Sofiane Haffouz
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Mode-locked pulses from mid-infrared quantum cascade lasers
CY Wang, L Kuznetsova, VM Gkortsas, L Diehl, FX Kaertner, MA Belkin, ...
Optics Express 17 (15), 12929-12943, 2009
Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
P Vennéguès, B Beaumont, S Haffouz, M Vaille, P Gibart
Journal of crystal growth 187 (2), 167-177, 1998
Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
B Beaumont, S Haffouz, P Gibart
Applied Physics Letters 72 (8), 921-923, 1998
Method for producing a gallium nitride epitaxial layer
B Beaumont, P Gibart, JC Guillaume, G Nataf, M Vaille, S Haffouz
US Patent 6,325,850, 2001
Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire
M Leroux, B Beaumont, N Grandjean, P Lorenzini, S Haffouz, ...
Materials Science and Engineering: B 50 (1-3), 97-104, 1997
The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy
S Haffouz, H Lahrèche, P Vennéguès, P De Mierry, B Beaumont, ...
Applied physics letters 73 (9), 1278-1280, 1998
High quality GaN layers on Si (111) substrates: AlN buffer layer optimisation and insertion of a SiN intermediate layer
PR Hageman, S Haffouz, V Kirilyuk, A Grzegorczyk, PK Larsen
physica status solidi (a) 188 (2), 523-526, 2001
Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: The role of the photonic waveguide
S Haffouz, KD Zeuner, D Dalacu, PJ Poole, J Lapointe, D Poitras, ...
Nano letters 18 (5), 3047-3052, 2018
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
B Beaumont, M Vaille, G Nataf, A Bouillé, JC Guillaume, P Vennégues, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1998
Effect of magnesium and silicon on the lateral overgrowth of GaN patterned substrates by metal organic vapor phase epitaxy
S Haffouz, B Beaumont, P Gibart
MRS Internet Journal of Nitride Semiconductor Research 3, 1-6, 1998
Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors
SP McAlister, JA Bardwell, S Haffouz, H Tang
Journal of Vacuum Science & Technology A 24 (3), 624-628, 2006
Process for producing an epitaxial layer of gallium nitride
B Beaumont, P Gibart, JC Guillaume, G Nataf, M Vaille, S Haffouz
US Patent 6,802,902, 2004
Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy
G Nataf, B Beaumont, A Bouillé, S Haffouz, M Vaille, P Gibart
Journal of crystal growth 192 (1-2), 73-78, 1998
Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates
B Beaumont, P Gibart, M Vaille, S Haffouz, G Nataf, A Bouillé
Journal of crystal growth 189, 97-102, 1998
AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy
S Haffouz, H Tang, JA Bardwell, EM Hsu, JB Webb, S Rolfe
Solid-state electronics 49 (5), 802-807, 2005
Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy
F González-Posada, JA Bardwell, S Moisa, S Haffouz, H Tang, AF Brana, ...
Applied surface science 253 (14), 6185-6190, 2007
GaN-based solar-ultraviolet detection instrument
E Monroy, F Calle, C Angulo, P Vila, A Sanz, JA Garrido, E Calleja, ...
Applied optics 37 (22), 5058-5062, 1998
On‐chip integration of single photon sources via evanescent coupling of tapered nanowires to SiN waveguides
K Mnaymneh, D Dalacu, J McKee, J Lapointe, S Haffouz, JF Weber, ...
Advanced Quantum Technologies 3 (2), 1900021, 2020
Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height
S Haffouz, PJ Barrios, R Normandin, D Poitras, Z Lu
Optics letters 37 (6), 1103-1105, 2012
Optimization of Si/N treatment time of sapphire surface and its effect on the MOVPE GaN overlayers
S Haffouz, B Beaumont, P Vennegues, P Gibart
physica status solidi (a) 176 (1), 677-681, 1999
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