| Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration K Sreenivas, I Reaney, T Maeder, N Setter, C Jagadish, RG Elliman Journal of Applied Physics 75 (1), 232-239, 1994 | 352 | 1994 |
| Unconventional magnetism in all-carbon nanofoam AV Rode, EG Gamaly, AG Christy, JG Fitz Gerald, ST Hyde, RG Elliman, ... Physical Review B—Condensed Matter and Materials Physics 70 (5), 054407, 2004 | 325 | 2004 |
| Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon JS Williams, RG Elliman, WL Brown, TE Seidel Physical review letters 55 (14), 1482, 1985 | 254 | 1985 |
| Role of electronic processes in epitaxial recrystallization of amorphous semiconductors JS Williams, RG Elliman Physical review letters 51 (12), 1069, 1983 | 180 | 1983 |
| Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon J Linnros, RG Elliman, WL Brown Journal of Materials Research 3 (6), 1208-1211, 1988 | 167 | 1988 |
| Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At. RG Elliman, JS Williams, WL Brown, A Leiberich, DM Maher, RV Knoell Nucl. Instrum. Methods Phys. Res. B Beam Interact. Mater. At 19, 20, 0 | 153 | |
| Gettering of copper to hydrogen‐induced cavities in silicon J Wong‐Leung, CE Ascheron, M Petravic, RG Elliman, JS Williams Applied physics letters 66 (10), 1231-1233, 1995 | 148 | 1995 |
| Effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a SiO2 matrix S Cheylan, RG Elliman Applied Physics Letters 78 (9), 1225-1227, 2001 | 137 | 2001 |
| Structural analysis of a carbon foam formed by high pulse-rate laser ablation AV Rode, ST Hyde, EG Gamaly, RG Elliman, DR McKenzie, S Bulcock Applied Physics A 69, S755-S758, 1999 | 132 | 1999 |
| Optical gain in different silicon nanocrystal systems PM Fauchet, J Ruan, H Chen, L Pavesi, L Dal Negro, M Cazzaneli, ... Optical materials 27 (5), 745-749, 2005 | 123 | 2005 |
| Optically absorbing layers on ion beam modified polymers: a study of their evolution and properties D Fink, M Müller, LT Chadderton, PH Cannington, RG Elliman, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1988 | 111 | 1988 |
| Crystalline-to-amorphous transition for Si-ion irradiation of Si (100) PJ Schultz, C Jagadish, MC Ridgway, RG Elliman, JS Williams Physical Review B 44 (16), 9118, 1991 | 105 | 1991 |
| Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in S Cheylan, RG Elliman Applied Physics Letters 78 (13), 1912-1914, 2001 | 104 | 2001 |
| Amorphization and graphitization of single-crystal diamond—A transmission electron microscopy study DP Hickey, KS Jones, RG Elliman Diamond and Related Materials 18 (11), 1353-1359, 2009 | 103 | 2009 |
| Amorphization of silicon by elevated temperature ion irradiation RD Goldberg, JS Williams, RG Elliman Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 103 | 1995 |
| Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes NG Rudawski, BL Darby, BR Yates, KS Jones, RG Elliman, AA Volinsky Applied Physics Letters 100 (8), 2012 | 100 | 2012 |
| Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon JS Williams, RG Elliman Applied Physics Letters 40 (3), 266-268, 1982 | 97 | 1982 |
| Threshold current reduction for the metal–insulator transition in NbO2− x-selector devices: the effect of ReRAM integration SK Nandi, X Liu, DK Venkatachalam, RG Elliman Journal of Physics D: Applied Physics 48 (19), 195105, 2015 | 92 | 2015 |
| Threshold switching and electrical self-oscillation in niobium oxide films X Liu, S Li, SK Nandi, DK Venkatachalam, RG Elliman Journal of Applied Physics 120 (12), 2016 | 89 | 2016 |
| The effect of annealing environment on the luminescence of silicon nanocrystals in silica AR Wilkinson, RG Elliman Journal of Applied Physics 96 (7), 4018-4020, 2004 | 87 | 2004 |
