Follow
Enrique G. Marin
Enrique G. Marin
Departamento Electrónica y Tecnología de Computadores. Universidad de Granada
Verified email at ugr.es
Title
Cited by
Cited by
Year
Lateral heterostructure field-effect transistors based on two-dimensional material stacks with varying thickness and energy filtering source
EG Marin, D Marian, M Perucchini, G Fiori, G Iannaccone
ACS nano 14 (2), 1982-1989, 2020
632020
Ultralow specific contact resistivity in metal–graphene junctions via contact engineering
V Passi, A Gahoi, EG Marin, T Cusati, A Fortunelli, G Iannaccone, G Fiori, ...
Advanced Materials Interfaces 6 (1), 1801285, 2019
552019
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2
D Marian, E Dib, T Cusati, EG Marin, A Fortunelli, G Iannaccone, G Fiori
Physical Review Applied 8, 054047, 2017
532017
Modeling of electron devices based on 2-D materials
EG Marin, M Perucchini, D Marian, G Iannaccone, G Fiori
IEEE Transactions on Electron Devices 65 (10), 4167-4179, 2018
472018
A new holistic model of 2-D semiconductor FETs
EG Marin, SJ Bader, D Jena
IEEE Transactions on Electron Devices 65 (3), 1239-1245, 2018
462018
First-principles simulations of FETs based on two-dimensional InSe
EG Marin, D Marian, G Iannaccone, G Fiori
IEEE Electron Device Letters 39 (4), 626-629, 2018
452018
Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts
A Avsar, K Marinov, EG Marin, G Iannaccone, K Watanabe, T Taniguchi, ...
Advanced Materials 30 (18), 1707200, 2018
372018
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting
H Mine, A Kobayashi, T Nakamura, T Inoue, S Pakdel, D Marian, ...
Physical review letters 123 (14), 146803, 2019
352019
Flexible one-dimensional metal–insulator–graphene diode
Z Wang, B Uzlu, M Shaygan, M Otto, M Ribeiro, EG Marín, G Iannaccone, ...
ACS Applied Electronic Materials 1 (6), 945-950, 2019
352019
First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials
EG Marin, D Marian, G Iannaccone, G Fiori
Nanoscale 9 (48), 19390-19397, 2017
352017
A graphene field-effect transistor based analogue phase shifter for high-frequency applications
A Medina-Rull, F Pasadas, EG Marin, A Toral-Lopez, J Cuesta, A Godoy, ...
IEEE Access 8, 209055-209063, 2020
292020
Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, P Sánchez-Moreno, ...
Journal of Applied Physics 112 (8), 2012
292012
Analytical gate capacitance modeling of III–V nanowire transistors
EG Marin, FJG Ruiz, IM Tienda-Luna, A Godoy, F Gamiz
IEEE transactions on electron devices 60 (5), 1590-1599, 2013
242013
Tunnel-field-effect spin filter from two-dimensional antiferromagnetic stanene
EG Marin, D Marian, G Iannaccone, G Fiori
Physical Review Applied 10 (4), 044063, 2018
232018
Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances
F Pasadas, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy, S Park, ...
npj 2D Materials and Applications 3 (1), 47, 2019
222019
Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN
A Piacentini, D Marian, DS Schneider, E González Marín, Z Wang, M Otto, ...
Advanced Electronic Materials 8 (9), 2200123, 2022
192022
Analytic drain current model for III–V cylindrical nanowire transistors
EG Marin, FG Ruiz, V Schmidt, A Godoy, H Riel, F Gamiz
Journal of Applied Physics 118 (4), 2015
172015
A SPICE compact model for ambipolar 2-D-material FETs aiming at circuit design
SA Ahsan, SK Singh, MA Mir, M Perucchini, DK Polyushkin, T Mueller, ...
IEEE Transactions on Electron Devices 68 (6), 3096-3103, 2021
162021
GFET asymmetric transfer response analysis through access region resistances
A Toral-Lopez, EG Marin, F Pasadas, JM Gonzalez-Medina, FG Ruiz, ...
Nanomaterials 9 (7), 1027, 2019
152019
Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility
EG Marin, FG Ruiz, A Godoy, IM Tienda-Luna, C Martinez-Blanque, ...
Electron Devices, IEEE Transactions on 62 (1), 224 - 227, 2015
152015
The system can't perform the operation now. Try again later.
Articles 1–20