltage DENMOS AA Salman, F Farbiz, A Appaswamy, H Kunz, G Boselli, M Dissegna 2012 IEEE International Reliability Physics Symposium (IRPS), 3E. 1.1-3E. 1.6, 2012 | 15 | 2012 |
| Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environments SD Phillips, AK Sutton, A Appaswamy, M Bellini, JD Cressler, A Grillo, ... 2009 IEEE International Reliability Physics Symposium, 157-164, 2009 | 15 | 2009 |
| The effects of proton irradiation on 90 nm strained Si CMOS on SOI devices A Appaswamy, B Jun, RM Diestelhorst, G Espinel, APG Prakash, ... 2006 IEEE Radiation Effects Data Workshop, 62-65, 2006 | 15 | 2006 |
| Operation of inverse mode silicon-germanium HBTs and ultra-scaled CMOS devices in extreme environments A Appaswamy Georgia Institute of Technology, 2010 | 13* | 2010 |
| Mixed-mode stress degradation mechanisms in pnp SiGe HBTs PS Chakraborty, AC Appaswamy, PK Saha, NK Jha, JD Cressler, ... 2009 IEEE International Reliability Physics Symposium, 83-88, 2009 | 12 | 2009 |
| Modeling mixed-mode DC and RF stress in SiGe HBT power amplifiers P Cheng, CM Grens, A Appaswamy, PS Chakraborty, JD Cressler 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 133-136, 2008 | 12 | 2008 |
| Novel area-efficient techniques for improving ESD performance of Drain extended transistors A Appaswamy, F Farbiz, A Salman 2014 IEEE International Reliability Physics Symposium, 4C. 1.1-4C. 1.7, 2014 | 11 | 2014 |
| Cryogenic matching performance of 90 nm MOSFETs A Appaswamy, P Chakraborty, JD Cressler 2009 International Semiconductor Device Research Symposium, 1-2, 2009 | 10 | 2009 |
