Segregation analysis of cleft lip with or without cleft palate: a comparison of Danish and Japanese data. CS Chung, D Bixler, T Watanabe, H Koguchi, P Fogh-Andersen American journal of human genetics 39 (5), 603, 1986 | 184 | 1986 |
Novel interatomic potential energy function for Si, O mixed systems TWT Watanabe, HFH Fujiwara, HNH Noguchi, THT Hoshino, ... Japanese journal of applied physics 38 (4A), L366, 1999 | 183 | 1999 |
New linear-parabolic rate equation for thermal oxidation of silicon T Watanabe, K Tatsumura, I Ohdomari Physical review letters 96 (19), 196102, 2006 | 74 | 2006 |
Modeling, Simulation, Fabrication, and Characterization of a 10-W/cm2Class Si-Nanowire Thermoelectric Generator for IoT Applications M Tomita, S Oba, Y Himeda, R Yamato, K Shima, T Kumada, M Xu, ... IEEE Transactions on Electron Devices 65 (11), 5180-5188, 2018 | 73 | 2018 |
Improved interatomic potential for stressed Si, O mixed systems T Watanabe, D Yamasaki, K Tatsumura, I Ohdomari Applied surface science 234 (1-4), 207-213, 2004 | 73 | 2004 |
SiO2/Si interface structure and its formation studied by large-scale molecular dynamics simulation T Watanabe, K Tatsumura, I Ohdomari Applied surface science 237 (1-4), 125-133, 2004 | 72 | 2004 |
Strain distribution around SiO2/Si interface in Si nanowires: a molecular dynamics study H Ohta, T Watanabe, I Ohdomari Japanese journal of applied physics 46 (5S), 3277, 2007 | 65 | 2007 |
Residual order within thermally grown amorphous on crystalline silicon K Tatsumura, T Watanabe, D Yamasaki, T Shimura, M Umeno, I Ohdomari Physical Review B 69 (8), 085212, 2004 | 54 | 2004 |
Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation T Zhan, R Yamato, S Hashimoto, M Tomita, S Oba, Y Himeda, K Mesaki, ... Science and Technology of advanced MaTerialS 19 (1), 443-453, 2018 | 53 | 2018 |
Modeling of SiO2/Si (100) interface structure by using extended-Stillinger-Weber potential T Watanabe, I Ohdomari Thin Solid Films 343, 370-373, 1999 | 50 | 1999 |
Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors A Seike, T Tange, Y Sugiura, I Tsuchida, H Ohta, T Watanabe, ... Applied Physics Letters 91 (20), 2007 | 49 | 2007 |
Adsorption mechanism of ribosomal protein L2 onto a silica surface: a molecular dynamics simulation study R Tosaka, H Yamamoto, I Ohdomari, T Watanabe Langmuir 26 (12), 9950-9955, 2010 | 48 | 2010 |
Diffusion of molecular and atomic oxygen in silicon oxide T Hoshino, M Hata, S Neya, Y Nishioka, T Watanabe, K Tatsumura, ... Japanese journal of applied physics 42 (6R), 3560, 2003 | 43 | 2003 |
Effect of a layer on the thermal transport properties of nanowires: A molecular dynamics study T Zushi, K Ohmori, K Yamada, T Watanabe Physical Review B 91 (11), 115308, 2015 | 42 | 2015 |
Reactions and diffusion of atomic and molecular oxygen in the network K Tatsumura, T Shimura, E Mishima, K Kawamura, D Yamasaki, ... Physical Review B 72 (4), 045205, 2005 | 39 | 2005 |
The Possibility of mW/cm2-Class On-Chip Power Generation Using Ultrasmall Si Nanowire-Based Thermoelectric Generators H Zhang, T Xu, S Hashimoto, T Watanabe IEEE Transactions on Electron Devices 65 (5), 2016-2023, 2018 | 33 | 2018 |
Positive and negative dipole layer formation at high-k/SiO2 interfaces simulated by classical molecular dynamics K Shimura, R Kunugi, A Ogura, S Satoh, J Fei, K Kita, T Watanabe Japanese journal of applied physics 55 (4S), 04EB03, 2016 | 31 | 2016 |
A novel hetero-junction Tunnel-FET using Semiconducting silicide–Silicon contact and its scalability Y Wu, H Hasegawa, K Kakushima, K Ohmori, T Watanabe, A Nishiyama, ... Microelectronics Reliability 54 (5), 899-904, 2014 | 28 | 2014 |
Impact of structural strained layer near SiO2/Si interface on activation energy of time-dependent dielectric breakdown Y Harada, K Eriguchi, M Niwa, T Watanabe, I Ohdomari Japanese Journal of Applied Physics 39 (7S), 4687, 2000 | 28 | 2000 |
Development of interatomic potential of Ge (1− x− y) SixSny ternary alloy semiconductors for classical lattice dynamics simulation M Tomita, M Ogasawara, T Terada, T Watanabe Japanese journal of applied physics 57 (4S), 04FB04, 2018 | 27 | 2018 |