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Andrei Vescan
Andrei Vescan
Verified email at cst.rwth-aachen.de - Homepage
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Cited by
Year
12 W/mm AlGaN-GaN HFETs on silicon substrates
JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ...
IEEE Electron Device Letters 25 (7), 459-461, 2004
3102004
Current instabilities in GaN-based devices
I Daumiller, D Theron, C Gaquiere, A Vescan, R Dietrich, A Wieszt, ...
IEEE Electron Device Letters 22 (2), 62-64, 2001
2002001
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JW Johnson, RJ Therrien, A Vescan, JD Brown
US Patent 7,071,498, 2006
1802006
AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates
JD Brown, R Borges, E Piner, A Vescan, S Singhal, R Therrien
Solid-State Electronics 46 (10), 1535-1539, 2002
1612002
Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis
R Stoklas, D Gregušová, J Novák, A Vescan, P Kordoš
Applied Physics Letters 93 (12), 2008
1272008
Diamond surface-channel FET structure with 200 V breakdown voltage
P Gluche, A Aleksov, A Vescan, W Ebert, E Kohn
IEEE Electron Device Letters 18 (11), 547-549, 1997
1251997
Heat-spreading diamond films for GaN-based high-power transistor devices
M Seelmann-Eggebert, P Meisen, F Schaudel, P Koidl, A Vescan, H Leier
Diamond and Related Materials 10 (3-7), 744-749, 2001
1092001
Very high temperature operation of diamond Schottky diode
A Vescan, I Daumiller, P Gluche, W Ebert, E Kohn
IEEE Electron Device Letters 18 (11), 556-558, 1997
961997
Diamond junction FETs based on δ-doped channels
A Aleksov, A Vescan, M Kunze, P Gluche, W Ebert, E Kohn, A Bergmeier, ...
Diamond and Related Materials 8 (2-5), 941-945, 1999
951999
Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces
B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ...
Journal of Physics D: Applied Physics 47 (17), 175103, 2014
882014
Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates
N Ketteniss, LR Khoshroo, M Eickelkamp, M Heuken, H Kalisch, ...
Semiconductor science and technology 25 (7), 075013, 2010
882010
Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance
H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan
Applied Physics Express 4 (11), 114102, 2011
862011
High temperature, high voltage operation of diamond Schottky diode
A Vescan, I Daumiller, P Gluche, W Ebert, E Kohn
Diamond and related materials 7 (2-5), 581-584, 1998
861998
P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers
H Hahn, B Reuters, A Pooth, B Holländer, M Heuken, H Kalisch, A Vescan
IEEE transactions on electron devices 60 (10), 3005-3011, 2013
802013
The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ...
Semiconductor Science and Technology 29 (11), 115012, 2014
792014
Material, process, and device development of GaN-based HFETs on silicon substrates
JW Johnson, J Gao, JD BROWN, A HANSON, S SINGHAL, R BORGES
Proceedings-Electrochemical Society, 405-419, 2004
732004
Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2
DS Schneider, A Grundmann, A Bablich, V Passi, S Kataria, H Kalisch, ...
Acs Photonics 7 (6), 1388-1395, 2020
722020
Diamond diodes and transistors
A Aleksov, A Denisenko, M Kunze, A Vescan, A Bergmaier, G Dollinger, ...
Semiconductor science and technology 18 (3), S59, 2003
722003
First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors
H Hahn, B Reuters, S Kotzea, G Lükens, S Geipel, H Kalisch, A Vescan
72nd Device Research Conference, 259-260, 2014
662014
High-temperature, high-voltage operation of pulse-doped diamond MESFET
A Vescan, P Gluche, W Ebert, E Kohn
IEEE Electron Device Letters 18 (5), 222-224, 1997
651997
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