Andrew D. Koehler
Andrew D. Koehler
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Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Diamond on III-nitride device
FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart
US Patent 10,002,958, 2018
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster
ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric
MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ...
ECS Journal of Solid State Science and Technology 5 (9), P468, 2016
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE Electron Device Letters 35 (8), 826-828, 2014
III-nitride P-channel field effect transistor with hole carriers in the channel
FJ Kub, TJ Anderson, AD Koehler, KD Hobart
US Patent 9,006,791, 2015
On the radiation tolerance of AlGaN/GaN HEMTs
BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ...
ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016
GaN-On-Diamond HEMT Technology With TAVG = 176C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging
MJ Tadjer, TJ Anderson, MG Ancona, PE Raad, P Komarov, T Bai, ...
IEEE Electron Device Letters 40 (6), 881-884, 2019
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ...
Chemistry of Materials 32 (3), 1140-1152, 2020
Effect of reduced extended defect density in MOCVD grown AlGaN/GaN HEMTs on native GaN substrates
TJ Anderson, MJ Tadjer, JK Hite, JD Greenlee, AD Koehler, KD Hobart, ...
IEEE Electron Device Letters 37 (1), 28-30, 2015
Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ...
Electron Device Letters, IEEE 34 (9), 1115-1117, 2013
Electrical characterization of ALD HfO2 high-k dielectrics on (2 01) β-Ga2O3
DI Shahin, MJ Tadjer, VD Wheeler, AD Koehler, TJ Anderson, CR Eddy, ...
Applied Physics Letters 112 (4), 2018
Nanocrystalline diamond integration with III-nitride HEMTs
TJ Anderson, KD Hobart, MJ Tadjer, AD Koehler, EA Imhoff, JK Hite, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3036, 2016
Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs
JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ...
Applied physics letters 107 (8), 2015
Vertical GaN junction barrier Schottky diodes
AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ...
ECS Journal of Solid State Science and Technology 6 (1), Q10, 2016
Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition
TJ Anderson, VD Wheeler, DI Shahin, MJ Tadjer, AD Koehler, KD Hobart, ...
Applied Physics Express 9 (7), 071003, 2016
Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications
MJ Tadjer, NA Mahadik, JA Freitas Jr, ER Glaser, AD Koehler, LE Luna, ...
Gallium Nitride Materials and Devices XIII 10532, 56-61, 2018
Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs
AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ...
IEEE Electron Device Letters 35 (12), 1194-1196, 2014
Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors
DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
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