Laxman Raju Thoutam
Cited by
Cited by
Origin of the turn-on temperature behavior in WTe2
YL Wang, LR Thoutam, ZL Xiao, J Hu, S Das, ZQ Mao, J Wei, R Divan, ...
Physical Review B 92 (18), 180402, 2015
Temperature-dependent three-dimensional anisotropy of the magnetoresistance in WTe2
LR Thoutam, YL Wang, ZL Xiao, S Das, A Luican-Mayer, R Divan, ...
Physical Review Letters 115 (4), 046602, 2015
Defect-driven localization crossovers in MBE-grown La-doped films
T Wang, LR Thoutam, A Prakash, W Nunn, G Haugstad, B Jalan
Physical Review Materials 1 (6), 061601, 2017
Extended Kohler’s rule of magnetoresistance
J Xu, F Han, TT Wang, LR Thoutam, SE Pate, M Li, X Zhang, YL Wang, ...
Physical Review X 11 (4), 041029, 2021
Enhancing superconducting critical current by randomness
YL Wang, LR Thoutam, ZL Xiao, B Shen, JE Pearson, R Divan, LE Ocola, ...
Physical Review B 93 (4), 045111, 2016
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
J Ajayan, D Nirmal, R Ramesh, S Bhattacharya, S Tayal, LMIL Joseph, ...
Measurement 186, 110100, 2021
Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO3 Films
LR Thoutam, J Yue, A Prakash, T Wang, KE Elangovan, B Jalan
ACS applied materials & interfaces 11 (8), 7666-7670, 2019
Optimization of design space for vertically stacked junctionless nanosheet FET for analog/RF applications
S Valasa, S Tayal, LR Thoutam
Silicon 14 (16), 10347-10356, 2022
Parallel magnetic field suppresses dissipation in superconducting nanostrips
YL Wang, A Glatz, GJ Kimmel, IS Aranson, LR Thoutam, ZL Xiao, ...
Proceedings of the National Academy of Sciences 114 (48), E10274-E10280, 2017
A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications
S Valasa, S Tayal, LR Thoutam, J Ajayan, S Bhattacharya
Micro and Nanostructures 170, 207374, 2022
An intensive study of tree-shaped JL-NSFET: digital and analog/RF perspective
S Valasa, S Tayal, LR Thoutam
IEEE Transactions on Electron Devices 69 (12), 6561-6568, 2022
Design insights into thermal performance of vertically stacked JL-NSFET with high-k gate dielectric for sub 5-nm technology node
S Valasa, S Tayal, LR Thoutam
ECS Journal of Solid State Science and Technology 11 (4), 041008, 2022
A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor
S Das, W Zhang, LR Thoutam, Z Xiao, A Hoffmann, M Demarteau, ...
IEEE Electron Device Letters 36 (6), 621-623, 2015
Plasmon–Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V–1 s–1
AK Rajapitamahuni, AK Manjeshwar, A Kumar, A Datta, P Ranga, ...
ACS nano 16 (6), 8812-8819, 2022
Impurity band conduction in Si-doped β-Ga2O3 films
AK Rajapitamahuni, LR Thoutam, P Ranga, S Krishnamoorthy, B Jalan
Applied Physics Letters 118 (7), 2021
Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications
S Valasa, S Tayal, LR Thoutam
Micro and Nanostructures 179, 207582, 2023
Performance evaluation of spacer dielectric engineered vertically stacked junctionless nanosheet FET for sub-5 nm technology node
S Valasa, S Tayal, LR Thoutam
ECS Journal of Solid State Science and Technology 11 (9), 093006, 2022
Anomalous transport in high-mobility superconducting SrTiO3 thin films
J Yue, Y Ayino, TK Truttmann, MN Gastiasoro, E Persky, A Khanukov, ...
Science Advances 8 (21), eabl5668, 2022
Gate-stack optimization of a vertically stacked nanosheet FET for digital/analog/RF applications
S Tayal, S Bhattacharya, J Ajayan, LR Thoutam, D Muchahary, S Jadav, ...
Journal of Computational Electronics 21 (3), 608-617, 2022
Electronic structure and small-hole polarons in
J Yue, NF Quackenbush, I Laraib, H Carfagno, S Hameed, A Prakash, ...
Physical Review Materials 4 (11), 112001, 2020
The system can't perform the operation now. Try again later.
Articles 1–20