Quantum capacitance devices S Luryi Applied Physics Letters 52 (6), 501-503, 1988 | 1122 | 1988 |
Frequency limit of double‐barrier resonant‐tunneling oscillators S Luryi Applied Physics Letters 47 (5), 490-492, 1985 | 659 | 1985 |
New approach to the high quality epitaxial growth of lattice‐mismatched materials S Luryi, E Suhir Applied Physics Letters 49 (3), 140-142, 1986 | 484 | 1986 |
GexSi1-x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm SL H Temkin, TP Pearsall, JC Bean, RA Logan Applied physics letters 48 (15), 963-965, 1986 | 294 | 1986 |
New infrared detector on a silicon chip S Luryi, A Kastalsky, JC Bean IEEE Transactions on Electron Devices 31 (9), 1135-1139, 1984 | 246 | 1984 |
Quantum percolation and quantization of Hall resistance in two-dimensional electron gas RF Kazarinov, S Luryi Physical Review B 25 (12), 7626, 1982 | 202 | 1982 |
Lateral interband tunneling transistor in silicon-on-insulator C Aydin, A Zaslavsky, S Luryi, S Cristoloveanu, D Mariolle, D Fraboulet, ... Applied Physics Letters 84 (10), 1780-1782, 2004 | 188 | 2004 |
Future trends in microelectronics S Luryi, J Xu, A Zaslavsky Wiley, 1999 | 186* | 1999 |
Quaternary InGaAsSb thermophotovoltaic diodes MW Dashiell, JF Beausang, H Ehsani, GJ Nichols, DM Depoy, ... IEEE Transactions on Electron Devices 53 (12), 2879-2891, 2006 | 176 | 2006 |
Load sharing controller for optimizing resource utilization cost TG Robertazzi, S Luryi, S Charcranoon US Patent 6,370,560, 2002 | 168 | 2002 |
Load sharing controller for optimizing monetary cost TG Robertazzi, S Luryi, J Sohn US Patent 5,889,989, 1999 | 166 | 1999 |
Space-charge-limited current in a film AA Grinberg, S Luryi, MR Pinto, NL Schryer IEEE Transactions on Electron Devices 36 (6), 1162-1170, 1989 | 163 | 1989 |
Tunneling-injection quantum-dot laser: ultrahigh temperature stability LV Asryan, S Luryi IEEE Journal of Quantum Electronics 37 (7), 905-910, 2001 | 155 | 2001 |
Resonant tunneling of two‐dimensional electrons through a quantum wire: A negative transconductance device S Luryi, F Capasso Applied physics letters 47 (12), 1347-1349, 1985 | 152 | 1985 |
Optimizing computing costs using divisible load analysis J Sohn, TG Robertazzi, S Luryi IEEE Transactions on parallel and distributed systems 9 (3), 225-234, 1998 | 137 | 1998 |
VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process M Gurvitch, S Luryi, A Polyakov, A Shabalov, M Dudley, G Wang, S Ge, ... Journal of Applied Physics 102 (3), 2007 | 125 | 2007 |
Avalanche gain in GexSi1-x/Si infrared waveguide detectors TP Pearsall, H Temkin, JC Bean, S Luryi IEEE electron device letters 7 (5), 330-332, 1986 | 120 | 1986 |
Theory of quantized Hall effect at low temperatures S Luryi, RF Kazarinov Physical Review B 27 (2), 1386, 1983 | 119 | 1983 |
Charge injection transistor based on real-space hot-electron transfer S Luryi, A Kastalsky, AC Gossard, RH Hendel IEEE Transactions on Electron Devices 31 (6), 832-839, 1984 | 114 | 1984 |
Theory of gain spectra for quantum cascade lasers and temperature dependence of their characteristics at low and moderate carrier concentrations VB Gorfinkel, S Luryi, B Gelmont IEEE Journal of Quantum Electronics 32 (11), 1995-2003, 1996 | 113 | 1996 |