| Modulation of electronic and mechanical properties of phosphorene through strain M Elahi, K Khaliji, SM Tabatabaei, M Pourfath, R Asgari Physical Review B 91 (11), 115412, 2015 | 196 | 2015 |
| High sensitive and selective flexible HS gas sensors based on Cu nanoparticle decorated SWCNTs M Asad, MH Sheikhi, M Pourfath, M Moradi Sensors and Actuators B: Chemical 210, 1-8, 2015 | 139 | 2015 |
| Highly anisotropic thermal conductivity of arsenene: An ab initio study M Zeraati, SM Vaez Allaei, I Abdolhosseini Sarsari, M Pourfath, ... Physical Review B 93 (8), 085424, 2016 | 134 | 2016 |
| The non-equilibrium Green's function method for nanoscale device simulation M Pourfath Springer, 2014 | 122 | 2014 |
| Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina Journal of Applied Physics 111 (5), 2012 | 115 | 2012 |
| Titanium Carbide MXene as NH3 Sensor: Realistic First-Principles Study P Khakbaz, M Moshayedi, S Hajian, M Soleimani, BB Narakathu, ... The Journal of Physical Chemistry C 123 (49), 29794-29803, 2019 | 108 | 2019 |
| Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX (; ) M Hosseini, M Elahi, M Pourfath, D Esseni IEEE Transactions on Electron Devices 62 (10), 3192-3198, 2015 | 105 | 2015 |
| Geometrical effects on the thermoelectric properties of ballistic graphene antidot lattices H Karamitaheri, M Pourfath, R Faez, H Kosina Journal of Applied Physics 110 (5), 2011 | 86 | 2011 |
| Method for predicting f carbon nanotube FETs LC Castro, DL John, DL Pulfrey, M Pourfath, A Gehring, H Kosina IEEE transactions on nanotechnology 4 (6), 699-704, 2005 | 72 | 2005 |
| A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons A Yazdanpanah, M Pourfath, M Fathipour, H Kosina, S Selberherr Electron Devices, IEEE Transactions on 59 (2), 433-440, 2012 | 69 | 2012 |
| A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor S Mohammad Tabatabaei, M Noei, K Khaliji, M Pourfath, M Fathipour Journal of Applied Physics 113 (16), 2013 | 68 | 2013 |
| Device performance of graphene nanoribbon field-effect transistors in the presence of line-edge roughness AY Goharrizi, M Pourfath, M Fathipour, H Kosina IEEE Transactions on electron devices 59 (12), 3527-3532, 2012 | 68 | 2012 |
| Strain induced mobility modulation in single-layer MoS M Hosseini, M Elahi, M Pourfath, D Esseni Journal of Physics D: Applied Physics 48 (37), 375104, 2015 | 64 | 2015 |
| Performance assessment of nanoscale field-effect diodes N Manavizadeh, F Raissi, EA Soleimani, M Pourfath, S Selberherr IEEE Transactions on Electron Devices 58 (8), 2378-2384, 2011 | 55 | 2011 |
| A multi-purpose Schrödinger-Poisson solver for TCAD applications M Karner, A Gehring, S Holzer, M Pourfath, M Wagner, W Goes, ... Journal of Computational Electronics 6, 179-182, 2007 | 55 | 2007 |
| Ferroelectricity and phase transitions in InSe van der Waals material M Soleimani, M Pourfath Nanoscale 12 (44), 22688-22697, 2020 | 46 | 2020 |
| Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on TiCT MXene as Ammonia Sensor: A First-Principles Study S Hajian, P Khakbaz, M Moshayedi, D Maddipatla, BB Narakathu, ... 2018 IEEE SENSORS, 1-4, 2018 | 45 | 2018 |
| Very large strain gauges based on single layer MoSe and WSe for sensing applications M Hosseini, M Elahi, M Pourfath, D Esseni Applied Physics Letters 107 (25), 253503, 2015 | 45 | 2015 |
| An analytical model for line-edge roughness limited mobility of graphene nanoribbons AY Goharrizi, M Pourfath, M Fathipour, H Kosina, S Selberherr IEEE transactions on electron devices 58 (11), 3725-3735, 2011 | 40 | 2011 |
| A comparative study of tunneling FETs based on graphene and GNR heterostructures N Ghobadi, M Pourfath IEEE Transactions on Electron Devices 61 (1), 186-192, 2013 | 39 | 2013 |
