José María González-Medina
José María González-Medina
Ingeniero de Telecomunicaciones, Sistemas Electrónicos
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High responsivity and quantum efficiency of graphene/silicon photodiodes achieved by interdigitating Schottky and gated regions
S Riazimehr, S Kataria, JM Gonzalez-Medina, S Wagner, M Shaygan, ...
Acs Photonics 6 (1), 107-115, 2018
Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors
JM Gonzalez-Medina, FG Ruiz, EG Marin, A Godoy, F Gámiz
Solid-State Electronics 114, 30-34, 2015
GFET asymmetric transfer response analysis through access region resistances
A Toral-Lopez, EG Marin, F Pasadas, JM Gonzalez-Medina, FG Ruiz, ...
Nanomaterials 9 (7), 1027, 2019
Analytic potential and charge model of semiconductor quantum wells
EG Marin, IM Tienda-Luna, FG Ruiz, JM Gonzalez-Medina, A Godoy, ...
IEEE Transactions on Electron Devices 62 (12), 4186-4191, 2015
Assessment of three electrolyte–molecule electrostatic interaction models for 2D material based BioFETs
A Toral-Lopez, EG Marin, JM Gonzalez-Medina, FJ Romero, FG Ruiz, ...
Nanoscale Advances 1 (3), 1077-1085, 2019
Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires
C Martinez-Blanque, EG Marin, A Toral, JM Gonzalez-Medina, FG Ruiz, ...
Journal of Physics D: Applied Physics 50 (49), 495106, 2017
Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
A Toral-Lopez, F Pasadas, EG Marin, A Medina-Rull, ...
Nanoscale Advances, 2021
Quasi-fermi-based charge transport scheme for device simulation in cryogenic, wide bandgap, and high-voltage applications
Z Stanojević, JM González-Medina, F Schanovsky, M Karner
IEEE Transactions on Electron Devices 70 (2), 708-713, 2022
On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs
JM Gonzalez-Medina, Z Stanojević, Z Hou, Q Zhang, W Li, J Xu, M Karner
Solid-State Electronics 199, 108494, 2023
Numerical Investigation of the Photogating Effect in MoTe2 Photodetectors
JM Gonzalez-Medina, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy
2019 International Conference on Simulation of Semiconductor Processes and …, 2019
Simulation of 2D semiconductor based MOSFETs
A Toral-Lopez, JM Gonzalez-Medina, E Gonzalez Marin, ...
Design, characterization and simulation of electronic and optoelectronic nanodevices based on bidimensional materials
JM González-Medina
Universidad de Granada, 2020
Hole mobility of cylindrical GaSb nanowires
FJ García Ruiz, E González Marín, CJ Martínez Blanque, IM Tienda Luna, ...
Gate capacitance performance of p-type InSb and GaSb nanowires
CJ Martínez Blanque, FJ García Ruiz, L Donetti, A Toral López, ...
Numerical study of p-type InSb and GaSb nanowires
CJ Martínez Blanque, A Toral López, JM González-Medina, ...
On the influence of the back-gate bias on InGaAs Trigate MOSFETs
EG Marin, FG Ruiz, A Godoy, JM Gonzalez-Medina, IM Tienda-Luna, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
Simulation of the phonon-limited electron mobility in multi-layer MoS 2 field-effect transistors
JM González-Medina, FJ Garcia Ruiz, A Godoy Medina, ...
IEEE, 2015
Calculation of the Ballistic Current of Few-Layer MoS2 Field-Effect Transistors
FJ García Ruiz, B Biel, JM González-Medina, A Toral-Lopez, ...
Hole mobility of cylindrical GaSb nanowires
FG Ruiz, EG Marín, C Martínez-Blanque, IM Tienda-Luna, ...
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