| Size effects in mechanical deformation and fracture of cantilevered silicon nanowires MJ Gordon, T Baron, F Dhalluin, P Gentile, P Ferret Nano letters 9 (2), 525-529, 2009 | 226 | 2009 |
| Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ... IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001 | 178 | 2001 |
| Laser diodes based on beryllium-chalcogenides A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ... Applied physics letters 70 (3), 280-282, 1997 | 170 | 1997 |
| Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications M Kanoun, A Souifi, T Baron, F Mazen Applied Physics Letters 84 (25), 5079-5081, 2004 | 157 | 2004 |
| Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales C Sire, S Blonkowski, MJ Gordon, T Baron Applied Physics Letters 91 (24), 2007 | 149 | 2007 |
| Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ... Apl Materials 4 (4), 2016 | 146 | 2016 |
| Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices T Baron, F Martin, P Mur, C Wyon, M Dupuy Journal of crystal growth 209 (4), 1004-1008, 2000 | 144 | 2000 |
| Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates S Chen, M Liao, M Tang, J Wu, M Martin, T Baron, A Seeds, H Liu Optics express 25 (5), 4632-4639, 2017 | 143 | 2017 |
| Control of gold surface diffusion on Si nanowires MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ... Nano letters 8 (5), 1544-1550, 2008 | 138 | 2008 |
| Chemical vapor deposition of Ge nanocrystals on T Baron, B Pelissier, L Perniola, F Mazen, JM Hartmann, G Rolland Applied Physics Letters 83 (7), 1444-1446, 2003 | 130 | 2003 |
| Single-electron charging effect in individual Si nanocrystals T Baron, P Gentile, N Magnea, P Mur Applied physics letters 79 (8), 1175-1177, 2001 | 121 | 2001 |
| Novel beryllium containing II–VI compounds: basic properties and potential applications A Waag, T Litz, F Fischer, HJ Lugauer, T Baron, K Schüll, U Zehnder, ... Journal of crystal growth 184, 1-10, 1998 | 115 | 1998 |
| Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy P Tsipas, D Tsoutsou, S Fragkos, R Sant, C Alvarez, H Okuno, G Renaud, ... ACS nano 12 (2), 1696-1703, 2018 | 114 | 2018 |
| How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ... IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003 | 114 | 2003 |
| Silicon nanocrystal memories S Lombardo, B De Salvo, C Gerardi, T Baron Microelectronic Engineering 72 (1-4), 388-394, 2004 | 112 | 2004 |
| Toward a reliable chipless RFID humidity sensor tag based on silicon nanowires A Vena, E Perret, D Kaddour, T Baron IEEE Transactions on Microwave Theory and Techniques 64 (9), 2977-2985, 2016 | 107 | 2016 |
| Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication S Decossas, F Mazen, T Baron, G Brémond, A Souifi Nanotechnology 14 (12), 1272, 2003 | 107 | 2003 |
| Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ... IEEE Transactions on Device and Materials reliability 4 (3), 377-389, 2004 | 104 | 2004 |
| Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy T Baron, K Saminadayar, N Magnea Journal of applied physics 83 (3), 1354-1370, 1998 | 101 | 1998 |
| Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001) T Zhou, M Tang, G Xiang, B Xiang, S Hark, M Martin, T Baron, S Pan, ... Nature communications 11 (1), 977, 2020 | 99 | 2020 |
Pascal GentileceaVerified email at cea.fr
