| Tutorial: Defects in semiconductors—Combining experiment and theory A Alkauskas, MD McCluskey, CG Van de Walle Journal of Applied Physics 119 (18), 2016 | 448 | 2016 |
| Measurement and control of single nitrogen-vacancy center spins above 600 K DM Toyli, DJ Christle, A Alkauskas, BB Buckley, CG Van de Walle, ... Physical Review X 2, 031001, 2012 | 391 | 2012 |
| First-principles theory of nonradiative carrier capture via multiphonon emission A Alkauskas, Q Yan, CG Van de Walle Physical Review B 90 (7), 075202, 2014 | 371 | 2014 |
| Defect energy levels in density functional calculations: Alignment and band gap problem A Alkauskas, P Broqvist, A Pasquarello Physical Review Letters 101 (4), 46405, 2008 | 356 | 2008 |
| Defect levels through hybrid density functionals: Insights and applications A Alkauskas, P Broqvist, A Pasquarello physica status solidi (b) 248 (4), 775-789, 2011 | 325 | 2011 |
| Native point defects and impurities in hexagonal boron nitride L Weston, D Wickramaratne, M Mackoit, A Alkauskas, CG Van de Walle Physical Review B 97 (21), 214104, 2018 | 321 | 2018 |
| First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre A Alkauskas, BB Buckley, DD Awschalom, CG Van de Walle New Journal of Physics 16, 073026, 2014 | 319 | 2014 |
| Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations A Alkauskas, P Broqvist, F Devynck, A Pasquarello Physical Review Letters 101 (10), 106802, 2008 | 272 | 2008 |
| Advanced Calculations for Defects in Materials: Electronic Structure Methods A Alkauskas, P Deák, J Neugebauer, A Pasquarello, CG Van de Walle John Wiley & Sons, 2011 | 266* | 2011 |
| First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO A Alkauskas, JL Lyons, D Steiauf, CG Van de Walle Physical Review Letters 109 (26), 267401, 2012 | 256 | 2012 |
| Near-deterministic activation of room-temperature quantum emitters in hexagonal boron nitride NV Proscia, Z Shotan, H Jayakumar, P Reddy, C Cohen, M Dollar, ... Optica 5 (9), 1128-1134, 2018 | 253 | 2018 |
| Optical signatures of quantum emitters in suspended hexagonal boron nitride AL Exarhos, DA Hopper, RR Grote, A Alkauskas, LC Bassett ACS Nano 11 (3), 3328-3336, 2017 | 252 | 2017 |
| Defect levels of dangling bonds in silicon and germanium through hybrid functionals P Broqvist, A Alkauskas, A Pasquarello Physical Review B 78 (7), 075203, 2008 | 182 | 2008 |
| Band-edge problem in the theoretical determination of defect energy levels: the O vacancy in ZnO as a benchmark case A Alkauskas, A Pasquarello Physical Review B 84 (12), 125206, 2011 | 178 | 2011 |
| Photoinduced modification of single-photon emitters in hexagonal boron nitride Z Shotan, H Jayakumar, CR Considine, M Mackoit, H Fedder, J Wrachtrup, ... ACS Photonics 3 (12), 2490−2496, 2016 | 177 | 2016 |
| First‐principles theory of acceptors in nitride semiconductors JL Lyons, A Alkauskas, A Janotti, CG Van de Walle physica status solidi (b) 252 (5), 900-908, 2015 | 144 | 2015 |
| Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels P Broqvist, A Alkauskas, A Pasquarello Physical Review B 80 (8), 085114, 2009 | 136 | 2009 |
| First-principles calculations of point defects for quantum technologies CE Dreyer, A Alkauskas, JL Lyons, A Janotti, CG Van de Walle Annual Review of Materials Research 48, 1, 2018 | 132 | 2018 |
| A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion A Carvalho, A Alkauskas, A Pasquarello, AK Tagantsev, N Setter Physical Review B 80 (19), 195205, 2009 | 126 | 2009 |
| Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride M Mackoit-Sinkevičienė, M Maciaszek, CG Van de Walle, A Alkauskas Applied Physics Letters 115 (21), 2019 | 123 | 2019 |
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraVerified email at mrl.ucsb.edu
