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Neeraj Nepal
Neeraj Nepal
Verified email at nrl.navy.mil
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Cited by
Year
Temperature and compositional dependence of the energy band gap of AlGaN alloys
N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied Physics Letters 87 (24), 2005
2202005
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
ML Nakarmi, N Nepal, JY Lin, HX Jiang
Applied Physics Letters 94 (9), 2009
2112009
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster
ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019
2042019
Photoluminescence studies of impurity transitions in AlGaN alloys
N Nepal, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 89 (9), 2006
1752006
Correlation between optical and electrical properties of Mg-doped AlN epilayers
ML Nakarmi, N Nepal, C Ugolini, TM Altahtamouni, JY Lin, HX Jiang
Applied physics letters 89 (15), 2006
1662006
Correlation between optoelectronic and structural properties and epilayer thickness of AlN
BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ...
Applied Physics Letters 90 (24), 2007
1632007
GaN/NbN epitaxial semiconductor/superconductor heterostructures
R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...
Nature 555 (7695), 183-189, 2018
1482018
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 2017
1292017
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics
N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr
Applied physics express 4 (5), 055802, 2011
1052011
Electroluminescent properties of erbium-doped III–N light-emitting diodes
JM Zavada, SX Jin, N Nepal, JY Lin, HX Jiang, P Chow, B Hertog
Applied physics letters 84 (7), 1061-1063, 2004
1022004
Exciton localization in AlGaN alloys
N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 88 (6), 2006
932006
Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition
C Ugolini, N Nepal, JY Lin, HX Jiang, JM Zavada
Applied physics letters 89 (15), 2006
902006
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ...
Nature communications 11 (1), 2314, 2020
782020
Epitaxial growth of III–nitride/graphene heterostructures for electronic devices
N Nepal, VD Wheeler, TJ Anderson, FJ Kub, MA Mastro, RL Myers-Ward, ...
Applied Physics Express 6 (6), 061003, 2013
752013
Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
N Nepal, SB Qadri, JK Hite, NA Mahadik, MA Mastro, CR Eddy
Applied Physics Letters 103 (8), 2013
732013
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ...
Chemistry of Materials 32 (3), 1140-1152, 2020
672020
Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation
AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ...
IEEE electron device letters 34 (9), 1115-1117, 2013
672013
Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy
N Nepal, NA Mahadik, LO Nyakiti, SB Qadri, MJ Mehl, JK Hite, CR Eddy Jr
Crystal growth & design 13 (4), 1485-1490, 2013
612013
The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
DR Boris, VD Wheeler, N Nepal, SB Qadri, SG Walton, CCR Eddy
Journal of Vacuum Science & Technology A 38 (4), 2020
592020
Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition
C Ugolini, N Nepal, JY Lin, HX Jiang, JM Zavada
Applied physics letters 90 (5), 2007
592007
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