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Farid Medjdoub
Farid Medjdoub
IEMN - CNRS
Verified email at iemn.fr
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Cited by
Year
GaN-based power devices: Physics, reliability, and perspectives
M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 2021
3132021
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?
F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ...
2006 International Electron Devices Meeting, 1-4, 2006
2492006
Barrier-layer scaling of InAlN/GaN HEMTs
F Medjdoub, M Alomari, JF Carlin, M Gonschorek, E Feltin, MA Py, ...
IEEE Electron device letters 29 (5), 422-425, 2008
1572008
Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate
F Medjdoub, J Derluyn, K Cheng, M Leys, S Degroote, D Marcon, D Visalli, ...
IEEE electron device letters 31 (2), 111-113, 2010
1412010
Status of the emerging InAlN/GaN power HEMT technology
F Medjdoub, JF Carlin, C Gaquière, N Grandjean, E Kohn
The Open Electrical & Electronic Engineering Journal 2 (1), 2008
1132008
A comprehensive reliability investigation of the voltage-, temperature-and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
D Marcon, T Kauerauf, F Medjdoub, J Das, M Van Hove, P Srivastava, ...
2010 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2010
1062010
First demonstration of high-power GaN-on-silicon transistors at 40 GHz
F Medjdoub, M Zegaoui, B Grimbert, D Ducatteau, N Rolland, PA Rolland
IEEE electron device letters 33 (8), 1168-1170, 2012
1032012
Gallium nitride (GaN): physics, devices, and technology
F Medjdoub
CRC Press, 2017
992017
High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate
F Medjdoub, M Zegaoui, D Ducatteau, N Rolland, PA Rolland
IEEE Electron Device Letters 32 (7), 874-876, 2011
942011
Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors
F Medjdoub, M Zegaoui, B Grimbert, N Rolland, PA Rolland
Applied Physics Express 4 (12), 124101, 2011
892011
InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M Alomari, F Medjdoub, JF Carlin, E Feltin, N Grandjean, A Chuvilin, ...
IEEE electron device letters 30 (11), 1131-1133, 2009
862009
High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation
K Harrouche, R Kabouche, E Okada, F Medjdoub
IEEE Journal of the Electron Devices Society 7, 1145-1150, 2019
852019
Characteristics of Al2O3/AlInN/GaN MOSHEMT
F Medjdoub, N Sarazin, M Tordjman, M Magis, MA di Forte-Poisson, ...
Electronics letters 43 (12), 691-692, 2007
832007
1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal
N Herbecq, I Roch-Jeune, N Rolland, D Visalli, J Derluyn, S Degroote, ...
Applied Physics Express 7 (3), 034103, 2014
822014
Enhancement mode semiconductor device
J Derluyn, F Medjdoub, M Germain
US Patent 8,309,987, 2012
762012
Small-signal characteristics of AlInN/GaN HEMTs
F Medjdoub, JF Carlin, M Gonschorek, MA Py, N Grandjean, ...
Electronics Letters 42 (13), 779-780, 2006
622006
Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
J Derluyn, M Van Hove, D Visalli, A Lorenz, D Marcon, P Srivastava, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
532009
Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices
F Medjdoub, B Grimbert, D Ducatteau, N Rolland
Applied Physics Express 6 (4), 044001, 2013
522013
Above 2000 V breakdown voltage at 600 K GaN‐on‐silicon high electron mobility transistors
N Herbecq, I Roch‐Jeune, A Linge, M Zegaoui, PO Jeannin, N Rouger, ...
physica status solidi (a) 213 (4), 873-877, 2016
492016
Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate
F Medjdoub, N Waldhoff, M Zegaoui, B Grimbert, N Rolland, PA Rolland
IEEE electron device letters 32 (9), 1230-1232, 2011
462011
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