| Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors FA McGuire, YC Lin, K Price, GB Rayner, S Khandelwal, S Salahuddin, ... Nano letters 17 (8), 4801-4806, 2017 | 293 | 2017 |
| Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor AI Khan, K Chatterjee, JP Duarte, Z Lu, A Sachid, S Khandelwal, ... IEEE Electron Device Letters 37 (1), 111-114, 2015 | 260 | 2015 |
| FinFET modeling for IC simulation and design: using the BSIM-CMG standard YS Chauhan, D Lu, S Vanugopalan, S Khandelwal, JP Duarte, ... Academic Press, 2015 | 244 | 2015 |
| A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices S Khandelwal, N Goyal, TA Fjeldly IEEE Transactions on Electron Devices 58 (10), 3622-3625, 2011 | 237 | 2011 |
| Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation G Pahwa, T Dutta, A Agarwal, S Khandelwal, S Salahuddin, C Hu, ... IEEE Transactions on Electron Devices 63 (12), 4986-4992, 2016 | 219 | 2016 |
| Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices S Khandelwal, YS Chauhan, TA Fjeldly Transactions on Electron Devices 59 (10), 2856-2860, 2012 | 184 | 2012 |
| BSIM6: Analog and RF compact model for bulk MOSFET YS Chauhan, S Venugopalan, MA Chalkiadaki, MAU Karim, H Agarwal, ... IEEE Transactions on Electron Devices 61 (2), 234-244, 2013 | 143 | 2013 |
| ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ... IEEE Transactions on Electron Devices 66 (1), 80-86, 2018 | 142 | 2018 |
| A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices S Khandelwal, TA Fjeldly Solid-State Electronics 76, 60-66, 2012 | 141 | 2012 |
| Robust surface-potential-based compact model for GaN HEMT IC design S Khandelwal, C Yadav, S Agnihotri, YS Chauhan, A Curutchet, T Zimmer, ... IEEE Transactions on Electron Devices 60 (10), 3216-3222, 2013 | 136 | 2013 |
| BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control S Khandelwal, YS Chauhan, DD Lu, S Venugopalan, MAU Karim, ... IEEE Transactions on Electron Devices 59 (8), 2019-2026, 2012 | 122 | 2012 |
| Compact charge-based physical models for current and capacitances in AlGaN/GaN HEMTs FM Yigletu, S Khandelwal, TA Fjeldly, B Iniguez IEEE Transactions on Electron Devices 60 (11), 3746-3752, 2013 | 107 | 2013 |
| Compact models of negative-capacitance FinFETs: Lumped and distributed charge models JP Duarte, S Khandelwal, AI Khan, A Sachid, YK Lin, HL Chang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2016 | 105 | 2016 |
| BSIM-CMG: Standard FinFET compact model for advanced circuit design JP Duarte, S Khandelwal, A Medury, C Hu, P Kushwaha, H Agarwal, ... ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015 | 105 | 2015 |
| Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior SA Ahsan, S Ghosh, K Sharma, A Dasgupta, S Khandelwal, YS Chauhan IEEE Transactions on Electron Devices 63 (2), 565-572, 2015 | 100 | 2015 |
| ASM GaN: Industry standard model for GaN RF and power devices—Part-II: Modeling of charge trapping SA Albahrani, D Mahajan, J Hodges, YS Chauhan, S Khandelwal IEEE Transactions on Electron Devices 66 (1), 87-94, 2018 | 92 | 2018 |
| BSIM—Industry standard compact MOSFET models YS Chauhan, S Venugopalan, MA Karim, S Khandelwal, N Paydavosi, ... 2012 Proceedings of the European Solid-State Device Research Conference …, 2012 | 88 | 2012 |
| Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics S Khandelwal, JP Duarte, AI Khan, S Salahuddin, C Hu IEEE Electron Device Letters 38 (1), 142-144, 2016 | 85 | 2016 |
| Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan IEEE Journal of the Electron Devices Society 5 (5), 310-319, 2017 | 84 | 2017 |
| Surface-potential-based compact modeling of gate current in AlGaN/GaN HEMTs S Ghosh, A Dasgupta, S Khandelwal, S Agnihotri, YS Chauhan IEEE Transactions on Electron Devices 62 (2), 443-448, 2014 | 74 | 2014 |
