Ulrich Klostermann
Ulrich Klostermann
CAE Manager, Synopsys
Verified email at
Cited by
Cited by
Reference current source for current sense amplifier and programmable resistor configured with magnetic tunnel junction cells
D Braun, U Klostermann
US Patent App. 10/982,026, 2006
Condensed memory cell structure using a FinFET
H Park, U Klostermann, R Leuschner
US Patent 8,665,629, 2014
Integrated circuit
D Andres, R Bruchhaus, U Gruening-Von Schwerin, U Klostermann, ...
US Patent 8,063,394, 2011
Magnetic tunnel junctions for MRAM devices
SL Brown, A Gupta, U Klostermann, SSP Parkin, W Raberg, M Samant
US Patent 7,149,105, 2006
Integrated circuits; methods for manufacturing an integrated circuit and memory module
U Klostermann
US Patent 7,838,861, 2010
Electric device protection circuit and method for protecting an electric device
A Duch, U Klostermann, M Kund
US Patent 7,751,163, 2010
MRAM with magnetic via for storage of information and field sensor
D Braun, R Leuschner, U Klostermann
US Patent 7,092,284, 2006
Field programmable spin-logic based on magnetic tunnelling elements
R Richter, H Boeve, L Bär, J Bangert, UK Klostermann, J Wecker, G Reiss
Journal of magnetism and magnetic materials 240 (1-3), 127-129, 2002
A perpendicular spin torque switching based MRAM for the 28 nm technology node
UK Klostermann, M Angerbauer, U Gruning, F Kreupl, M Ruhrig, ...
2007 IEEE International Electron Devices Meeting, 187-190, 2007
Integrated circuit, method of manufacturing an integrated circuit, and memory module
U Klostermann, R Leuschner
US Patent 7,855,435, 2010
Magnetic tunnel junction cap structure and method for forming the same
SK Kanakasabapathy, DW Abraham, U Klostermann
US Patent 7,112,861, 2006
Calibration and verification of a stochastic model for EUV resist
W Gao, A Philippou, U Klostermann, J Siebert, V Philipsen, E Hendrickx, ...
Extreme Ultraviolet (EUV) Lithography III 8322, 421-430, 2012
Calibration of physical resist models: methods, usability, and predictive power
U Klostermann, T Mülders, D Ponomarenco, T Schmöller, ...
Journal of Micro/Nanolithography, MEMS and MOEMS 8 (3), 033005-033005-10, 2009
MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations
R Leuschner, U Klostermann, R Ferrant
US Patent 8,310,866, 2012
Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module
R Leuschner, U Klostermann
US Patent 7,697,322, 2010
A 0.18/spl mu/m logic-based MRAM technology for high performance nonvolatile memory applications
AR Sitaram, DW Abraham, C Alof, D Braun, S Brown, G Costrini, F Findeis, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
Integrated circuit having a magnetic tunnel junction device and method
U Klostermann, F Kreupl
US Patent 7,902,616, 2011
Magnetoresistive sensor with tunnel barrier and method
F Kreupl, U Klostermann
US Patent 7,863,700, 2011
Magnetoresistive sensor element for sensing a magnetic field
J Zimmer, U Klostermann, C Alof
US Patent 7,495,434, 2009
Vortex penetration depth of κ-(ET) 2Cu [N (CN) 2] Br
NH Tea, FAB Chaves, U Klostermann, R Giannetta, MB Salamon, ...
Physica C: Superconductivity 280 (4), 281-288, 1997
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