A four-terminal, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation N El-Hinnawy, P Borodulin, B Wagner, MR King, JS Mason, EB Jones, ... IEEE Electron Device Letters 34 (10), 1313-1315, 2013 | 138 | 2013 |
A 7.3 THz cut-off frequency, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation N El-Hinnawy, P Borodulin, BP Wagner, MR King, JS Mason, EB Jones, ... 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013 | 106 | 2013 |
12.5 THz Fco GeTe inline phase-change switch technology for reconfigurable RF and switching applications N El-Hinnawy, P Borodulin, EB Jones, BP Wagner, MR King, JS Mason, ... 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2014 | 79 | 2014 |
Phase change material switch and method of making the same P Borodulin, NAM El-Hinnawy, RM Young, RS Howell, JR Mason Jr, ... US Patent 9,257,647, 2016 | 77 | 2016 |
Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials N El-Hinnawy, P Borodulin, BP Wagner, MR King, EB Jones, RS Howell, ... Applied Physics Letters 105 (1), 2014 | 77 | 2014 |
PCM switch and method of making the same P Borodulin, NAM El-Hinnawy, RM Young US Patent 10,700,270, 2020 | 46 | 2020 |
Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switches DJ Howard, N El-Hinnawy, GP Slovin, JE Rose US Patent 10,529,922, 2020 | 38 | 2020 |
Substrate agnostic monolithic integration of the inline phase-change switch technology N El-Hinnawy, P Borodulin, A Ezis, C Furrow, C Padilla, M King, E Jones, ... 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 37 | 2016 |
Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch RM Young, N El-Hinnawy, P Borodulin, BP Wagner, MR King, EB Jones, ... Journal of Applied Physics 116 (5), 2014 | 35 | 2014 |
Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha, ... IEEE electron device letters 34 (3), 384-386, 2013 | 35 | 2013 |
Development of cap-free sputtered GeTe films for inline phase change switch based RF circuits MR King, BP Wagner, EB Jones, N El-Hinnawy, P Borodulin, ... Journal of Vacuum Science & Technology B 32 (4), 2014 | 33 | 2014 |
Recent advances in fabrication and characterization of GeTe-based phase-change RF switches and MMICs P Borodulin, N El-Hinnawy, CR Padilla, A Ezis, MR King, DR Johnson, ... 2017 IEEE MTT-S International Microwave Symposium (IMS), 285-288, 2017 | 31 | 2017 |
Improvements in GeTe-based inline phase-change switch technology for RF switching applications N El-Hinnawy, P Borodulin, EB Jones, BP Wagner, MR King, JS Mason, ... CS MANTECH, 401-403, 2014 | 27 | 2014 |
Origin and optimization of RF power handling limitations in inline phase-change switches N El-Hinnawy, P Borodulin, MR King, CR Padilla, A Ezis, DT Nichols, ... IEEE Transactions on Electron Devices 64 (9), 3934-3942, 2017 | 26 | 2017 |
Degradation and full recovery in high-voltage implanted-gate SiC JFETs subjected to bipolar current stress V Veliadis, H Hearne, EJ Stewart, M Snook, W Chang, JD Caldwell, ... IEEE electron device letters 33 (7), 952-954, 2012 | 26 | 2012 |
A 25 THz (6.3 fs ) Phase-Change Material RF Switch Fabricated in a High Volume Manufacturing Environment with Demonstrated Cycling > 1 … N El-Hinnawy, G Slovin, J Rose, D Howard 2020 IEEE/MTT-S International Microwave Symposium (IMS), 45-48, 2020 | 24 | 2020 |
Hard-switch stressing of vertical-channel implanted-gate SiC JFETs K Lawson, G Alvarez, SB Bayne, V Veliadis, HC Ha, D Urciuoli, ... IEEE electron device letters 33 (1), 86-88, 2011 | 24 | 2011 |
High reliability RF switch based on phase-change material GP Slovin, DJ Howard, JE Rose, MJ Debar, N El-Hinnawy US Patent 10,461,253, 2019 | 23 | 2019 |
Examination of the temperature dependent electronic behavior of GeTe for switching applications JG Champlain, LB Ruppalt, AC Guyette, N El-Hinnawy, P Borodulin, ... Journal of Applied Physics 119 (24), 2016 | 23 | 2016 |
Morphological analysis of GeTe in inline phase change switches MR King, N El-Hinnawy, M Salmon, J Gu, BP Wagner, EB Jones, ... Journal of Applied Physics 118 (9), 2015 | 22 | 2015 |