Follow
Jihyun Kim
Jihyun Kim
Verified email at snu.ac.kr
Title
Cited by
Cited by
Year
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
24042018
Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
12152003
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 2018
5612018
Perspective—opportunities and future directions for Ga2O3
MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
4592017
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
4482002
Graphene-based nitrogen dioxide gas sensors
G Ko, HY Kim, J Ahn, YM Park, KY Lee, J Kim
Current Applied Physics 10 (4), 1002-1004, 2010
4082010
High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes
S Oh, CK Kim, J Kim
Acs Photonics 5 (3), 1123-1128, 2017
2472017
Review of radiation damage in GaN-based materials and devices
SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim
Journal of Vacuum Science & Technology A 31 (5), 2013
2422013
Radiation effects in GaN materials and devices
AY Polyakov, SJ Pearton, P Frenzer, F Ren, L Liu, J Kim
Journal of Materials Chemistry C 1 (5), 877-887, 2013
2222013
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
2222002
Radiation damage effects in Ga 2 O 3 materials and devices
J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
2162019
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 2017
2022017
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
1752003
Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
J Kim, S Oh, MA Mastro, J Kim
Physical Chemistry Chemical Physics 18 (23), 15760-15764, 2016
1742016
Solid-State Electron
JF Wu, SJ Chang, YK Su, RW Chuang, YP Hsu, CH Kuo, WC Lai, TC Wen, ...
Solid-State Electron 13, 239, 1970
162*1970
Flexible graphene-based chemical sensors on paper substrates
G Yang, C Lee, J Kim, F Ren, SJ Pearton
Physical Chemistry Chemical Physics 15 (6), 1798-1801, 2013
1612013
enhancement mode metal-oxide semiconductor field-effect transistors
Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
1362004
Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity
S Oh, J Kim, F Ren, SJ Pearton, J Kim
Journal of Materials Chemistry C 4 (39), 9245-9250, 2016
1332016
Defect-engineered graphene chemical sensors with ultrahigh sensitivity
G Lee, G Yang, A Cho, JW Han, J Kim
Physical Chemistry Chemical Physics 18 (21), 14198-14204, 2016
1332016
Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
G Yang, S Jang, F Ren, SJ Pearton, J Kim
ACS applied materials & interfaces 9 (46), 40471-40476, 2017
1292017
The system can't perform the operation now. Try again later.
Articles 1–20