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Audrius Alkauskas
Audrius Alkauskas
Center for Physical Sciences and Technology (FTMC), Vilnius, Lithuania
Verified email at ftmc.lt - Homepage
Title
Cited by
Cited by
Year
Tutorial: Defects in semiconductors—Combining experiment and theory
A Alkauskas, MD McCluskey, CG Van de Walle
Journal of Applied Physics 119 (18), 2016
3892016
Measurement and control of single nitrogen-vacancy center spins above 600 K
DM Toyli, DJ Christle, A Alkauskas, BB Buckley, CG Van de Walle, ...
Physical Review X 2, 031001, 2012
3592012
Defect energy levels in density functional calculations: Alignment and band gap problem
A Alkauskas, P Broqvist, A Pasquarello
Physical Review Letters 101 (4), 46405, 2008
3322008
First-principles theory of nonradiative carrier capture via multiphonon emission
A Alkauskas, Q Yan, CG Van de Walle
Physical Review B 90 (7), 075202, 2014
3232014
Defect levels through hybrid density functionals: Insights and applications
A Alkauskas, P Broqvist, A Pasquarello
physica status solidi (b) 248 (4), 775-789, 2011
3162011
First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre
A Alkauskas, BB Buckley, DD Awschalom, CG Van de Walle
New Journal of Physics 16, 073026, 2014
2852014
Native point defects and impurities in hexagonal boron nitride
L Weston, D Wickramaratne, M Mackoit, A Alkauskas, CG Van de Walle
Physical Review B 97 (21), 214104, 2018
2702018
Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations
A Alkauskas, P Broqvist, F Devynck, A Pasquarello
Physical Review Letters 101 (10), 106802, 2008
2682008
Advanced Calculations for Defects in Materials: Electronic Structure Methods
A Alkauskas, P Deák, J Neugebauer, A Pasquarello, CG Van de Walle
John Wiley & Sons, 2011
250*2011
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO
A Alkauskas, JL Lyons, D Steiauf, CG Van de Walle
Physical Review Letters 109 (26), 267401, 2012
2332012
Near-deterministic activation of room-temperature quantum emitters in hexagonal boron nitride
NV Proscia, Z Shotan, H Jayakumar, P Reddy, C Cohen, M Dollar, ...
Optica 5 (9), 1128-1134, 2018
2222018
Optical signatures of quantum emitters in suspended hexagonal boron nitride
AL Exarhos, DA Hopper, RR Grote, A Alkauskas, LC Bassett
ACS Nano 11 (3), 3328-3336, 2017
2212017
Defect levels of dangling bonds in silicon and germanium through hybrid functionals
P Broqvist, A Alkauskas, A Pasquarello
Physical Review B 78 (7), 075203, 2008
1792008
Band-edge problem in the theoretical determination of defect energy levels: the O vacancy in ZnO as a benchmark case
A Alkauskas, A Pasquarello
Physical Review B 84 (12), 125206, 2011
1732011
Photoinduced modification of single-photon emitters in hexagonal boron nitride
Z Shotan, H Jayakumar, CR Considine, M Mackoit, H Fedder, J Wrachtrup, ...
ACS Photonics 3 (12), 2490−2496, 2016
1662016
First‐principles theory of acceptors in nitride semiconductors
JL Lyons, A Alkauskas, A Janotti, CG Van de Walle
physica status solidi (b) 252 (5), 900-908, 2015
1362015
Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels
P Broqvist, A Alkauskas, A Pasquarello
Physical Review B 80 (8), 085114, 2009
1272009
A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
A Carvalho, A Alkauskas, A Pasquarello, AK Tagantsev, N Setter
Physical Review B 80 (19), 195205, 2009
1252009
Observation of individual molecules trapped on a nanostructured insulator
L Nony, E Gnecco, A Baratoff, A Alkauskas, R Bennewitz, O Pfeiffer, ...
Nano Letters 4 (11), 2185-2189, 2004
1252004
Protecting a diamond quantum memory by charge state control
M Pfender, N Aslam, P Simon, D Antonov, G Thiering, S Burk, ...
Nano Letters 17 (10), 5931-5937, 2017
1132017
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