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Ionut Radu
Ionut Radu
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Title
Cited by
Cited by
Year
Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
M Sadaka, I Radu
US Patent 8,461,017, 2013
2582013
Recent Developments of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking
I Radu, D Landru, G Gaudin, G Riou, C Tempesta, F Letertre, L Di Cioccio, ...
2010 IEEE International 3D Systems Integration Conference (3DIC), 1-6, 2010
2322010
Direct bonding for wafer level 3D integration
L Di Cioccio, I Radu, P Gueguen, M Sadaka
2010 IEEE International Conference on Integrated Circuit Design and …, 2010
2232010
Method for curing defects in a semiconductor layer
I Radu, C Gourdel, C Vetizou
US Patent 8,993,461, 2015
1712015
Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods
M Sadaka, I Radu, D Landru
US Patent 8,716,105, 2014
1452014
Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods
M Sadaka, I Radu, D Landru, L Di Cioccio
US Patent 8,501,537, 2013
1222013
An overview of patterned metal/dielectric surface bonding: mechanism, alignment and characterization
L Di Cioccio, P Gueguen, R Taibi, D Landru, G Gaudin, C Chappaz, ...
Journal of the Electrochemical Society 158 (6), P81, 2011
792011
GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding
I Radu, I Szafraniak, R Scholz, M Alexe, U Gösele
Journal of Applied Physics 94 (12), 7820-7825, 2003
682003
Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technology
F Fournel, L Continni, C Morales, J Da Fonseca, H Moriceau, F Rieutord, ...
Journal of Applied Physics 111 (10), 2012
652012
A model of interface defect formation in silicon wafer bonding
S Vincent, I Radu, D Landru, F Letertre, F Rieutord
Applied Physics Letters 94 (10), 2009
612009
Oxidation behavior of AlN substrate at low temperature
JW Lee, I Radu, M Alexe
Journal of materials science: materials in electronics 13, 131-137, 2002
442002
Strain relaxation in nanopatterned strained silicon round pillars
C Himcinschi, R Singh, I Radu, AP Milenin, W Erfurth, M Reiche, U Gösele, ...
Applied physics letters 90 (2), 2007
412007
Low-temperature layer splitting of (100) GaAs by coimplantation and direct wafer bonding
I Radu, I Szafraniak, R Scholz, M Alexe, U Gösele
Applied physics letters 82 (15), 2413-2415, 2003
412003
Physical models of planar spiral inductor integrated on the high-resistivity and trap-rich silicon-on-insulator substrates
S Liu, L Zhu, F Allibert, I Radu, X Zhu, Y Lu
IEEE Transactions on Electron Devices 64 (7), 2775-2781, 2017
372017
Investigation of hydrogen implantation induced blistering in GaN
R Singh, I Radu, U Gösele, SH Christiansen
physica status solidi c 3 (6), 1754-1757, 2006
322006
Formation of nanovoids in high-dose hydrogen implanted GaN
I Radu, R Singh, R Scholz, U Gösele, S Christiansen, G Brüderl, C Eichler, ...
Applied physics letters 89 (3), 2006
312006
Single-crystalline ferroelectric thin films by ion implantation and direct wafer bonding
I Szafraniak, I Radu, R Scholz, M Alexe, U Gösele
Integrated Ferroelectrics 55 (1), 983-990, 2003
312003
Strained silicon on insulator (SSOI) by waferbonding
SH Christiansen, R Singh, I Radu, M Reiche, U Gösele, D Webb, ...
Materials science in semiconductor processing 8 (1-3), 197-202, 2005
282005
New generation of SAW devices on advanced engineered substrates combining piezoelectric single crystals and silicon
S Ballandras, E Courjon, F Bernard, T Laroche, A Clairet, I Radu, I Huyet, ...
2019 Joint Conference of the IEEE International Frequency Control Symposium …, 2019
272019
3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525° C with improved reliability
A Vandooren, J Franco, B Parvais, Z Wu, L Witters, A Walke, W Li, L Peng, ...
2018 IEEE Symposium on VLSI Technology, 69-70, 2018
272018
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