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Travis J. Anderson
Travis J. Anderson
Verified email at che.ufl.edu
Title
Cited by
Cited by
Year
Diamond on III-nitride device
FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart
US Patent App. 15/617,982, 2018
3702018
Diamond on III-nitride device
FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart
US Patent 10,002,958, 2018
3702018
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2842010
Film on Graphene on a Substrate and Method and Devices Therefor
F Kub, T Anderson, M Mastro
US Patent App. 13/310,347, 2012
1872012
Quantifying pulsed laser induced damage to graphene
M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ...
Applied Physics Letters 99 (21), 211909, 2011
1832011
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
1692017
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE Electron Device Letters 33 (1), 23-25, 2011
1562011
Room temperature hydrogen detection using Pd-coated GaN nanowires
W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 072109, 2008
1362008
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ...
Journal of Crystal Growth 350 (1), 21-26, 2012
1342012
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
J Anaya, S Rossi, M Alomari, E Kohn, L Tóth, B Pécz, KD Hobart, ...
Acta Materialia 103, 141-152, 2016
1292016
Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices
T Anderson, F Ren, S Pearton, BS Kang, HT Wang, CY Chang, J Lin
Sensors 9 (6), 4669-4694, 2009
1152009
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics Letters 50 (3), 197-198, 2014
1132014
Graphene on Semiconductor Detector
FJ Kub, T Anderson, KD Hobart
US Patent 20,130,082,241, 2013
972013
Graphene on semiconductor detector
FJ Kub, T Anderson, KD Hobart
US Patent 8,872,159, 2014
952014
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE Electron Device Lett. 35 (8), 826-828, 2014
932014
III-nitride P-channel field effect transistor with hole carriers in the channel
FJ Kub, TJ Anderson, AD Koehler, KD Hobart
US Patent 9,006,791, 2015
902015
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
JD Caldwell, KD Hobart, T Anderson, FJ Kub
US Patent 8,753,468, 2014
892014
Transistor with enhanced channel charge inducing material layer and threshold voltage control
FJ Kub, KD Hobart, CR Eddy Jr, MA Mastro, T Anderson
US Patent 8,384,129, 2013
862013
On the radiation tolerance of AlGaN/GaN HEMTs
BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ...
ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016
852016
Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor
X Yu, C Li, Z Low, J Lin, TJ Anderson, HT Wang, F Ren, YL Wang, ...
ECS Transactions 16 (7), 127-137, 2008
81*2008
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Articles 1–20