| A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007 | 95 | 2007 |
| Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz Solid-State Electronics 54 (2), 131-136, 2010 | 53 | 2010 |
| Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro Applied physics letters 88 (12), 2006 | 47 | 2006 |
| An Analytical – Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects JB Roldán, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ... IEEE transactions on electron devices 57 (11), 2925-2933, 2010 | 42 | 2010 |
| -FET as Capacitor-Less eDRAM Cell For High-Density Integration C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ... IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017 | 35 | 2017 |
| The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures C Sampedro-Matarín, F Gámiz, A Godoy, FJG Ruiz IEEE Transactions on Electron Devices 53 (11), 2703-2710, 2006 | 34 | 2006 |
| Quantum-mechanical effects in multiple-gate MOSFETs A Godoy, A Ruiz-Gallardo, C Sampedro, F Gámiz Journal of Computational Electronics 6, 145-148, 2007 | 28 | 2007 |
| On the extension of ET-FDSOI roadmap for 22 nm node and beyond C Sampedro, F Gámiz, A Godoy Solid-state electronics 90, 23-27, 2013 | 24 | 2013 |
| Reaching sub-32nm nodes: ET-FDSOI and BOX optimization C Sampedro, F Gámiz, L Donetti, A Godoy Solid-State Electronics 70, 101-105, 2012 | 24 | 2012 |
| Multi-subband ensemble Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ... Solid-State Electronics 65, 88-93, 2011 | 24 | 2011 |
| Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs A Godoy, F Ruiz, C Sampedro, F Gámiz, U Ravaioli Solid-State Electronics 51 (9), 1211-1215, 2007 | 21 | 2007 |
| InGaAs capacitor-less DRAM cells TCAD demonstration C Navarro, S Navarro, C Marquez, L Donetti, C Sampedro, S Karg, H Riel, ... IEEE Journal of the Electron Devices Society 6, 884-892, 2018 | 17 | 2018 |
| Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs A Mangla, JM Sallese, C Sampedro, F Gamiz, C Enz IEEE Transactions on Electron Devices 61 (8), 2640-2646, 2014 | 17 | 2014 |
| Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs M Cheralathan, C Sampedro, JB Roldán, F Gámiz, G Iannaccone, ... Semiconductor science and technology 26 (9), 095015, 2011 | 17 | 2011 |
| Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices C Medina-Bailon, JL Padilla, T Sadi, C Sampedro, A Godoy, L Donetti, ... IEEE Transactions on Electron Devices 66 (3), 1145-1152, 2019 | 16 | 2019 |
| A parallel deterministic solver for the Schrödinger–Poisson–Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo F Vecil, JM Mantas, MJ Cáceres, C Sampedro, A Godoy, F Gámiz Computers & Mathematics with Applications 67 (9), 1703-1721, 2014 | 14 | 2014 |
| Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo C Medina-Bailon, JL Padilla, C Sampedro, A Godoy, L Donetti, F Gamiz IEEE Transactions on Electron Devices 65 (11), 4740-4746, 2018 | 13 | 2018 |
| MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections C Medina-Bailon, C Sampedro, JL Padilla, A Godoy, L Donetti, F Gamiz, ... 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 13 | 2018 |
| 3d multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors C Sampedro, L Donetti, F Gamiz, A Godoy, FJ Garcia-Ruiz, VP Georgiev, ... 2014 International conference on simulation of semiconductor processes and …, 2014 | 12 | 2014 |
| Two-dimensional Monte Carlo simulation of DGSOI MOSFET misalignment R Valin, C Sampedro, M Aldegunde, A Garcia-Loureiro, N Seoane, ... IEEE Transactions on Electron Devices 59 (6), 1621-1628, 2012 | 12 | 2012 |
Francisco GamizProfessor of ElectronicsVerified email at ugr.es
