Travis J. Anderson
Travis J. Anderson
Verified email at
Cited by
Cited by
Diamond on III-nitride device
FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart
US Patent App. 15/617,982, 2018
Diamond on III-nitride device
FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart
US Patent 10,002,958, 2018
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
Film on Graphene on a Substrate and Method and Devices Therefor
F Kub, T Anderson, M Mastro
US Patent App. 13/310,347, 2012
Quantifying pulsed laser induced damage to graphene
M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ...
Applied Physics Letters 99 (21), 211909, 2011
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE Electron Device Letters 33 (1), 23-25, 2011
Room temperature hydrogen detection using Pd-coated GaN nanowires
W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 072109, 2008
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ...
Journal of Crystal Growth 350 (1), 21-26, 2012
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
J Anaya, S Rossi, M Alomari, E Kohn, L Tóth, B Pécz, KD Hobart, ...
Acta Materialia 103, 141-152, 2016
Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices
T Anderson, F Ren, S Pearton, BS Kang, HT Wang, CY Chang, J Lin
Sensors 9 (6), 4669-4694, 2009
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics Letters 50 (3), 197-198, 2014
Graphene on Semiconductor Detector
FJ Kub, T Anderson, KD Hobart
US Patent 20,130,082,241, 2013
Graphene on semiconductor detector
FJ Kub, T Anderson, KD Hobart
US Patent 8,872,159, 2014
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE Electron Device Lett. 35 (8), 826-828, 2014
III-nitride P-channel field effect transistor with hole carriers in the channel
FJ Kub, TJ Anderson, AD Koehler, KD Hobart
US Patent 9,006,791, 2015
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
JD Caldwell, KD Hobart, T Anderson, FJ Kub
US Patent 8,753,468, 2014
Transistor with enhanced channel charge inducing material layer and threshold voltage control
FJ Kub, KD Hobart, CR Eddy Jr, MA Mastro, T Anderson
US Patent 8,384,129, 2013
On the radiation tolerance of AlGaN/GaN HEMTs
BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ...
ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016
Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor
X Yu, C Li, Z Low, J Lin, TJ Anderson, HT Wang, F Ren, YL Wang, ...
ECS Transactions 16 (7), 127-137, 2008
The system can't perform the operation now. Try again later.
Articles 1–20