Transition metal carbides (MXenes) for efficient NiO-based inverted perovskite solar cells D Saranin, S Pescetelli, A Pazniak, D Rossi, A Liedl, A Yakusheva, ...
Nano Energy 82, 105771, 2021
100 2021 Epitaxial growth of single-orientation high-quality MoS2 monolayers H Bana, E Travaglia, L Bignardi, P Lacovig, CE Sanders, M Dendzik, ...
2D Materials 5 (3), 035012, 2018
74 2018 Novel single-layer vanadium sulphide phases F Arnold, RM Stan, SK Mahatha, HE Lund, D Curcio, M Dendzik, H Bana, ...
2D Materials 5 (4), 045009, 2018
49 2018 Performance Benchmarking and Effective Channel Length for Nanoscale InAs, , and sSi n-MOSFETs D Lizzit, D Esseni, P Palestri, P Osgnach, L Selmi
IEEE transactions on Electron Devices 61 (6), 2027-2034, 2014
44 2014 80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer on Au(111) H Beyer, G Rohde, AG Čabo, A Stange, T Jacobsen, L Bignardi, D Lizzit, ...
Physical review letters 123 (23), 236802, 2019
42 2019 Ion Implantation Induced Structural Modifications and Functionalization of Ti3C2Tx MXenes H Pazniak, T Bilyk, P Chartier, S Hurand, M Marteau, J Pacaud, A Liedl, ...
ECS Meeting Abstracts, 652, 2021
41 * 2021 Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3 C2 Tx MXenes H Pazniak, M Benchakar, T Bilyk, A Liedl, Y Busby, C Noël, P Chartier, ...
ACS nano 15 (3), 4245-4255, 2021
41 2021 Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes M Rau, E Caruso, D Lizzit, P Palestri, D Esseni, A Schenk, L Selmi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 30.6. 1-30.6. 4, 2016
36 2016 Spin Structure of Valleys in Single-Layer on Au(111) P Eickholt, C Sanders, M Dendzik, L Bignardi, D Lizzit, S Lizzit, A Bruix, ...
Physical review letters 121 (13), 136402, 2018
34 2018 A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors D Lizzit, D Esseni, P Palestri, L Selmi
Journal of Applied Physics 116 (22), 223702, 2014
31 2014 Analysis of the performance of n-type FinFETs with strained SiGe channel D Lizzit, P Palestri, D Esseni, A Revelant, L Selmi
IEEE transactions on electron devices 60 (6), 1884-1891, 2013
30 2013 Photoemission investigation of oxygen intercalated epitaxial graphene on Ru (0001) S Ulstrup, P Lacovig, F Orlando, D Lizzit, L Bignardi, M Dalmiglio, ...
Surface Science 678, 57-64, 2018
26 2018 Growth and structure of singly oriented single-layer tungsten disulfide on Au (111) L Bignardi, D Lizzit, H Bana, E Travaglia, P Lacovig, CE Sanders, ...
Physical Review Materials 3 (1), 014003, 2019
25 2019 Ultrafast electronic linewidth broadening in the C core level of graphene D Curcio, S Pakdel, K Volckaert, JA Miwa, S Ulstrup, N Lanatà, M Bianchi, ...
Physical Review B 104 (16), L161104, 2021
24 2021 An improved surface roughness scattering model for bulk, thin-body, and quantum-well MOSFETs O Badami, E Caruso, D Lizzit, P Osgnach, D Esseni, P Palestri, L Selmi
IEEE Transactions on Electron Devices 63 (6), 2306-2312, 2016
23 2016 Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2 ) Ultrathin Films by Postgrowth Annealing M Bonilla, S Kolekar, J Li, Y Xin, PM Coelho, K Lasek, K Zberecki, D Lizzit, ...
Advanced Materials Interfaces 7 (15), 2000497, 2020
21 2020 The impact of interface states on the mobility and drive current of In0. 53Ga0. 47As semiconductor n-MOSFETs P Osgnach, E Caruso, D Lizzit, P Palestri, D Esseni, L Selmi
Solid-State Electronics 108, 90-96, 2015
18 2015 Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs D Lizzit, D Esseni, P Palestri, L Selmi
2013 IEEE International Electron Devices Meeting, 5.2. 1-5.2. 4, 2013
18 2013 Dual-route hydrogenation of the graphene/Ni interface D Lizzit, MI Trioni, L Bignardi, P Lacovig, S Lizzit, R Martinazzo, ...
ACS nano 13 (2), 1828-1838, 2019
17 2019 Momentum-resolved linear dichroism in bilayer K Volckaert, H Rostami, D Biswas, I Marković, F Andreatta, CE Sanders, ...
Physical Review B 100 (24), 241406, 2019
15 2019