Bipolar resistive switching in polycrystalline K Tsunoda, Y Fukuzumi, JR Jameson, Z Wang, PB Griffin, Y Nishi
Applied physics letters 90 (11), 113501, 2007
245 2007 Third-order nanocircuit elements for neuromorphic engineering S Kumar, RS Williams, Z Wang
Nature 585 (7826), 518-523, 2020
157 2020 Physical origins of current and temperature controlled negative differential resistances in NbO2 S Kumar, Z Wang, N Davila, N Kumari, KJ Norris, X Huang, JP Strachan, ...
Nature communications 8 (1), 658, 2017
140 2017 Conduction channel formation and dissolution due to oxygen thermophoresis/diffusion in hafnium oxide memristors S Kumar, Z Wang, X Huang, N Kumari, N Davila, JP Strachan, D Vine, ...
ACS nano 10 (12), 11205-11210, 2016
99 2016 Oxygen migration during resistance switching and failure of hafnium oxide memristors S Kumar, Z Wang, X Huang, N Kumari, N Davila, JP Strachan, D Vine, ...
Applied Physics Letters 110 (10), 2017
72 2017 Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism Z Wang, S Kumar, Y Nishi, HSP Wong
Applied Physics Letters 112 (19), 193503, 2018
32 2018 Effect of thermal insulation on the electrical characteristics of NbOx threshold switches Z Wang, S Kumar, HSP Wong, Y Nishi
Applied Physics Letters 112 (7), 073102, 2018
32 2018 Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors S Kumar, N Davila, Z Wang, X Huang, JP Strachan, D Vine, ALD Kilcoyne, ...
Nanoscale 9 (5), 1793-1798, 2017
28 2017 Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS) Z Jiang, Z Wang, X Zheng, S Fong, S Qin, HY Chen, C Ahn, J Cao, Y Nishi, ...
2016 IEEE international electron devices meeting (IEDM), 21.3. 1-21.3. 4, 2016
18 2016 Intrinsic limits of leakage current in self-heating-triggered threshold switches Z Wang, S Kumar, RS Williams, Y Nishi, HSP Wong
Applied Physics Letters 114 (18), 183501, 2019
12 2019 ACS Nano 10, 11205 (2016) S Kumar, Z Wang, X Huang, N Kumari, N Davila, JP Strachan, D Vine, ...
Article CAS, 0
9 Savel, ev R Midya, Z Wang, J Zhang
SE, 0
8 Ultrafast accelerated retention test methodology for RRAM using micro thermal stage Z Wang, Z Jiang, X Zheng, S Fong, HY Chen, HSP Wong, Y Nishi
IEEE Electron Device Letters 38 (7), 863-866, 2017
7 2017 Fully memristive neural networks for pattern classification with unsupervised learning. Nat. Electron. 1 (2), 137–145 (2018) Z Wang, S Joshi, S Savel’Ev, W Song, R Midya, Y Li, M Rao, P Yan, ...
6 Bidirectional analog conductance modulation for RRAM-based neural networks Z Jiang, Z Wang, X Zheng, SW Fong, S Qin, HY Chen, EC Ahn, J Cao, ...
IEEE Transactions on Electron Devices 67 (11), 4904-4910, 2020
4 2020 