| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1166 | 2018 |
| Two-dimensional MoS 2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting Xu Zhang, Jesús Grajal, Jose Luis Vazquez-Roy, Ujwal Radhakrishna, Xiaoxue ... Nature, 2019 | 356 | 2019 |
| Gallium nitride vertical power devices on foreign substrates: a review and outlook Y Zhang, A Dadgar, T Palacios Journal of Physics D: Applied Physics 51 (27), 273001, 2018 | 292 | 2018 |
| High-performance GaN vertical fin power transistors on bulk GaN substrates M Sun, Y Zhang, X Gao, T Palacios IEEE Electron Device Letters 38 (4), 509-512, 2017 | 285 | 2017 |
| High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits Lili Yu, Ahmad Zubair, Elton J. G. Santos, Xu Zhang, Yuxuan Lin, Yuhao Zhang ... Nano Letters 15 (8), 4928–4934, 2015 | 256 | 2015 |
| GaN-on-Si Vertical Schottky and pn Diodes Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios IEEE Electron Device Letters 35 (6), 618 - 620, 2014 | 205 | 2014 |
| A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 Joseph A. Spencer, Alyssa L. Mock, Alan G. Jacobs, Mathias Schubert, Yuhao ... Applied Physics Reviews 9 (1), 011315, 2022 | 204 | 2022 |
| Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios IEEE Transactions on Electron Devices 60 (7), 2224-2230, 2013 | 194 | 2013 |
| Vertical Ga2O3 Schottky Barrier Diodes with Small-Angle Beveled Field Plates: a Baliga’s Figure-of-Merit of 0.6 GW/cm2 Noah Allen, Ming Xiao, Xiaodong Yan, Kohei Sasaki, Marko J. Tadjer, Jiahui ... IEEE Electron Device Letters, 2019 | 187 | 2019 |
| Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects Koon Hoo Teo, Yuhao Zhang, Nadim Chowdhury, Shaloo Rakheja, Rui Ma, Qingyun ... Journal of Applied Physics 130 (16), 160902, 2021 | 183 | 2021 |
| Design, Modeling and Fabrication of CVD Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics Lili Yu, Dina El-Damak, Ujwal Radhakrishna, Xi Ling, Ahmad Zubair, Yuxuan ... Nano Letters 16 (10), 6349–6356, 2016 | 181* | 2016 |
| Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Yuhao Zhang, Zhihong Liu, Marko J Tadjer, Min Sun, Daniel Piedra ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 173 | 2017 |
| Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ... Electron Devices, IEEE Transactions on 62 (7), 2155 - 2161, 2015 | 164 | 2015 |
| Materials and processing issues in vertical GaN power electronics J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios Materials Science in Semiconductor Processing 78, 75-84, 2018 | 157 | 2018 |
| Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ... IEEE Electron Device Letters 40 (1), 75-78, 2019 | 153 | 2019 |
| Stability, reliability, and robustness of GaN power devices: A review JP Kozak, R Zhang, M Porter, Q Song, J Liu, B Wang, R Wang, W Saito, ... IEEE Transactions on Power Electronics 38 (7), 8442-8471, 2023 | 126 | 2023 |
| Surge-Energy and Overvoltage Ruggedness of p-Gate GaN HEMTs Ruizhe Zhang, Joseph Kozak, Ming Xiao, Jingcun Liu, Yuhao Zhang IEEE Transactions on Power Electronics, 2020 | 120 | 2020 |
| Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors Y Zhang, M Sun, SJ Joglekar, T Fujishima, T Palacios Applied Physics Letters 103 (3), 2013 | 120 | 2013 |
| 1200 V GaN vertical fin power field-effect transistors Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ... Electron Devices Meeting (IEDM), 2017 IEEE International, 9.2. 1-9.2. 4, 2017 | 117 | 2017 |
| p-Channel GaN Transistor based on p-GaN/AlGaN/GaN on Si N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ... IEEE Electron Device Letters, 2019 | 115 | 2019 |
Tomás PalaciosMITVerified email at mit.edu
