Enrique G. Marin
Enrique G. Marin
Departamento Electrónica y Tecnología de Computadores. Universidad de Granada
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Cited by
Ultralow specific contact resistivity in metal–graphene junctions via contact engineering
V Passi, A Gahoi, EG Marin, T Cusati, A Fortunelli, G Iannaccone, G Fiori, ...
Advanced Materials Interfaces 6 (1), 1801285, 2019
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2
D Marian, E Dib, T Cusati, EG Marin, A Fortunelli, G Iannaccone, G Fiori
Physical Review Applied 8, 054047, 2017
Lateral heterostructure field-effect transistors based on two-dimensional material stacks with varying thickness and energy filtering source
EG Marin, D Marian, M Perucchini, G Fiori, G Iannaccone
ACS nano 14 (2), 1982-1989, 2020
A new holistic model of 2-D semiconductor FETs
EG Marin, SJ Bader, D Jena
IEEE Transactions on Electron Devices 65 (3), 1239-1245, 2018
First-principles simulations of FETs based on two-dimensional InSe
EG Marin, D Marian, G Iannaccone, G Fiori
IEEE Electron Device Letters 39 (4), 626-629, 2018
Modeling of electron devices based on 2-D materials
EG Marin, M Perucchini, D Marian, G Iannaccone, G Fiori
IEEE Transactions on Electron Devices 65 (10), 4167-4179, 2018
Flexible one-dimensional metal–insulator–graphene diode
Z Wang, B Uzlu, M Shaygan, M Otto, M Ribeiro, EG Marín, G Iannaccone, ...
ACS Applied Electronic Materials 1 (6), 945-950, 2019
First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials
EG Marin, D Marian, G Iannaccone, G Fiori
Nanoscale 9 (48), 19390-19397, 2017
Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, P Sánchez-Moreno, ...
Journal of Applied Physics 112 (8), 2012
Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts
A Avsar, K Marinov, EG Marin, G Iannaccone, K Watanabe, T Taniguchi, ...
Advanced Materials 30 (18), 1707200, 2018
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting
H Mine, A Kobayashi, T Nakamura, T Inoue, S Pakdel, D Marian, ...
Physical review letters 123 (14), 146803, 2019
Analytical gate capacitance modeling of III–V nanowire transistors
EG Marin, FJG Ruiz, IM Tienda-Luna, A Godoy, F Gamiz
IEEE transactions on electron devices 60 (5), 1590-1599, 2013
A graphene field-effect transistor based analogue phase shifter for high-frequency applications
A Medina-Rull, F Pasadas, EG Marin, A Toral-Lopez, J Cuesta, A Godoy, ...
IEEE Access 8, 209055-209063, 2020
Tunnel-field-effect spin filter from two-dimensional antiferromagnetic stanene
EG Marin, D Marian, G Iannaccone, G Fiori
Physical Review Applied 10 (4), 044063, 2018
Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances
F Pasadas, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy, S Park, ...
npj 2D Materials and Applications 3 (1), 47, 2019
Analytic drain current model for III–V cylindrical nanowire transistors
EG Marin, FG Ruiz, V Schmidt, A Godoy, H Riel, F Gamiz
Journal of Applied Physics 118 (4), 2015
Mobility and capacitance comparison in scaled InGaAs vs Si Trigate MOSFETs
EG Marin, FG Garcia-Ruiz, A Godoy, IM Tienda-Luna, F Gamiz
Electron Device Letters 36 (2), 114 - 116, 2015
Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility
EG Marin, FG Ruiz, A Godoy, IM Tienda-Luna, C Martinez-Blanque, ...
Electron Devices, IEEE Transactions on 62 (1), 224 - 227, 2015
Modeling of quantum confinement and capacitance in III–V gate-all-around 1-D transistors
MD Ganeriwala, C Yadav, FG Ruiz, EG Marin, YS Chauhan, ...
IEEE Transactions on Electron Devices 64 (12), 4889-4896, 2017
Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors
JM Gonzalez-Medina, FG Ruiz, EG Marin, A Godoy, F Gámiz
Solid-State Electronics 114, 30-34, 2015
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